• YAKHAK HOEJI
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• v.42 no.5
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• pp.519-526
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• 1998

This study was performed in order to investigate the effect of renal function of NG-nitro-L-arginine (L-NOARG), inhibitor of nitric oxide (NO) synthase, in dog and ra bbit. L-NOARG, when given intravenously in dogs, exhibited the decrease in urine flow (vol), renal plasma flow (RPF), osmolar clearance ($C_{osm}$) and amounts of sodium and potassium excreted in urine($E_{Na},\;E_K$). These renal functions of L-NOARG showed the same aspect in rabbit, too. L-NOARG, when administered into a renal artery, showed the same pattern as was obtained when given intravenously in both experimental and control kidney in dog. L-NOARG administered into the carotid artery showed the decrease in Vol, RPF, $E_{Na}$, in a low doses that did not show any effect when given intravenously. Above results suggest that L-NOARG produces antidiuretic action in dog and rabbit, and these antidiuretic actions may be mediated by central action.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.47-52
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• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.212-218
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• 2012

The optical properties of AZO thin films prepared by the RF mangnetron sputtering system was studied to research the dependance of chemical properties of substrate. The substrate was the SiOC film deposited by Inductively coupled plasma chemical vapor deposition with various gas flow rate of $O_2$ and Ar (DMDMOS). In accordance with the increase of Ar gas flow rates, the Si-O bond in the SiOC film increased and then progressed the amorphism. The roughness of AZO grown on SiOC film with high degree of amorphism decreased and then improved the flatness of surfaces. Moreover, the ultra violet emission with high intensity was spontaneously induced in the AZO film growed on SiOC film with high degree of amorphism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.782-787
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• 2004

Superconducting flux flow transistor (SFFT) is based on a control of the Abrikosov vortex flowing along a channel. The induced voltage by moving of the Abrikosov vortex in an SFFT is greatly affected by the thickness, the width, and the length of channel. In order to fabricate a reproducible channel in the SFFT, we studied the variation of the critical characteristics of ${YBa}_2{Cu}_3{O}_7-\delta(YBCO)$ thin films with the etching time using ICP (Inductively coupled plasma) system. From the simulation, it was certified that the vortex velocity was increased in a low pinning energy at channel width 0,5 mm. The surfaces of YBCO thin film were etched by ICP etching system. We observed the etched channel surfaces by AFM (Atomic Force Microscope) and measured the critical current density with etching time. As a measured results, the etching thickness of channel should be optimized to fabricated a flux flow transistor with specified characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.132-136
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• 2009

SiOC thin film of hybrid-type that is the limelight as low dielectric material of next generation were deposited by plasma enhanced chemical vapor deposition (PECVD) method with bistrimethylsilylmethane (BTMSM) precursor increased by 2 sccms from 24 sccms to 32 sccm. Manufactured samples are analyzed components by measuring FT/IR absorption lines. It is a tendency that seems to be growing of Si-O-Si(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The chemical shift in the XPS analysis was shown in the specimens between the BTMSM=26 sccm and BTMSM = 28 sccm. The binding energy of Si 2p, C 1s and O 1s electron orbit spectra was the low-est at the specimen of the BTMSM=26 sccm. From the results of electrical Properties using the 1 MHz C - V measurements, the dielectric constant was 2.32 at the specimen with the BTMSM = 26 sccm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.12
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• pp.2247-2252
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• 2008

The SiOC films as the carbon doped silicon oxide film were prepared with the variation of flow rater ratios by plasma enhanced chemical vapor deposition. The samples were analyzed by the fourier transform infrared spectroscopy, I-V measurement and scanning electron microscopy. The samples were shown the chemical shift according to the flow rate ratios, and the grain did not formed at the sample with hybrid properties. The leakage currents decreased according to the increasing of the substrate temperature at the sample with hybrid properties, but the potential barrier increased.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1028-1034
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• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

• Journal of the Korean institute of surface engineering
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• v.52 no.3
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• pp.171-179
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• 2019

We have developed a numerical model to analyze flow dynamics and heat transfer characteristics of the cooling water in a circular rotating magnetron cathode by a moving boundary grid method realized in a commercial multiphysics package, CFD-ACE+. The numerical model is composed of a target, dual mass rotating cathode and cooling water connections. When the inlet and outlet of the cooling water are offset by the same distance from the rotation axis, the temperature at the center is higher by $50^{\circ}C$ at maximum. At 5 mm away from the target surface, the temperature profile showed typical center high characteristic. At heat input of 30 kW, the maximum temperature change of the cooling water hits $6^{\circ}C$ within 0.5 sec under 60 rpm. With a cooling water configuration of center in/edge out, the temperature of the center region of the target gets lowered. Within 100 seconds of plasma operation time, the cooling water temperature keeps getting higher.