• Title/Summary/Keyword: plasma technology

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Growth and characterization of BON thin films prepared by low frequency RF plasma enhanced MOCVD method

  • Chen, G.C.;Lim, D.-C.;Lee, S.-B.;Hong, B.Y.;Kim, Y.J.;Boo, J.-H.
    • Journal of the Korean institute of surface engineering
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    • v.34 no.5
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    • pp.510-515
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    • 2001

  • It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

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Deposition of Plasma Polymerized Films on Silicon Substrates Using Plasma Assisted CVD Method For Low Dielectric Application

  • Kim, M.C.;S.H. Cho;J.H. Boo;Lee, S.B.;J.G. Han;B.Y. Hong;S.H. Yang
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.06a
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    • pp.72-72
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    • 2001

  • Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

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Full Color Large Area Flexible Plasma Displays

  • Wedding, Carol;Strbik, Oliver;Peters, Edwin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1237-1239
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    • 2008

  • Imaging Systems Technology is conducting research and development in large area flexible plasma displays. These displays will be used for low cost dynamic signage and billboards. In this paper, IST will report its current progress in achieving very bright full color displays.

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