Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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The effect of PVT process parameters on the resistance of HPSI-SiC crystal

PVT 공법의 공정 변수가 고순도 반절연 SiC 단결정의 저항에 미치는 영향

  • Jun-Hyuck Na (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Min-Gyu Kang (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Gi-Uk Lee (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Ye-Jin Choi (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Mi-Seon Park (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Kwang-Hee Jung (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Gyu-Do Lee (KC Industrial) ;
  • Woo-Yeon Kim (KC Industrial) ;
  • Won-Jae Lee (Department of Advanced Materials Engineering, Dong-Eui University)
  • 나준혁 (동의대학교 신소재공학과) ;
  • 강민규 (동의대학교 신소재공학과) ;
  • 이기욱 (동의대학교 신소재공학과) ;
  • 최예진 (동의대학교 신소재공학과) ;
  • 박미선 (동의대학교 신소재공학과) ;
  • 정광희 (동의대학교 신소재공학과) ;
  • 이규도 (KC 인더스트리얼) ;
  • 김우연 (KC 인더스트리얼) ;
  • 이원재 (동의대학교 신소재공학과)
  • Received : 2024.02.06
  • Accepted : 2024.03.14
  • Published : 2024.04.30
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Abstract

In this study, the resistance characteristics of semi-insulating SiC single crystals grown using the PVT method were investigated, considering the purity level of SiC source powders used in PVT growth and the cooling procedure after crystal growth. Two β-SiC powders with different purities were employed, and the cooling rate after growth was adjusted to achieve various resistance values. 4-inch HPSI-SiC ingots were grown using the PVT method, utilizing SiC powders with low nitrogen concentration and relatively high nitrogen concentration. These ingots were then subjected to different cooling procedures to modify the cooling rate. Transmission/absorption spectra and crystal quality of the grown crystals were analyzed through UV/VIs/NIR spectroscopy and X-ray rocking curve analysis, respectively. Additionally, electrical properties were investigated through non-contact resistivity analysis to identify the dominant factors influencing resistivity properties.

본 연구에서는 SiC(Silicon Carbide) 분말의 순도와 결정 성장 후 냉각 속도를 제어하여 PVT(Physical Vapor Transport) 방법으로 성장한 4인치 HPSI(High-Purity Semi-Insulating)-SiC 단결정의 저항 특성을 조사하였다. 순도가 다른 2개의 β-SiC 분말을 사용하였고, 성장 후 냉각 속도를 조절하여 다양한 저항값을 얻었다. 성장된 결정의 투과/흡수 스펙트럼 및 결정 품질은 각각 UV/VIs/NIR 분석과 XRD Rocking curve 분석을 이용하였으며, 비접촉 비저항 분석을 통해 전기적 특성을 조사하여 비저항 특성에 우세한 영향을 미치는 주요 요인을 확인하였다.

Keywords

Acknowledgement

이 연구는 정부(산업통상자원부)의 재원으로 한국산업기술평가관리원의 지원(RS-2022-00154720)과 교육부의 재원으로 한국기초과학지원연구원 국가연구시설장비진흥센터의 지원(No. 2019R1A6C1010045), 정부(산업통상자원부)의 재원으로 한국산업기술진흥원의 지원(P0012451, 2023년 산업혁신인재성장지원사업)을 받아 수행된 연구입니다.

References

  1. https://www.powerwaywafer.com/ko/gan-mosfet-structure.html.
  2. S. Wang, A. Powell, J. Redwing, E. Piner and A.W. Saxler, "Generation and properties of semi-insulating SiC substrates", Mater. Sci. Forum. 338 (2000), 17.
  3. M. Bickermann, D. Hofmann, T.L. Straubinger, R. Weingartner and A. Winnacker, "Preparation of semi-insulating silicon carbide by vanadium doping during PVT bulk crystal growth", Mater. Sci. Forum. 433 (2003) 51.
  4. Y.M. Wang, X.R. Hou, W. Xu and M. Tian, "Effects of reaction temperature on the synthesis of high purity silicon carbide powder", Mater. Res. Innov. 19 (2015) S51338.
  5. N.T. Son, P. Carlsson, A. Gallstrom, B. Magnusson and E. Janzn, "Prominent defects in semi-insulating SiC substrates", Appl. Phys. Lett. 91 (2007) 202111.
  6. J.J. Ronald, M.D. Philip, H.H. McDonald, M.S. Georg and U.S. Patent, WO/2004/001836, filed June 10, 2003, and issued March 16 (2011).
  7. N.W. Jepps and T.F. Page, "Polytypic transformations in silicon carbide", Prog. Cryst. Growth. CH. 7 (1983) 259.
  8. S. Nishino, Y. Kojima and J. Saraie, "Growth and morphology of 6H-SiC prepared by the sublimation method", Springer Proc. Phys. 56 (1992) 15.
  9. H. Hiroshi, S.I. Nakashima and T. Uemura, "Raman scattering from anisotropic LO-phonon-plasmon-coupled mode in n-type 4H- and 6H-SiC", J. Appl. Phys. 78 (1995) 1996.
  10. S. Zollner, J.G. Chen, E. Duda, t. Wetteroth, S.R. Wilson and J.N. Hilfiker, "Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si", J Appl. Phys. 85 (1999) 8353.
  11. P.J. Wellmann, R. Weingartner, "Determination of doping levels and their distribution in SiC by optical techniques", Mater. Sci. Eng. 102 (2003) 262.
  12. G.L. DesAutels, C. Brewer, M. Walker, S. Juhl, M. Finet, S. Ristich, M. Whitaker and P. Powers, "Femtosecond laser damage threshold and nonlinear characterization in bulk transparent SiC materials", J. Opt. Soc. Am. B. 25 (2008) 60.