• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.5
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• pp.982-988
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• 2009

In a surface type ac PDP having $200{\mu}m$ gap between the surface electrodes, the luminous efficacy has a reciprocal dependence on the sustaining frequency. The discharge current flowing to the address electrodes are measured to investigate the phenomena and spectral intensity from visible light to infra red is measured to verify phosphor saturation with the frequency. Experiments show the discharge between the address and surface electrodes deteriorates the efficacy in high sustaining frequencies. Pulse width modulation is introduced to improve the efficacy. In optimum conditions, we obtained 1.99lm/w and 1.79lm/w at 200kHz and 250kHz, respectively.

• Proceedings of the KIEE Conference
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• 2005.10c
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• pp.223-225
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• 2005

This paper presents a novel prototype of a current source resonant inverter using insulated gate bipolar transistors for driving a streamer reactor, streamer generation technology has been recognized as one of the best methods for water treatment, disinfection, industrial wastes utilization, and so on. However, some technological difficulties related to efficient streamer production have been significant problems restricting streamer usage in the industrial plants. Introduced in this paper is a pulse density modulated high frequency inverter for a plasma generate, which is developed with the aim to improve power conversion and control characteristics of the streamer reactor by using advances in power electronic technology. The developed system implements the feedforward control-based pulse density modulation control scheme with pulse width modulation feedback control strategy to compensate temperature and other environmental influences on streamer discharge.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.132-133
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• 2007

2개의 주파수가 인가된 유도결합 플라즈마(ICP)를 이용하여 주파수 조합(13.56 or 27.12/2MHz)과 안테나의 캐패시턴스 변화에 따른 $SiO_2$ 와 poly-Si 의 식각특성을 연구하였다. 본 실험의 결과로, 27.12 MHz에서 plasma density가 높다는 것과 13.56 MHz에서 center high profile이 쉽게 형성됨을 알 수 있었다. $SiO_2$ 식각에서는 non-uniformity와 etch rate모두 27.12 MHz가 13.56 MHz보다 높다는 것을 알 수 있었고, poly-Si 식각에서는 non-uniformity와 etch rate모두 비슷한 경향을 나타낸다는 것을 알 수 있었다.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.64-71
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• 2023

If an impedance mismatch occurs between the source and load in a Radio Frequency transmission system, reflected power is generated. This results in incomplete power transmission and the generation of Reflected Power, which returns to the Radio Frequency generator. To minimize this Reflected Power, Impedance matching is performed. Fast and efficient Impedance matching, along with converging reflected power towards zero, is advantageous for achieving desired plasma characteristics in semiconductor processes. This paper explores Impedance matching by adjusting the Vacuum Variable Capacitor of an L-type Matching Module based on the trends observed in the voltage of the Phase Sensor and Electromotive Force voltage. After assessing the impedance matching characteristics, the findings are described.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Korean Journal of Community Nutrition
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• v.3 no.5
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• pp.695-706
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• 1998

This study was designed to investigate the associations of the percent body fat dietary intake, plasma lipoprotein profile, lipoprotein(a), and plasminogen activator inhibitor-1(PAI-1) concentrations of 1982 Korean subjects(men : 1000 and women : 982) between the ages of 40 and 59 years. The dietary assessment consisted of twenty-four hour dietary records and food frequency questionnaires. The subjects were identified into one of the five rating groups of % body fat : lean, underweight, normal, overweight and obese groups. The biochemical assessment included measurements of plasma total cholesterol(TC), HDL-cholesterol(HDL-C), LDL-cholesterol(LDL-C), triglyceride(TG), lipoprotein(a)(Lp(a)), and PAI-1. With respect to the ratio of percent energy intake of carbohydrate : protein : fat of the normal group of the women was 62% : 17% : 20%, respectively. Women apparently had a higher intake of carbohydrates than men(52% : 17 : 20%) did. There was a linear relationship between energy intake and % body fat in both mean and women(with the exception of the underweight group of women). The relationship of % body fat of men to the protein and fat intake was higher than that of the carbohydrate intake. Of the men in the study, intakes of energy, protein and alcohol were positively correlated to % body fat. In women, energy, carbohydrate and protein intake were positively correlated to % body fat, however, the fat, cholesterol and alcohol intake did not show any correlation to the % body fat in women. This study showed that % body fat was positively correlated with plasma TC, LDL-C, PAI-1 levels, and TG, but the % body fat was negatively correlated with plasma HDL-C level in both men and women. These results indicated that the high energy intake of obese or overweight subjects might contribute to several of the biochemical indices fo coronary heart disease(CHD) risk. In conclusion, increased energy intake is associated with overweight or obesity in middle aged Korean people. There was no relationship between % energy intake of fat and % body fat in the study, in middle-aged Korean men and women. The plasma lipid profile and PAI-1 level thought to be the risk factors of CHD were positively associated with percent body fat in middle aged Korean people.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.4
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• pp.316-329
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• 2012

In this paper, optimum design process of ICP (Inductively Coupled Plasma) torch, which has been used widely in aerospace application, such as supersonic plasma wind tunnel, is presented. For this purpose, the behaviors of equivalent circuit parameters (equivalent resistance and inductance, coupling efficiency) were investigated according to the variations of torch design parameters (frequency, $f$, confinement tube radius, $R$ and coil turn numbers, $N$) in the basis of analytical and numerical MHD (Magneto Hydro-Dynamics) models combined with electrical circuit theory. From the results, it is found that equivalent resistance is increased with the increase of $f$ values but vice versa for equivalent inductance. For elevated values of $R$ and $N$, however, both parameters tend to increase. Based on these observations, ICP torch with a power level of 10 kW can be optimized at the design ranges of $f$=4~6 MHz, $R$=17~25 mm and $N$=3~4 to maximize the electrical coupling efficiency, which is the ratio of equivalent resistance to equivalent inductance.

• Journal of the Korean Society of Safety
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• v.14 no.3
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• pp.93-100
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• 1999

Decomposition efficiency, power consumption, and applied voltage of CFC(Chlorofluorocatbon) were investigated by SPCP(surface induced discharge plasma chemical processing) reactor to obtain optimum process variables and maximum decomposition efficiencies. Decomposition efficiency of CFC-12 with various electric frequencies(5~50kHz). flow rates (100~1,000mL/min), initial concentrations(100~1,000ppm), electrode materials(W, Cu, Al). electrode thickness(1, 2, 3mm) and reference gases($N_2$, $O_2$, air) were measured and the products were analyzed with FT-IR. Experimental results showed that at the frequency of 10kHz, the highest decomposition efficiency of 92.7% for CFC-12 were observed at the power consumptions of 29.6W. respectively, and that decomposition efficiency decreased with increasing frequency above 20kHz and decomposition efficiency per unit power were 3.13%/W for CFC-12. Decomposition efficiency was increased with increasing residence times and with decreasing initial concentration of pollutants. Decomposition efficiency was increased with increasing thickness of discharge electrode and the highest decomposition efficiency was obtained for the electrode diameter of 3m. As the electrode material, decomposition efficiency was in order that tungsten(W), copper(Cu), aluminum (Al). Decomposition of CFC-12 in the reference gas of $N_2$ showed the highest efficiency among three reference gases, and then the effect of reference gas on the decomposition efficiency decreased in order of air and $O_2$. The optimum power for the maximum decomposition efficiency was 25.3W for CFC.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.129-135
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• 2005

In this study, we have analyzed the removal efficiencies of $SO_2$ and $SO_2/NO$ by the pulsed corona discharge process and investigated the effects of several process variables on those removal efficiencies systematically. The effects of process variables such as applied voltage, pulse frequency, residence time, and initial concentrations of reactants (NO, $SO_2$, $NH_3$, $H_2O$, and $O_2$) on the removal efficiency were analyzed. As the applied voltage, the pulse frequency or the residence time increases or as the $O_2$ or the $H_2O$ or the $NH_3$ concentration in the inlet feed gas stream increases, the $SO_2$ removal efficiencies and the simultaneous removal efficiencies of $SO_2/NO$ also increase. These experimental results can be used as a basis to design the pulsed corona discharge process to remove $NO_x$ and $SO_x$.