Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement of Brightness for AlGaInP High-brightness LEDs with Nano-scale Roughness on Top-GaP Surface

Top-GaP 상부에 나노 크기의 Roughness 처리에 의한 AlGaInP 고휘도 LED의 휘도 향상

  • Published : 2008.01.01
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Abstract

AlGaInP high-brightness LEDs(HB-LEDs) have gained importance a variety of application operating in the red, orange, yellow and yellow-green wavelength. The light generated from inside LED chips should be emitted to the air through the surfaces of the chips. However, because of the differences between the semiconductor and air or epoxy's refractive index, some of the light was blocked so that caused lowering external quantum efficiency. In this study, nano-scale roughness on the top-GaP layer of AlGaInP epitaxial wafer was fabricated to improve' the brightness of AlGaInP LEDs. Nano-scale roughness was made by ICP dry etcher. Our AlGaInP LEDs with nano-scale roughness has higher brightness (about 28.5 %) than standard AlGaInP LEDs.

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References

  1. C. P. Kuo, R. Fletcher, T. Osentowski, M. Lardizabal, M. Craford, and V. Robbins, 'High performance AlGaInP visible lightemitting diodes', App. Phys. Lett., Vol. 57, p. 2937, 1990 https://doi.org/10.1063/1.103736
  2. J. Kovac, L. Peternai, and O. Lengyel, 'Advanced light emitting diodes structures for optoelectronic applications', Thin Solid Films, Vol. 433, p. 22, 2003 https://doi.org/10.1016/S0040-6090(03)00314-6
  3. Th. Gessmann and E. F. Schubert, 'Highefficiency AlGaInP light-emitting diodes for solid-state lighting application', J. Appl. Phys., Vol. 95, No. 5, p. 2203, 2004 https://doi.org/10.1063/1.1643786
  4. G. B. Stringfellow and M. Gworge Craford, 'High brightness light emitting diodes semiconductor and semimetals', New York: Academic, Vol. 48, 1997
  5. R. H. Horng, S. H. Huang, D. S. Wuu, and Y. Z. Jiang, 'Characterization of large-area AlGaInP/Mirror/Si light-emitting diodes fabricated by wafer bonding', Jpn. J. Appl. Phys., Vol. 43, No. 5A, p. 2510, 2004 https://doi.org/10.1143/JJAP.43.2510
  6. P. C. Liu, C. Y. Hou, and Y. S. Wu, 'Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers', Thin Solid Films, Vol. 478, p. 280, 2005 https://doi.org/10.1016/j.tsf.2004.11.070
  7. D. H. Kim, C. O. Cho, Y. G. Roh, H. S. Jeon, and Y. S. Park, 'Enhanced light extraction from GaN-based light-emitting diodes with hol ographically generated two-dimensional photonic crystal patterns', Appl. Phys. Lett., Vol. 87, p. 203508 1, 2005 https://doi.org/10.1063/1.2132073
  8. T. S. Kim, P. O. Leisher, A. J. Danner, R. Wirth, K. Streubel, and K. D. Choquette, 'Photonic crystal structure effect on the enhancement in the external quantum efficiency of a red LED', IEEE Photon. Technol. Lett., Vol. 18, No. 17, p. 1876, 2006 https://doi.org/10.1109/LPT.2006.881235
  9. R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, 'Impact of texture-enhanced transmission on highefficiency surface-textured light-emitting diodes', Appl. Phys. Lett., Vol. 79, p. 2315, 2001 https://doi.org/10.1063/1.1397758