• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• Journal of the Korea institute for structural maintenance and inspection
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• v.23 no.2
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• pp.130-134
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• 2019

In this paper, a laser-based non-contact load cell is newly developed for measuring forces in prestressed concrete tendons. First, alumina particles have been sprayed onto an empty load cell which has no strain gauges on it, and the layer has been used as a passive stress sensor. Then, the spectral shifts in fluorescence spectroscopy have been measured using a laser-based spectroscopic system under various force levels, and it has been found that the relation of applied force and spectral shift is linear in a lab-scale test. To validate the field applicability of the customized load cell, a full-scale prestressed concrete specimen has been constructed in a yard. During the field test, it was, however, found that the coating surface has irregular stress distribution. Therefore, the location of a probe has to be fixed onto the customized load cell for using the coating layer as a passive stress sensor. So, a prototype customized load cell has been manufactured, which consists of a probe mount on its casing. Then, by performing lab-scale uniaxial compression tests with the prototype load cell, a linear relation between compression stress and spectrum shift at a specific point where laser light had been illuminated has been detected. Thus, it has a high possibility to use the prototype load cell as a force sensor of prestressed concrete tendons.

• Corrosion Science and Technology
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• v.18 no.2
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• pp.55-60
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• 2019

Corrosion failure in the convection part of peak load boiler (PLB) of the district heating system led to water leakage. Herein, Internal Rotary Inspection System (IRIS) inspection was employed to examine wall thinning and the cause of leakage in the flue tube. The corrosive products of the turbulator and tube were investigated using scanning electron microscope combined with energy dispersive spectroscopy, X-ray diffraction, and inductively coupled plasma (ICP). Majority of the serious corrosion damage was observed near the turbulator located in the upper flue tube. ICP analysis of the boiler water revealed oxide formation of sodium chloride in the lower end part of the flue tube. A cross-sectional view of the turbulator revealed the presence of double-layers of the oxide film, indicating environmental change during operation associated with water leakage. The outer surface of the turbulator consisted of the acid oxides such as $NO_x$ and $SO_x$ along with sodium and chloride ions. Dew-point corrosion is hypothesized as the main cause for the formation of acid oxides in the region of contact of the flue tube and the turbulator.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.119-119
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• 2011

This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.389-393
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• 2004

The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 50 nm-thick and, the same time, the silicides also need to have low contact resistance without agglomeration at high processing temperatures. We fabricated Si(100)/15 nm-Ni/15 nm-Co samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from $700^{\circ}C$ to $1100^{\circ}C$ using rapid thermal annealing. We investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. Sheet resistance of the annealed sample stack was measured with a four point probe. The sheet resistance measurements for our proposed Co/Ni composite silicide was below 8 $\Omega$/sq. even after annealing $1100^{\circ}C$, while conventional nickel-monosilicide showed abrupt phase transformation at $700^{\circ}C$. Microstructure and auger depth profiling showed that the silicides in our sample consisted of intermixed phases of $CoNiSi_{x}$ and NiSi. It was noticed that NiSi grew rapidly at the silicon interface with increasing annealing temperature without transforming into $NiSi_2$. Our results imply that Co/Ni composite silicide should have excellent high temperature stability even in post-silicidation processes.

• The Journal of Advanced Prosthodontics
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• v.16 no.3
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• pp.189-199
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• 2024

PURPOSE. This study was conducted to evaluate the effects of plasma treatment of sandblasted and acid-etched (SLA) titanium implants on surface cleansing and osseointegration in a beagle model. MATERIALS AND METHODS. For morphological analysis and XPS analysis, scanning electron microscope and x-ray photoelectron spectroscopy were used to analyze the surface topography and chemical compositions of implant before and after plasma treatment. For this animal experiment, twelve SLA titanium implants were divided into two groups: a control group (untreated implants) and a plasma group (implants treated with plasma). Each group was randomly located in the mandibular bone of the beagle dog (n = 6). After 8 weeks, the beagle dogs were sacrificed, and volumetric analysis and histometric analysis were performed within the region of interest. RESULTS. In morphological analysis, plasma treatment did not alter the implant surface topography or cause any physical damage. In XPS analysis, the atomic percentage of carbon at the inspection point before the plasma treatment was 34.09%. After the plasma treatment, it was reduced to 18.74%, indicating a 45% reduction in carbon. In volumetric analysis and histometric analysis, the plasma group exhibited relatively higher mean values for new bone volume (NBV), bone to implant contact (BIC), and inter-thread bone density (ITBD) compared to the control group. However, there was no significant difference between the two groups (P > .05). CONCLUSION. Within the limits of this study, plasma treatment effectively eliminated hydrocarbons without changing the implant surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.41-47
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• 2024

In this study, the resistance characteristics of semi-insulating SiC single crystals grown using the PVT method were investigated, considering the purity level of SiC source powders used in PVT growth and the cooling procedure after crystal growth. Two β-SiC powders with different purities were employed, and the cooling rate after growth was adjusted to achieve various resistance values. 4-inch HPSI-SiC ingots were grown using the PVT method, utilizing SiC powders with low nitrogen concentration and relatively high nitrogen concentration. These ingots were then subjected to different cooling procedures to modify the cooling rate. Transmission/absorption spectra and crystal quality of the grown crystals were analyzed through UV/VIs/NIR spectroscopy and X-ray rocking curve analysis, respectively. Additionally, electrical properties were investigated through non-contact resistivity analysis to identify the dominant factors influencing resistivity properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.400-401
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• 2012

그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 그러나 에너지 밴드 갭이 없기 때문에 소자의 전기적 특성이 제한되는 단점이 있다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization) 등의 방법으로 그래핀을 도핑 후 에너지 밴드 갭을 형성시키는 연구 결과들이 보고된 바 있다. 그러나 이러한 방법들은 표면이 균일하지 않고, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막(Self-assembled monolayers; SAMs)을 이용하여 이산화규소(Silicon oxide; SiO2) 기판을 기능화한 후 그 위에 그래핀을 전사하면 그래핀의 일함수를 쉽게 조절하여 소자의 전기적 특성을 최적화할 수 있다. SAMs는 그래핀과 SiO2 사이에 부착된 매우 얇고 안정적인 층으로 사용된 물질의 특성에 따라 운반자 농도나 도핑 유형, 디락 점(Dirac point)으로부터의 페르미 에너지 준위(Fermi energy level)를 조절할 수 있다[1-3]. 본 연구에서는 SAMs한 기판을 이용하여 그래핀의 도핑 효과를 확인하였다. CVD를 이용하여 균일한 그래핀을 합성하였고, 기판을 3-Aminopropyltriethoxysilane (APTES)와 Borane-Ammonia(Borazane)을 이용하여 각각 아민 기(Amine group; -NH2)와 보론 나이트라이드(Boron Nitride; BN)로 기능화한 후, 그 위에 합성한 그래핀을 전사하였다. 기판 위에 NH2와 BN이 SAMs 형태로 존재하는 것을 접촉각 측정(Contact angle measurement)을 통해 확인하였고, 그 결과 NH2와 BN에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)을 이용하여 확인하였다. 본 연구 결과는 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.25-30
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• 2015

SAC-coated Cu specimens were fabricated by novel pad finish process using a phenomenon that metal nanoparticles less than 20 nm in diameter melted at a temperature lower than the melting point of bulk metal, and their wettabilities were evaluated. The thickness of SAC305 layer coated at low temperature of $160^{\circ}C$ using SAC305 ink was extremely thin as the level of several nanometers. It was analyzed by Auger electron spectroscopy that $Cu_6Sn_5$ intermetallic layer with a thickness of 10~100 nm and $Cu_3Sn$ intermetallic layer with a thickness of 50~150 nm were sequentially formed under the SAC305 coating layer. The thickness of formed intermetallic layers was thicker in electroplated Cu than rolled Cu, which attributed to improved surface roughness in the electroplated Cu. The improved surface roughness induces the contact, melting, and reaction of a larger number of SAC305 nanoparticles per the unit area of Cu specimen. In the wetting angle test using SAC305 solder balls, the Cu coated with SAC305 through the low temperature process presented evidently low wetting angles than those in non-coated Cu, indicating that only a few nanometer-thick SAC305 coating layer on Cu could also cause the enhancement of wettability.