Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of SiOCH Thin Film Lour Dielectric by BTMSM/O2 Flow Rates

BTMSM/O2 유량변화에 따른 SiOCH 박막의 저유전 특성

  • Published : 2009.02.01
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Abstract

SiOC thin film of hybrid-type that is the limelight as low dielectric material of next generation were deposited by plasma enhanced chemical vapor deposition (PECVD) method with bistrimethylsilylmethane (BTMSM) precursor increased by 2 sccms from 24 sccms to 32 sccm. Manufactured samples are analyzed components by measuring FT/IR absorption lines. It is a tendency that seems to be growing of Si-O-Si(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The chemical shift in the XPS analysis was shown in the specimens between the BTMSM=26 sccm and BTMSM = 28 sccm. The binding energy of Si 2p, C 1s and O 1s electron orbit spectra was the low-est at the specimen of the BTMSM=26 sccm. From the results of electrical Properties using the 1 MHz C - V measurements, the dielectric constant was 2.32 at the specimen with the BTMSM = 26 sccm.

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References

  1. M. R. Baklanov and K.Maex, 'Porous low dielectric constant materials for micro- electronics', Phil. Trans. R. Soc., A, Vol. 364, p. 201, 2006 https://doi.org/10.1098/rsta.2005.1679
  2. M. Morgen, E. Todd, J. H. Zhao, C. Hu, T. Cho, and P. S. Ho, 'Low dielectric constant materials for ULSI interconnects', Annu. Rev. Mater. Sci., Vo1. 30, p. 645, 2000 https://doi.org/10.1146/annurev.matsci.30.1.645
  3. Y. H. Kim, S. K. Lee, and H. J. Kim, 'Low- k Si-O-C-H compoiste films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilymethane precursor', J. Vac. Sci. Tech. A, Vol. 18(4), p. 1216, 2000 https://doi.org/10.1116/1.582328
  4. T. Oh, 'Generation of SiOC films by the thermal induction', Jpn. J. Appl. Phys., Vol. 44, No. 3, p. 1409, 2005 https://doi.org/10.1143/JJAP.44.1409
  5. T. Oh, K. M. Lee, S. T. Ko, K. S. Kim, K. J. Ahn, and C. K. Cho, 'Bonding structure of the cross-link in organosilicate films using $O_{2}$/BTMSM precursors', Jpn. J. Appl. Phys., Vol. 42, p. 1517, 2003 https://doi.org/10.1143/JJAP.42.1517
  6. T. Oh, H. S. Kim, S. B. Oh, and M. S. Wo, 'Chemical shift determined according to flow rate ratio $O_{2}$/BTMSM by fourier transform infrared spectra and x-ray photoelectron spectroscopy', Jpn. J. Appl. Phys., Vol. 42, p. 6292, 2003 https://doi.org/10.1143/JJAP.42.6292
  7. C. S. Yang, Y. H. Yu, K. M. Lee, H. J. Lee, and C. K. Choi, 'Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor', Thin Solid Films, Vol. 506-507, p. 50, 2006 https://doi.org/10.1016/j.tsf.2005.08.032
  8. J. Xu, C. S. Yang, and C. K. Choi, 'Annealing effects on the structural and electrical properties of SiOC(-H) films with low dielectric constant prepared by plasma- enhanced chemical vapor deposition', Journal of the Korean Physical Society, Journal of the Korean Physical Society, Vol. 45, No. 1, p. 175, 2004