• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
• /
• pp.459-461
• /
• 1995

An omegatron mass spectrometer was designed and fabricated. Experiments have been performed to demonstrate the instrument's operation in the ECR plasma device. By using this analyzer, mass spectra have been obtained in hydrogen plasmas, and typical results are presented. In the plasma omegatron, downstreaming plasma generated by ECR are entering the analyzer through a smsll floating aperture. We employ a biasing technique to reduce the ion velocity along the magnetic field and to keep the ions from drifting to the side pintos, and thus achieved improved ion collection and sensitivity. Mass spectra obtained show that main positive ion components are $H_3{^+}$ and $H_2{^+}$ with the density ratio of $H_2{^+}$ to $H_3{^+}$ $\simeq$ 0.2.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.26-29
• /
• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in $Cl_2(20)/CF_4(20)/Ar(80)$. As rf power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass sperometry.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.938-941
• /
• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.26-29
• /
• 2001

SrBi$_2$Ta$_2$$O_{9}$ thin films were etched at high-density C1$_2$/CF$_{4}$/Ar in inductively coupled plasma system. The etching of SBT thin films in C1$_2$/CF$_{4}$/Ar were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in Cl$_2$(20)/CF$_4$(20)/Ar(80). As f power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass spectrometry.y.

• 한국표면공학회지
• /
• 제48권4호
• /
• pp.179-184
• /
• 2015

Quadrupole Mass Spectrometers (QMS) is a very useful tool in vacuum process diagnosis. Tungsten filament based ion sources are vulnerable to contamination from process gas monitoring. Common symptoms of quadrupole mass spectrometer malfunction is appearance of unwanted contaminant mass peaks or no detection of any ion peaks. We disassembled used quadrupole mass spectrometer and found out black insulating deposits on inside of ion source parts. Five steps of cleaning procedure were applied and almost full restoration of functions were confirmed in two types of closed ion source quadrupole mass spectrometer. By using a numerical modeling (CFD-ACE+) technique, the electric potential profile of ion source with/without insulating deposit was calculated and showed the possibility of quadrupole mass spectrometer malfunction by the deterioration of designed potential profile inside the ion source.

• 대한전기학회논문지
• /
• 제41권5호
• /
• pp.492-501
• /
• 1992

In this paper, an ion analyzer is used in conjunction with a Langmuir probe to study the chracteristics of ECR plasma such as the ion temperature, ion current density and electron temperature as the operating pressure, ${\mu}$-wave power and axial position change, Silicon etching has been performed with RF-biasing and its etching chracteristics have been discussed in terms of the ion energy distribution function. The maximum value of ion current density appears in the range of 10S0-3T mbar and the broadening of ion energy distribution function increases as pressure increases. Therefore, as pressure decreases, anisotropy increases but selectivity to photoresist decreases.

• 한국전기전자재료학회논문지
• /
• 제11권2호
• /
• pp.95-100
• /
• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.109-110
• /
• 2000

Sputtering yield of MgO film in the AC-PDPs has been calculated by Monte Carlo simulation of ion scattering. In the ion energy range less than 50 eV, the sputtering yield is 4 ${\times}$ $10^{-4}$ for Xe ions and it is between 0.1 and 0.01 for He, Ne, and Ar ions. The erosion rate is estimated about $25{\AA}$ per hour for Xe ions in an actual PDP plasma for sustain and full white mode.

• Journal of Astronomy and Space Sciences
• /
• 제21권3호
• /
• pp.201-208
• /
• 2004

In this paper we have examined the effect of dust charge density on nonlinear ion acoustic solitary wave which propagates obliquely with respect to the external magnetic field in a dusty plasma. For the dusty charge density below a critical value, the Sagdeev potential $\Psi1(n)$ has a singular point in the region n < 1, where n is the ion number density divided by its equilibrium number density. If there exists a dust charge density over the critical value, the Sagdeev potential becomes a finite function in the region n < 1, which means that there may exist the rarefactive ion acoustic solitary wave. By expanding the Sagdeev potential in the small amplitude limit up to on4 near n=1, we find the solution of ion acoustic solitary wave. Therefore we suggest that the dust charge density plays an important role in generating the rarefactive solitary wave.

• 한국표면공학회지
• /
• 제24권3호
• /
• pp.119-124
• /
• 1991

Recently, the trend of research in hard coating is concentrate on developing the process of ionization rate under low operating pressure, to get the thin film with high adhesion and dense microstructures. In this study ionization rate enhancement type PVD process using permanent magnet is developed, which enhances the ionization rate by confining the plasma suppressing the wall loss of electron. By the result to investigate the characteristic of glow discharge, the ionization rate of this process is enhanced about twice as high as that of triod BARE process (about 26%), and more dense TiN microstructures are obtained in this process. Cylindrical ion energy analyzer is made and attached in front of a quadrupole mass filter for the analysis of the energy distribution of reactive gas and activated gas ions from the plasma zone. To analyze the operation mechanism of ion energy analyzer, computer simulation is performed by calculation the electric field environment using finite element method. By these analyses of ion energy distribution of outcoming ions from the plasma zone, it is found that magnetic field enhances ion kinetic energy as well as ionization rate. The other results of this study is that the foundation of feed-back system is constructed, which automatically control the partial pressure of reactive gas. In can be possible by recording the data of mass spectrum and ion energy analysis using A-D converter.