• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.116-121
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• 2006

Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.21-26
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• 2021

Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.352-357
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• 2007

Since a pattern defects "repair" system using a diode pumped solid state laser for Flat Panel Display (FPD) was suggested, a lot of laser systems have been explored and developed for mass-production microfabrication process. A maskless lithography system using 405 nm violet laser and Digital Micromirror Device (DMD) has been developed for PDP and Liquid Crystal Display (LCD) Thin Film Transistor (TFT) photolithography process. In addition, a "Laser Direct Patterning" system for Indium Tin Oxide (ITO) for Plasma Display Panel(PDP) has been evaluated one of the best successful examples for laser application system which is applied for mass-production lines. The "heat" and "solvent" free laser microfabrications process will be widely used because the next-generation flat panel displays, Flexible Display and Organic Light Emitting Diode (OLED) should use plastic substrates and organic materials which are very difficult to process using traditional fabrication methods.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.989-993
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• 2002

Barrier ribs in the color plasma display panel(PDP) function to maintain the discharge space between to glass plates as well as to prevent optical crosstalk. Patterning of barrier ribs is one of unique processes for making PDP. In this work photosensitive barrier rib pastes were prepared by incorporating binder polymer, solvent, functional monomers photoinitiator, mid barrier rib powder. Study on the function of materials for the barrier rib paste were undertaken. After optimization of paste formulation, both photolithographic and transparent soft molding method resulted in fine pattern of barrier ribs with high aspect ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.103-104
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• 2007

Nanometer-scaled polymer beads, such as polystyrene beads, were used as nanometer fabrication materials due to their some advantages such as self-assembled monolayer, nanometer scaled size and excellent compatibility with silicon based devices. Thus, the investigation on these properties of polymer beads was required. It is difficult to control the array of polystyrene beads on silicon substrate. In this study, we investigated the condition of selective array of polystyrene beads on nanometer-scaled hydrophilic surface which was obtained by APS coating. A tilting method was used to array the polystyrene beads selectively on the substrate. The polystyrene beads could be arrayed selectively by this method. From these results, we verified that there are possibilities to fabricate unique tools for the nanometer-scaled electrical devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.99-102
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• 1999

A mixture which was made from organic gel, glass powder and ceramic powder was masklessly etched for fabrication of barrier rib of PDP(Plasma Display Panel) by focused Ar$^{+}$ laser( λ =514 nm) and Nd:YAG(λ =532, 266 nm) laser irradiation at the atmosphere. The depth of the etched grooves increases with increasing a laser fluence and decreasing a scan speed. Using second harmonic of Nd:YAG laser, the threshold laser fluence was 6.5 mJ/$\textrm{cm}^2$ for the sample of PDP barrier rib softened at 12$0^{\circ}C$. The thickness of 130 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5 J/$\textrm{cm}^2$....

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.460-460
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• 2012

반도체 Device가 Shrink 함에 따라 Pattern Size가 작아지게 되고, 이로 인해 Photo Resist 물질 자체만으로는 원하는 Patterning 물질들을 Plasma Etching 하기가 어려워지고 있다. 이로 인해 Photoresist를 대체할 Hard Mask 개념이 도입되었으며, 이 Hardmask Layer 중 Amorphous Carbon Layer 가 가장 널리 사용되고 지고 있다. 이 Amorphous Carbon 계열의 Hardmask를 Etching 하기 위해서 기본적으로 O2 Plasma가 사용되는데, 이 O2 Plasma 내의 Oxygen Species들이 가지는 등 방성 Diffusion 특성으로 인해, 원하고자 하는 미세 Pattern의 Vertical Profile을 얻는데 많은 어려움이 있어왔다. 이를 Control 하기 인해 O2 Plasma Parameter들의 변화 및 Source/Bias Power 등의 변수가 연구되어 왔으며, 이와 다른 접근으로, N2 및 CO, CO2, SO2 등의 여러 Additive Gas 들의 첨가를 통해 미세 Pattern의 Profile을 개선하고, Plasma Etching 특성을 개선하는 연구가 같이 진행되어져 왔다. 본 논문에서 VLSI Device의 Masking Layer로 사용되는, Carbon 계 유기 층의 Plasma 식각 특성에 대한 연구를 진행하였다. Plasma Etchant로 사용되는 O2 Plasma에 새로운 첨가제 가스인 카르보닐 황화물 (COS) Gas를 추가하였을 시 나타나는 Plasma 내의 변화를 Plasma Parameter 및 IR 및 XPS, OES 분석을 통하여 규명하고, 이로 인한 Etch Rate 및 Plasma Potential에 대해 비교 분석하였다. COS Gas를 정량적으로 추가할 시, Plasma의 변화 및 이로 인해 얻어지는 Pattern에서의 Etchant Species들의 변화를 통해 Profile의 변화를 Mechanism 적으로 규명할 수 있었으며, 이로 인해 기존의 O2 Plasma를 통해 얻어진 Vertical Profile 대비, COS Additive Gas를 추가하였을 경우, Pattern Profile 변화가 개선됨을 최종적으로 확인 할 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.33.2-33.2
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• 2009

Block copolymer lithography has attracted great attention for emerging nanolithography since nanoscaleperiodic patterns can be easily obtained through self-assembly process without conventional top-down patterning process. Since the morphologies of self-assembled block copolymer patterns are strongly dependent on surface energy of a substrate, suitable surface modification is required. Until now, the surface modification has been studied by using random copolymer or self-assembled mono layers (SAMs). However, the research on surface modifications has been limited within several substrates such as Si-based materials. In present study, we investigated the formation of block copolymer on Au substrate by $O_2$ plasma treatment with the SAM of 3-(p-methoxy-phenyl)propyltrichloro-silane [MPTS, $CH_3OPh(CH_2)_3SiCl_3$]. After $O_2$ plasma treatment, the chemical bonding states of the surface were analyzed by X-ray photoelectron spectroscopy (XPS). The static contact angle measurement was performed to study the effects of $O_2$ plasma treatment on the formation of MPTS monolayer. The block copolymer nanotemplates formed on Au surface were analyzed by scanning electron microscopy. The results showed that the ordering of self-assembled block copolymer pattern and the formation of cylindrical nano hole arrays were enhanced dramatically by oxygen plasma treatment. Thus, the oxidation of gold surface by $O_2$ plasma treatment enables the MPTS to form the monolayer assembly leading to surface neutralization of gold substrates.