• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.39-43
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• 2014

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

• International Journal of Aeronautical and Space Sciences
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• 제16권3호
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• pp.339-346
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• 2015

Aerodynamic flow control phenomena were investigated with a low-current DC surface discharge plasma actuator. The plasma actuator was found to operate in three different discharge modes with similar discharge currents of about 1 mA or less. Stable continuous DC discharge without audible noise was obtained at higher ballast resistances and lower discharge currents. However, even with continuous DC power input, a low-frequency self-pulsed discharge was obtained at lower ballast resistances, and a high-frequency self-pulsed discharge was obtained at higher set-point currents and higher ballast resistances, both with audible noise. The Schlieren image reveals that the low-frequency self-pulsed mode produces a synthetic jet-like flow implying that a gas heating effect plays a role, even though the discharge current is small. The high-frequency self-pulsed mode produces pulsed jets in a tangent direction, and the continuous DC mode produces a steady straight pressure wave. Particle image velocimetry (PIV) images reveal that the induced flow field by the low-frequency self-pulsed mode has flow propagating in the radial direction and centered between the electrodes. The high-frequency self-pulsed mode and continuous DC mode produce flow from the anode to the cathode. The perturbed region downstream of the cathode is larger in the high-frequency self-pulsed mode with similar maximum speeds.

• 한국표면공학회지
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• 제47권5호
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• pp.221-226
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• 2014

A low temperature plasma nitrocarburizng was implemented on the duplex stainless steel to achieve the enhancement of surface hardness without degradation of its corrosion resistance. Attempts were made to investigate the influence of Pulse frequency and Duty factor of pulsed power in a high Pulse frequency regime on the surface characteristics of the hardened layer. The hardened layer (S-phase) was formed on all of the treated surfaces. Surface hardness reached up to 1300 $HV_{0.1}$ which is about 4.6 times higher than that of the untreated material (280 $HV_{0.1}$). The thickness of the hardened layer tends to increase lightly with the higher Pulse frequency and the higher Duty factor. The corrosion resistance of nitrocarburized duplex stainless steel was almost similar to that of the untreated material. Both the Pulse frequency and the Duty factor do not have a significant influence on the corrosion property of plasma treated duplex stainless steel.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.59-63
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• 2003

Modal properties of guided waves along circular dispersive double negative (DNG) index metamaterial rod waveguides are numerically investigated. Identical forms of dispersive dielectric and magnetic material constants are used for simplicity. For degenerated azimuthally symmetric mode, a multimode region, a single mode region, a band gap region and a forbidden region are found which cannot be observed in the case of the conventional dielectric rod waveguide. As the normalized frequency goes down, discrete guided modes are continuously generated, which is a reverse property of conventional dielectric rod waveguide. Also, there are high-frequency cutoffs, which have been generally examined in dispersive circular geometries such as a plasma column or a plasma Goubau line. In the single mode region, both the low- and high-frequency cutoffs are existed where the propagation constants are continued between the guided oscillating and surface modes.

• 반도체디스플레이기술학회지
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• 제23권1호
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• pp.52-55
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• 2024

In this paper, a state change study was conducted through Frequency Domain Reflectometry (FDR) technology for the process chamber of plasma equipment for semiconductor manufacturing. In the experiment, by direct connecting the network analyzer to the RF matcher input of the 300 mm plasma enhanced chemical vapor deposition (PECVD) chamber, S11 was measured in a situation where plasma was not applied, and the frequency domain reacting to the chamber state change was searched. Response factors to changes in the status, such as temperature, spacing of the heating chuck, internal pressure difference, and process gas supply state were confirmed. Through this, the frequency domain in which a change in the reflection value was detected through repeated experiments. The reliability of the measured micro-displacement was verified through reproducibility experiments.

• 대한기계학회논문집A
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• 제27권8호
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• pp.1266-1272
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• 2003

This paper presents a new class of magnetic microsensors based on the Hall effect in AC microplasma. In the theoretical study, we develop a simple model of the plasma Hall sensor and express the plasma Hall voltage as a function of magnetic field, plasma discharge field, pressure, and electrode geometry. On this basis, we have designed and fabricated magnetic microsensors using AC neon plasma. In the experiment, we have measured the Hall voltage output of the plasma microsensors for varying five different conditions, including the frequency and the magnitude of magnetic field, the frequency and the magnitude of plasma discharge voltage, and the neon pressure. The fabricated magnetic microsensors show a magnetic field sensitivity of 8.87${\pm}$0.18㎷/G with 4.48% nonlinearity.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2009년도 한국우주과학회보 제18권2호
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• pp.43.1-43.1
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• 2009

Electromagnetic radiation at the plasma frequency and its second harmonic, the so-called plasma emission, is fundamental process responsible for solar type II and III radio bursts. There have also been occasional observations of higher-harmonic plasma emissions in the solar-terrestrial environment. We will present that the simulation effort on characterizing the electron beam-generated plasma emission process at POSTECH. We have developed fully electromagnetic particle-in-cell (PIC) simulation code with three dimensions. We simulated harmonic plasma emission with various beam condition. Qualitative comparison with the traditional plasma frequency and second harmonic radiation theory is in good agreement. Higher harmonic emissions agree with the theory of coalescence of Langmuir and harmonic EM wave.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• 한국표면공학회지
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• 제39권3호
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.