• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.369-372
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• 1997

Wire Ion Plasma Source (WIPS) is a plasma device which has a thin wire anode, a coaxially-set cylindrical cathode and electrodes located in both ends of the cylinder. The potential between the anode and cathode changes logarithmically by this electrode configuration. This electrode configuration enables high-density plasma to produce even at a low anode voltage. Since the electrode configuration is axially symmetric and long. plasma with axially uniform number density can be produced. Using particle-in-cell(PIC) and Monte Carlo collision(MCC), we investigate the traiectory of electrons and the characteristics of D.C. discharge in Wire ton Plasma Source.

• Nuclear Engineering and Technology
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• v.35 no.3
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• pp.226-233
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• 2003

The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

• Journal of Astronomy and Space Sciences
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• v.39 no.3
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• pp.87-98
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• 2022

The Far-UltraViolet (FUV) imager onboard the Ionospheric Connection Explorer (ICON) spacecraft provides two-dimensional limb images of oxygen airglow in the nightside low-latitude ionosphere that are used to determine the oxygen ion density. As yet, no FUV limb imager has been used for climatological analyses of Equatorial Plasma Bubbles (EPBs). To examine the potential of ICON/FUV for this purpose, we statistically investigate small-scale (~180 km) fluctuations of oxygen ion density in its limb images. The seasonal-longitudinal variations of the fluctuation level reasonably conform to the EPB statistics in existing literature. To further validate the ICON/FUV data quality, we also inspect climatology of the ambient (unfiltered) nightside oxygen ion density. The ambient density exhibits (1) the well-known zonal wavenumber-4 signatures in the Equatorial Ionization Anomaly (EIA) and (2) off-equatorial enhancement above the Caribbean, both of which agree with previous studies. Merits of ICON/FUV observations over other conventional data sets are discussed in this paper. Furthermore, we suggest possible directions of future work, e.g., synergy between ICON/FUV and the Global-scale Observations of the Limb and Disk (GOLD) mission.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.203-209
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• 2000

This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.282-285
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• 2000

Four helical resonators are distributed in a 2 ${\times}$ 2 array by modifying upper part of the conventional reactive ion etching(RIE) type LCD etcher in order to prepare a large area plasma source. Since the resonance condition of the RF signal to the helical antenna, one RF power supply is used for delivering the power efficiently to all four helical resonators without an impedance matching network Previous work of 2 ${\times}$ 2array inductively coupled plasma(ICP)requires one matching circuit to each ICP antenna for more efficient power deliverly Distributions of ion density and electron temperature are measured in terms of chamber pressure, gas flow rate and RF power . By adjusting the power distribution among the four helical resonator units, argon plasma density of higher than 10$\^$17/㎥ with the uniformity of better than 7％ can be obtained in the 620 ${\times}$ 620$\textrm{mm}^2$ chamber.

• Journal of Powder Materials
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• v.19 no.1
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• pp.13-18
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• 2012

This study has been performed on the full density sintering of Fe nanopowder and the surface hardening by plasma ion nitriding. The Fe sintered part was fabricated by pressureless sintering of the Fe nanopowder at $700^{\circ}C$ in which the nanopowder agglomerates were controlled to have 0.5-5 ${\mu}m$ sized agglomerates with 150 nm Fe nanopowders. The green compact with 46% theoretical density(T.D.) showed a homogeneous microstructure with fine pores below 1 ${\mu}m$. After sintering, the powder compact underwent full densification process with above 98%T.D. and uniform nanoscale microstructure. This enhanced sintering is thought to be basically due to the homogeneous microstructure in the green compact in which the large pores are removed by wet-milling. Plasma ion nitriding of the sintered part resulted in the formation of ${\gamma}$'-$Fe_4N$ equilibrium phase with about 12 ${\mu}m$ thickness, leading to the surface hardening of the sintered Fe part. The surface hardness was remarkably increased from 176 $H_v$ for the matrix to 365 $H_v$.

• Nuclear Engineering and Technology
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• v.51 no.7
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• pp.1860-1865
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• 2019

The confinement degradation of the energetic particles during RMP would be a key issue in success of realizing the successful energy production using fusion plasma, because a 3.5 MeV energetic alpha particle should be able to sustain the burning plasma after the ignition. As KSTAR recent results indicate the generation of high-performance plasma(${\beta}_p{\sim}3$), the confinement of the energetic particles is also an important key aspect in neutral beam driven plasma. In general, the measured absolute value of the neutron intensity is generally used for to estimating the confinement time of energetic particles by comparing it with the theoretical value based on transport calculations. However, the availability of, but for its calculation process, many accurate diagnostic data of plasma parameters such as thermal and incident fast ion density, are essential to the calculation process. In this paper, the time evolution of the neutron signal from an He3 counter during the beam blank has permitted to facilitate the estimation of the slowing down time of energetic particles and the method is applied to investigate the fast ion effect on ELM suppressed KSTAR plasma which is heated by high energy deuterium neutral beams.

• Journal of the Korean Society of Safety
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• v.14 no.3
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• pp.134-139
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• 1999

In this study, PSII(plasma source ion implantation) was used to improve the biocompatibility of bone-anchored Ti implant. According to potentiodynamic anodic polarization test in deaerated Hank's solution, open circuit potential of ion implanted specimens were increased compare to that of unimplanted specimen ; besides, passive current density and critical anodic current density of ion implanted specimens were lower than unimplanted specimen.

• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.154-158
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• 2010

Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.