• The Korean Journal of Physiology and Pharmacology
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• 제4권3호
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• pp.211-217
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• 2000

Paxillin is a regulatory component of the complex of cytoskeletal proteins that link the actin cytoskeleton to the plasma membrane. However, the role of paxillin during smooth muscle contraction is unclear. We investigated a possible role for the membrane-associated dense plaque protein paxillin in the regulation of contraction in rat aortic vascular smooth muscle. The tyrosine phosphorylation of paxillin, which was increased by norepinephrine, reached a peak level after 1 min stimulation and then decreased with time. However, norepinephrine induced a sustained contraction that reached a steady state 30 min after application. Pretreatment with tyrphostin, an inhibitor of tyrosine kinase, inhibited the tyrosine phosphorylation of paxillin and also the contraction stimulated by norepinephrine. Both inhibitions were concentration-dependent, and the degree of correlation between them was high. These results show that, in rat aortic smooth muscle, tyrosine kinase(s) activated by norepinephrine may phosphorylate the tyrosine residues of paxillin, thereby providing a source of regulation during vascular smooth muscle contraction.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.68-72
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• 2008

AlGaInP high-brightness LEDs(HB-LEDs) have gained importance a variety of application operating in the red, orange, yellow and yellow-green wavelength. The light generated from inside LED chips should be emitted to the air through the surfaces of the chips. However, because of the differences between the semiconductor and air or epoxy's refractive index, some of the light was blocked so that caused lowering external quantum efficiency. In this study, nano-scale roughness on the top-GaP layer of AlGaInP epitaxial wafer was fabricated to improve' the brightness of AlGaInP LEDs. Nano-scale roughness was made by ICP dry etcher. Our AlGaInP LEDs with nano-scale roughness has higher brightness (about 28.5 %) than standard AlGaInP LEDs.

• Nuclear Engineering and Technology
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• 제6권4호
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• pp.253-259
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• 1974

펄스된 이온화상자(PIC)의 출력 신호전압이 전자밀도가 $10^{13}$-$10^{17}$ m$^{-3}$인 플라즈마들에 대해 측정되었다. 이 PIC 기술치 한 응용으로서 이체 재결합 상수들이 PIC의 출력신호전압으로 측정된 전자밀도들로부터 구해졌다. 압력의 함수로서의 이 값들은 이론적인 예측과 잘 부합하며, 수치는 300$^{\circ}$K에 있는 1-10기압의 $^3$He 플라즈마에 대해 5$\times$$10^{-14}$ -3$\times$$10^{-13}$ ㎥/sec의 범위에 있다.

• Journal of Information Display
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• 제3권1호
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• pp.11-16
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• 2002

This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• 한국전기전자재료학회논문지
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• 제18권12호
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• pp.1069-1074
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• 2005

In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.393-394
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• 2008

Carbon nanotubes are attractive nano-structured materials because of their remarkable electronic, physical, chemical properties. Due to these reasons, application researches of CNTs are actively processed on the display, the electronic element, the nano-diode fields and the semiconductor element. Today, The major issue of semiconductor technique are via and interconnects. CNTs are used to make via and interconnects because of high electric currents density and high heat transfer. Control of the orientation of grown CNTs is very important thing for making via and interconnects. Via are horizontal growth of CNTs and interconnects are vertical growth of CNTs. This research is based on the experiment using control of gas flow directions and DC bias. Scanning Electron Microscope (SEM) was used to check this experiment.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제42권5호
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• pp.295-300
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• 2016

Submucosal infiltration and the topical application of epinephrine as a vasoconstrictor produce excellent hemostasis during surgery. The hemodynamic effects of epinephrine have been documented in numerous studies. However, its metabolic effects (especially during surgery) have been seldom recognized clinically. We report two cases of significant metabolic effects (including lactic acidosis and hyperglycemia) as well as hemodynamic effects in healthy patients undergoing orthognathic surgery with general anesthesia. Epinephrine can induce glycolysis and pyruvate generation, which result in lactic acidosis, via ${\beta}2$-adrenergic receptors. Therefore, careful perioperative observation for changes in plasma lactate and glucose levels along with intensive monitoring of vital signs should be carried out when epinephrine is excessively used as a vasoconstrictor during surgery.