• 한국환경보건학회지
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• 제17권1호
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• pp.89-94
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• 1991

There are many pretreatment and detection methods for divalent cations in blood. But our purpose was to study the pretreatment of blood for the determination of cations by Ion Chromatography. We compared with recovery of Mg$^{++}$, and Ca$^{++}$ contained in plasma according to four pretreatment methods, that is, add of trichloroacetic acid and perchloric acid, dilution with distilled water and membrane filter method. As a result, add of trichloroacetic acid was found to be the most suitable method for good recovery of Mg$^{++}$ (98.0%) and Ca$^{++}$(96.0%) in plasma, and the Mg$^{++}$ and Ca$^{++}$ contents in plasma was 20 and 102 ($\mu$g/ml)

• 대한기계학회논문집A
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• 제27권4호
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• pp.632-637
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• 2003

In this study, the effect of surface treatment of CFRP and aluminum on the fracture toughness of CFRP/aluminum composites was investigated. CFRP was surface-treated by Ar$^{+}$ ion beam under oxygen environment, and the aluminum was surface-treated by DC plasma. CFRP was adhesively bonded to aluminum using the secondary bonding procedure. Cracked lap shear specimens were used to determine fracture toughness. Three cases of cracked lap shear specimens were made depending on the surface treatment. The values of fracture toughness of three cases were compared to each other It was found that the fracture toughness of ion beam-treated CFRP/aluminum composites was almost 72 % higher than that of unrented CFRP/aluminum composites. The fracture toughness of CFRP/plasma-treated aluminum composites was 50 % higher than that of untreated CFRP/aluminum composites.s.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.178-178
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• 2012

Neutral atom temperature was measured by Laser Rayleigh scattering method using neutral depletion by neutral heating with ideal gas law in Inductively coupled plasma. We observed sudden pressure change when plasma is turned on and off. We analyzed mechanism of neutral heating by employing zero-dimensional neutral and ion energy balance model simultaneously. The results showed that neutral atom temperature increase with ion density. The mechanism of neutral atom heating and cooling is mainly dominated by ion-neutral collision including elastic and charge-exchange collision and by wall cooling respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2044-2046
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• 2000

A system to monitor the ion mass and charge-state as well as plasma potential value during plasma source ion implantation (PSII) has been developed. It was tested with 30-kV PI3D setup using alternatively hot cathode do (HC) and inductively coupled RF (ICP) discharge sources. The design and performance of the system will be described, and experimental results in nitrogen and argon plasmas produced by modular HC-ICP source will be discussed.

• 마이크로전자및패키징학회지
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• 제9권4호
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• pp.31-34
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• 2002

For the mold die sticking mechanism, the major explanation is that the silica as a filler in EMC (epoxy molding compound) wears die surface to be roughened, which results in increase of adhesion strength. As the sticking behavior, however, showed strong dependency on the EMC models based on the experimental results from different semiconductor manufacturers, chemisorption or acid-base interaction is apt to be also functioning as major mechanisms. In this investigation, the plasma source ion implantation (PSII) using $O_2, N_2$, and $CF_4$ modifies sample surface to form a new dense layer and improve surface hardness, and change metal surface condition from hydrophilic to hydrophobic or vice versa. Through surface energy quantification by measuring contact angle and surface ion coupling state analysis by Auger, major governing mechanism for sticking issue was figured out to be a complex of mechanical and chemical factors.

• 대한금속재료학회지
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• 제46권1호
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 제21회 학술발표회 초록집
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• pp.101-101
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• 2001

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.262.1-262.1
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• 2014

Lipid peroxidation induces functional deterioration of cell membrane and induces cell death in extreme cases. These phenomena are known to be related generally to the change of physical properties of lipid membrane such as decreased lipid order or increased water penetration. Even though the electric property of lipid membrane is important, there has been no report about the change of electric properties after lipid peroxidation. Herein, we demonstrate the molecular energy band change in red blood cell membrane through peroxidation by air-based atmospheric pressure DBD plasma treatment. Ion-induced secondary electron emission coefficient (${\gamma}$ value) was measured by using home-made gamma-focused ion beam (${\gamma}$-FIB) system and electron energy band was calculated based on the quantum mechanical Auger neutralization theory. The oxidized lipids showed higher gamma values and lower electron work functions, which implies the change of surface charging or electrical conductance. This result suggests that modified electrical properties should play a role in cell signaling under oxidative stress.

• 한국재료학회지
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• 제27권4호
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• pp.211-215
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• 2017

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29 % (RIE texturing).

• 생명과학회지
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• 제21권12호
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• pp.1710-1715
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• 2011

Nano plasma ion (NPi) generator에서 발생한 NPi의 미생물에 대한 살균 효과를 측정하기 위해 미생물 종류, 조사 시간, 챔버 용적, 이온 수량, 거리에 따라 실험 하였다. 먼저 6종의 미생물 Escherichia coli, Pseudomonas aeruginosa, Salmonella typhimurium, Klebsiella pneumoniae, Staphylococcus aureus, Bacillus subtilis를 대상으로 실험한 결과 미생물 종류에 따라 각각 다른 감소율을 나타냈으며, 그람 음성균인 E. coli가 96.57%로 가장 높았고, 그람 양성균 중 포자를 생성하는 B. subtilis가 57.41%로 가장 낮았다. 그리고 NPi 조사시간에 따라 살균력 측정한 결과, 반응 초기에 대부분의 미생물이 사멸하였으며 이후 서서히 증가하였다. 또한 챔버의 크기에 따른 E. coli의 감소율을 비교하였으며 $0.005m^3$부터 $30m^3$까지 5개 챔버에서 NPi를 2시간 조사한 결과 용적이 증가함에 따라 포화이온 농도는 낮아졌고 이와 함께 살균력도 감소하였다. 이에 $1m^3$ 챔버에 NPi generator를 추가로 설치하여 포화 이온농도에 따른 E. coli의 감소율을 알아보았고 포화 이온 농도가 증가함에 따라 감소율도 함께 증가하는 것으로 나타났다. 마지막으로 NPi generator의 거리에 따른 E. coli의 감소율을 확인하였고 이온이 직접적으로 분출되는 부분의 99.19%를 제외한 나머지 위치에서 팬에 의한 이온 순환으로 포화농도가 비슷하게 유지 되었으며 약 97%의 감소율을 나타냈다.