• Korean Chemical Engineering Research
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• 제48권5호
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• pp.556-560
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• 2010

부타디엔 고무 소재의 접착력을 향상시키기 위하여 대기압 표면개질방식을 적용시켰다. 평판형 플라즈마반응기의 최적의 반응조건을 구하기 위하여 반응기체(질소, 아르곤, 산소, 공기), 기체유량(30~100 mL/min), 플라즈마 처리시간(0~30초) 및 선처리제의 개질방법(GMA, 2-HEMA)을 변화시켜 실험하였다. 처리 전후의 소재의 표면변화는 SEM과 ATR-FTIR로 측정하였다. 기체의 유량과 처리시간이 증가함에 따라 접촉각이 감소하였고, 반응 기체는 공기로 유량 60 mL/min, 처리시간 5초 및 2-HEMA 첨가 선처리제를 사용하였을 때 최대의 접착박리강도를 나타내었다. 결과적으로 대기압식 평판형 플라즈마 처리방식으로 고무소재 표면의 젖음성과 접착박리강도가 개선되었음을 확인하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.71-72
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• 2007

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2011년도 한국우주과학회보 제20권1호
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• pp.29.1-29.1
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• 2011

The magnetic dipolarizations at the tail are often, if not always, associated with plasma flows of some magnitude. The associated flow direction is known to be earthward most often but not necessarily always. It is the primary goal of this paper to clarify the association between dipolarizations and the associated flow characteristics in general, but with a primary emphasis on tailward flow cases. Based on a number of dipolarizations that we identify at the near-Earth tail using the THEMIS tail observations we first confirm that dipolarizations can in general initiate in association with both earthward and tailward flows. Also, the main direction of the plasma flow, whether being earthward or tailward, is not critical in determining the intensity of the dipolarizations. We actually identify some events of tailward flow-associated dipolarizations that are as much intense as the earthward flow-associated events. The occurrence rate of the tailward flow-associated dipolarizations is mainly concentrated in the radial region of < 10 RE and in the local time region of 22-01 hr. However, its relative occurrence rate is rather low, ~19 % in the radial region and ~15.3 % in the local time region, as compared to that for the events associated with all other types of flows. Furthermore, the flow direction often changes no matter whether it is initially earthward or tailward near the onset time. As a consequence, the net transport of the magnetic flux during the main duration of the dipolarization process is earthward for nearly all of the dipolarizations that initiate with dominantly tailward flows near the onset, as is the case for those that initiate with dominantly earthward flows.

• 한국표면공학회지
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• 제29권6호
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• pp.695-702
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• 1996

Plasma spraying process was employed to produce HA coating on Ti6A14V alloy for the development of a dental implant. The goal of this research was to find optimum spraying conditions for HA coating on Ti6Al4V. This study was thus designed carefully to evaluate how spraying parameters affect various physical properties of a HA coating layer, such as phase composition and bond strength. In plasma spraying, spraying parameters such as hydrogen flow rates and spraying distances were varied systematically to change the degree of the melting of starting HA powder in plasma jet. It was revealed that the deposition efficiency increased with increasing a hydrogen flow rate, and the bond strength between the HA-coated layer and Ti-alloy substrate increased with hydrogen flow rate, but decreased with spraying distance. Therefore, the hydrogen flow rate and the spraying distance should be carefully controlled to obtain the reasonable bond strength simultaneously.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.1-6
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• 2002

Plasma processing of semiconductor materials plays a dominant role in microelectronic technology. During last century, plasma have gone a way from laboratory phenomena to industrial applications due to intensive progress in both scientific and industrial trends. Improvement and development of new experience together with development of plasma theory and plasma diagnostics methods. A most parameters (pressure, flow rate, power density) and various levels of plasma system (energy distribution, volume gas chemistry, transport, heterogeneous effects) to understand the whole process mechanism. It will allow us to choose a correct ways for processes optimization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.3-6
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.

• 분석과학
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• 제25권5호
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• pp.265-272
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• 2012

기존의 Okamoto cavity를 변형시킨 WR-340 도파관을 사용한 cavity를 제작하고 고출력(2.45 GHz, 2 kW)의 헬륨, 질소 및 아르곤 마이크로파 플라즈마(MIP; Microwave Induced Plasma)를 성공적으로 형성시켰다. 플라즈마 생성의 주요한 요인들은 내부전도체의 직경과 내부전도체와 외부전도체간의 간격, 내부전도체 끝과 토치의 위치 등이 있으며 그 중 헬륨 마이크로파 플라즈마에 대하여 cavity의 디자인을 최적화시키고 그 특성을 조사하였다. ICP(Inductively Coupled Plasma)용 mini 토치와 자체 제작한 나선형흐름토치를 비교 연구한 결과, 헬륨 플라즈마 기체 흐름량은 약 25 L/min~30 L/min로서 서로 비슷하였다. 토치 상단부에 석영관을 덧씌워 공기유입을 막은 결과, 340 nm 근처의 NH분자선들이 없어지거나 감소하였다. 플라즈마의 온도 및 전자밀도를 측정한 결과, 4,350 K의 들뜸 온도와 $3.67{\times}10^{11}/cm^3$의 전자밀도를 얻었다. 이 값들은 기존의 다른 마이크로파 플라즈마와 비슷하거나 약간 작은 값이다. 고출력의 플라즈마로서 수용액을 직접 분석하는 것이 가능하였고 현재 Cl의 검출한계는 116 mg/L 수준으로서 아직 분석적인 최적화가 필요한 단계이다.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2014년도 제49회 KOSCO SYMPOSIUM 초록집
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• pp.203-205
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• 2014

This paper is suggesting about glass melting technology, using both plasma and combustion heat source. The mixed flame was formed to flow pattern of turning by plasma and combustion in melting zone. The burning time was extremely extended for vitrification of raw materials in melting zone, as a result, meting time was significantly reduced. This system was designed to smaller size than existing glass melting facilities. We had achieved to 30% energy saving, due to reduce residence time of melted materials inside furnace.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.157.1-157
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• 2001

A new methodology is presented to diagnose faults in equipment plasma. This is accomplished by using neural networks as a pattern recognizer of radio frequency(rf) impedance match data. Using a realtime match monitor system, the match data were collected. The monitor system consisted mainly of a multifunction board and a signal flow diagram coded by Visual Designer. Plasma anomaly was effectively represented by electrical match positions. Twenty sets of fault-symptom patterns were experimentally simulated with experimental variations in process factors, which include rf source power, pressure, Ar and O$_2$ flow rates. As the inputs to neural networks, two means and standard deviations of positions were used ...