• Journal of Surface Science and Engineering
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• v.47 no.2
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• pp.75-80
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• 2014

Nanocrystalline diamond(NCD) films on steel(SKH51) has been investigated using SiC interlayer film. SiC was deposited on SKH51 or Si wafer by RF magnetron sputter. NCD was deposited on SiC at $600^{\circ}C$ for 0.5~4 h employing microwave plasma CVD. Film morphology was observed by FESEM and FIB. Film adherence was examined by Rockwell C adhesion test. The growth rate of NCD on SiC/Si substrate was much higher than that on SiC/SKH51. During particle coalescence, NCD growth rate was slow since overall rate was determined by the diffusion of carbon on SiC surface. After completion of particle coalescence, NCD growth became faster with the reaction of carbon on NCD film controlling the whole process. In the case of SiC/SKH51 substrate, a complete NCD film was not formed even after 4 h of deposition. The adhesion test of NCD/SiC/SKH51 samples revealed a delamination of film whereas that of SiC/SKH51 showed a good adhesion. Many voids of less than 0.1 ${\mu}m$ were detected on NCD/SiC interface. These voids were believed as the reason for the poor adhesion between NCD and SiC films. The origin of voids was due to the insufficient coalescence of diamond particles on SiC surface in the early stage of deposition.

• Resources Recycling
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• v.22 no.5
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• pp.50-55
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• 2013

The recovery of copper from spent photovoltaic ribbon was conducted using thermal treatment method at the range of temperature of $300^{\circ}C$ to $600^{\circ}C$ under inert atmosphere. The coating layer consisted of lead of 68.99 wt.% and tin of 31.21 wt.% was melted down at elevated temperatures and was collected on the bottom of crucible. The chemical composition of copper ribbon after thermal treatment was analyzed by ICP-MS (Inductively coupled plasma mass spectrometry) and the purity of copper was found to be obtained up to about 96 wt.% regardless of temperatures. The cross-sectional area of the specimen was also examined by SEM (scanning electron microscopy) and EDX (energy dispersive X-ray microscopy).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.9
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• pp.1035-1040
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• 2011

This research was performed on a microfilter made of a hybrid material (ceramic + metal) that was coated with ceramics on the metal-filter surface by using the thermal spray method. The ceramic powders used were $Al_2O_3+40TiO_2$ powder with a particle size of $20{\mu}m$ and $Al_2O_3$ (98%+)powder with a particle size of $45{\mu}m$. The metal filters were filter-grade $20{\mu}m$, $30{\mu}m$, and $50{\mu}m$ sintered metal powder filters (SIKA-R 20 IS, 30 IS, 50 IS; Sinter Metals Filters) and filter-grade $75{\mu}m$ sintered mesh filter with five layers. Ceramic-coated filters that were coated using the thermal spray method had a great influence on powder material, particle size, and coating thickness. However, these filters showed a fine performance when used as micro-filters.

• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.27-33
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• 2003

Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.

• Journal of Surface Science and Engineering
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• v.49 no.1
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• pp.46-53
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• 2016

The structure of plasma electrolytic oxidation (PEO) coatings was investigated as a function of NaOH concentration in 0.06 M $Na_2SiO_3$ + 0.06 M $Na_3PO_4$ solution by using SEM and epoxy replica method. The PEO film was formed on AZ31 Mg alloy by the application of anodic pulse current with 0.2 ms width and its formation behavior was studied by voltage-time curves during the formation of PEO films. It was found that the addition of NaOH into $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ containing aqueous solution causes a decrease in the PEO film formation voltage, suggesting that dielectric breakdown of the PEO becomes easier with increasing $OH^-$ ion concentration in the solution. With increasing $OH^-$ ion concentration, thickness of the PEO film increased and surface roughness decreased. The size of pores formed in the PEO layer became smaller and the number of cracks in the PEO layer increased with increasing $OH^-$ ion concentration. Based on the experimental results obtained in the work, it is suggested that $OH^-$ ions in the solution can contribute not only to the dielectric breakdown but also to the formation of PEO films in the presence of $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ ions in the solution.

• Journal of Surface Science and Engineering
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• v.47 no.5
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• pp.263-268
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• 2014

Nanocrystalline diamond(NCD) coated SiC balls were applied in a ball-on-disk tribometer. After seeding in an ultrasonic bath containing nanometer diamond powders, $2.2{\mu}m$ thick NCD films were deposited on sintered 3 mm diameter SiC balls at $600^{\circ}C$ in a 2.45 GHz microwave plasma CVD system. Bare $ZrO_2$ and SiC balls were prepared for comparison as test balls. Tribology tests were performed in air with pairs of three different balls and mirror polished steel(SKH51) disk. The wear tracks on balls and disks were examined by optical microscope and alpha step profiler. Under the load of 3 N, the friction coefficients of steel against $ZrO_2$, SiC and NCD-coated balls were between 0.4 and 0.8. After a few thousands sliding laps, the friction coefficient of NCD-coated balls dropped from 0.45 to below 0.1 and maintained thereafter. Under a higher load of 10 N or 20 N with a long sliding distance of 2 km, $ZrO_2$ and SiC balls exhibited the similar friction coefficients as above. The friction coefficient of NCD-coated balls was less than 0.1 from the beginning and increased to above 0.1 steadily or with some fluctuations as sliding distance increased. NCD coating layers were found worn out after long duration and/or high load sliding test, which resulted in the friction coefficient higher than 0.1.

• Journal of the Korean Applied Science and Technology
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• v.36 no.1
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• pp.153-164
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• 2019

To develop a high performance SCR catalyst which has better specific surface area, lightness of weight and fast temperature response than those of existing commercial SCR catalyst, metal foam type SCR catalysts were prepared by washcoating with vanadium, tungsten and binder. The de-NOx performance test of the prepared catalysts was carried out on atmospheric micro-test unit at lab. scale according to space velocity variation and temperature change, and the characteristics of them were analyzed by Porosimeter, SEM(scanning electron microscope), EDX(energy dispersive x-ray spectrometer), ICP(inductively coupled plasma) and Stereomicroscope. The NOx reduction performance decreased as the space velocity increased and was found to be the best at 3.5 wt.% contents of the vanadium and tungsten. It was found that the larger amount of binder was added, the worse the NOx reduction performance was, which was considered to be that the number of active sites of the prepared catalyst surface was occupied by the binder. We found that the amount of binder to be added to prepare the catalyst should be properly controlled by the condition of coated catalyt surface.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.697-702
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• 2019

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon. A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.199-199
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• 2016

Commercially pure titanium (cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Electrochemical deposition method is an attractive technique for the deposition of hydroxyapatite (HAp). However, the adhesions of these coatings to the Ti surface needs to be improved for clinical used. Plasma electrolyte oxidation (PEO) enables control in the chemical com position, porous structure, and thickness of the $TiO_2$ layer on Ti surface. In addition, previous studies h ave concluded that the presence of $Ca^{+2}$ and ${PO_4}^{3-}$ ion coating on porous $TiO_2$ surface induced adhesion strength between HAp and Ti surface during electrochemical deposition. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study electrochemical characteristcs of Zn and Si coating on Ti-6Al-4V by PEO treatment. The coating process involves two steps: 1) formation of porous $TiO_2$ on Ti-6Al-4V at high potential. A pulsed DC power supply was employed. 2) Electrochemical tests were carried out using potentiodynamic and AC impedance methoeds. The morphology, the chemical composition, and the micro-structure an alysis of the sample were examined using FE-SEM, EDS, and XRD. The enhancements of the HAp forming ability arise from $Si/Zn-TiO_2$ surface, which has formed the reduction of the Si/Zn ions. The promising results successfully demonstrate the immense potential of $Si/Zn-TiO_2$ coatings in dental and biomaterials applications.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.