• 제목/요약/키워드: plasma measurement

검색결과 780건 처리시간 0.026초

수소 Plasma 처리 후의 MgO 보호막에 대한 일함수 변화 측정 (Measurement of Changes in Work Function on MgO Protective Layer after H2-plasma Treatment)

  • 정재천;이석주;조재원
    • 한국전기전자재료학회논문지
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    • 제20권7호
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    • pp.611-614
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    • 2007
  • The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.

대기압 플라즈마 발생시 인가전압의 상승시간에 따른 영향 (Effect of Rise Time of a Pulse Bias Voltage on Atmospheric Plasma Generation)

  • 김재혁;진상일;김영민
    • 전기학회논문지
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    • 제57권7호
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    • pp.1218-1222
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    • 2008
  • We investigate the effect of rise time of a pulse bias voltage on atmospheric plasma generation. With the faster rise time of the pulse bias, the glow discharge appears to be more uniformly generated along the electrodes. I-V measurement confirms that higher loading power can be obtained using the faster rise time. A new understanding for atmospheric plasma generation at a micro-gap electrode is suggested.

다중회귀분석을 이용한 $CO_2$레이저 용접 비드 예측 (Estimation of $CO_2$ Laser Weld Bead by Using Multiple Regression)

  • 박현성;이세헌;엄기원
    • Journal of Welding and Joining
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    • 제17권3호
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    • pp.26-35
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    • 1999
  • On the laser weld production line, a slight alteration of the welding condition changes the bead size and the strength of the weldment. The measurement system is produced by using three photo-diodes for detection of the plasma and spatter signal in $CO_2$ laser welding. The relationship between the sensor signals of plasma or spatter and the bead shape, and the mechanism of the plasma and spatter were analyzed for the bead size estimation. The penetration depth and the bead width were estimated using the multiple regression analysis.

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LIF를 이용한 Hg-Ar(1Torr)의 플라즈마 밀도 측정 (Plasma Density Measurement of the Hg-Ar(1Torr) by LIF Method)

  • 이종찬;박대희;양종경
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권5호
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    • pp.213-217
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    • 2005
  • In this paper, we introduced a LIF measurement method and summarized the theoretical side. When an altered wavelength of laser and electric power, lamp applied electric power, we measured the relative density of the metastable state in mercury after observing a laser induced fluorescence signal of 404.8nm and 546.2nm, and confirmed the horizontal distribution of plasma density in the discharge lamp. Due to this generation, the extinction of atoms in a metastable state occurred through collision, ionization, and excitation between plasma particles. The density and distribution of the metastable state depended on the energy and density of plasma particles, intensely This highlights the importance of measuring density distribution in plasma electric discharge mechanism study The results confirmed the resonance phenomenon regarding the energy level of atoms along a wavelength change, and also confirmed that the largest fluorescent signal in 436nm, and that the density of atoms in 546.2nm ($6^3S_1 {\to} 6^3P_2$ ) were larger than 404.8nm ($6^3S_1 {\to} 6^3P_1$). According to the increase of lamp applied electric power, plasma density increased, too. When increased with laser electric power, the LIF signal reached a saturation state in more than 2.6mJ. When partial plasma density distribution along a horizontal axis was measured using the laser induced fluorescence method, the density decreased by recombination away from the center.

LIF를 이용한 Hg-Ar의 플라즈마 밀도 측정 (Plasma Density Measurement of Hg-Ar by LIF Method)

  • 최용성;황종선;박계춘;송민종;김형곤;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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    • pp.27-32
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    • 2006
  • In this paper, we introduced a LIF measurement method and summarized the theoretical side. When an altered wavelength of laser and electric power, lamp applied electric power, we measured the relative density of the metastable state in mercury after observing a laser induced fluorescence signal of 404.8nm and 546.2nm, and confirmed the horizontal distribution of plasma density in the discharge lamp. Due to this generation, the extinction of atoms in a metastable state occurred through collision, ionization, and excitation between plasma particles. The density and distribution of the metastable state depended on the energy and density of plasma particles, intensely. This highlights the importance of measuring density distribution in plasma electric discharge mechanism study. The results confirmed the resonance phenomenon regarding the energy level of atoms along a wavelength change, and also confirmed that the largest fluorcscent signal in 436nm, and that the density of atoms in 546.2nm ($6^3S_1{\rightarrow}6^3P_2$) were larger than 404.8nm ($6^3S_1{\rightarrow}6^3P_2$). According to the increase of lamp applied electric power, plasma density increased, too. When increased with laser electric power, the LIF signal reached a saturation state in more than 2.6mJ. When partial plasma density distribution along a horizontal axis was measured using the laser induced fluorescence method, the density decreased by recombination away from the center.

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산소 유량별 플라즈마 방출광원 세기에 따른 전자온도 진단과 산화주석박막 특성연구 (Study on Electron Temperature Diagnostic and the ITO Thin Film Characteristics of the Plasma Emission Intensity by the Oxygen Gas Flow)

  • 박혜진;최진우;조태훈;윤명수;권기청
    • 한국표면공학회지
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    • 제49권1호
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    • pp.92-97
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    • 2016
  • The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

PDP 유동장 PIV 계측 (PIV Measurement on the Flows of PDP(Plasma Display Panel))

  • 도덕희;조경래;송주석;백태실;편용범;정우만
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집E
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    • pp.733-737
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    • 2001
  • Heat generated from the electronic parts in PDP is undesirable physical properties. To attain optimal arrangement of the electronic parts in PDP, thermal flows in PDP should be analyzed. PIV measurement has been made to quantify the characteristics of the inner flows and outer flows of an actual PDP. The quantity of heat flux from PDP has been estimated using the PIV results. Measurement system consists of Ar-ion laser, CCD camera and an image grabber installed on a host computer.

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레이저플라즈마의 제특성의 계측 (Measurement of properties of laser-produced plasmas)

  • 강형부
    • 전기의세계
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    • 제29권2호
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    • pp.118-128
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    • 1980
  • The properties of plasmas produced by high power glass laser were investigated with various methods of diagnostics. Electron temperature was estimated by measurement of soft X-ray, and ion temperature was estimated by measurement of the time-of-flight of ion. The measurement of incident and reflected laser light, and Schlieren and shadowgragh methods were also used. No influence of laser pulse duration on the temperature was observed in the case of durations 2, 4 and 10 nsecs. The effective heating of plasma occurred in about 2 nsec of beginning of incident laser pulse. The experimental results for fast rising laser pulse were discussed and the influence of resetime of laser pulse on the heating of plasma was described. Neutrons produced by irradiating laser beam to solid deuterium target were detected.

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알루미늄 분말 점화용 고밀도 스팀 플라즈마 제트 온도장 및 방출 스펙트럼 측정 (Temperature Field and Emission Spectrum Measurement of High Energy Density Steam Plasma Jet for Aluminum Powder Ignition)

  • 이상협;임지환;이도형;윤웅섭
    • 한국추진공학회지
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    • 제18권1호
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    • pp.26-32
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    • 2014
  • 본 연구에서 고에너지 금속 알루미늄의 효과적인 점화를 위해 개발한 직류 방식의 스팀 플라즈마 점화기 가스온도를 OH radical의 방출 스펙트럼을 사용하여 측정하였다. 플라즈마 제트온도는 초고온이므로 비접촉식 광학 계측 방법인 볼츠만 기울기법과 스펙트럼 비교 분석법을 이용하여 측정하였으며 각각의 방법은 정밀하게 검증 후 실험에 적용되었다. 플라즈마 점화기의 노즐 팁으로부터 30 mm 범위에서의 제트온도 측정결과 두 방법 모두 알루미늄의 점화온도(${\approx}2400K$) 이상의 2900 K ~ 5800 K를 확인할 수 있었다.

Measurement of Defect Energy Level in MgO Layer

  • Son, Chang-Gil;Song, K.B.;Jeoung, S.J.;Park, E.Y.;Kim, J.S.;Choi, E.H.;J, S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1380-1383
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    • 2007
  • The secondary electron emission coefficient (${\gamma}$) of the cathode is an important factor for improving the discharge characteristics of AC-PDP, because of its close relationship to discharge voltage. In this experiment, we have investigated the electronic structure of the energy band in the MgO layer responsible for the high ${\gamma}$. We used three kinds of MgO pellet that have another component, and each MgO layers have been deposited by electron beam evaporation method. The work-functions of MgO layer have been investigated from their ion-induced secondary electron emission coefficient (${\gamma}$), respectively, using various ions with different ionization energies in a ${\gamma}-FIB$ (Focused Ion Beam) system. We have compared work-function with ${\gamma}-FIB$ system current signal for measurement defect energy level in MgO layer. MgO-A in the three types has lowest work-function value (4.12eV) and there are two defect energy levels.

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