• Title/Summary/Keyword: plane glass

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Growth of ZnO Nanorod Using VS Method (기상증착공정에 의한 산화아연 나노로드의 성장)

  • Kim, Na-Ri;Kim, Jae-Soo;Byun, Dong-Jin;Rho, Dae-Ho;Yang, Jae-Woong
    • Korean Journal of Materials Research
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    • v.13 no.10
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    • pp.668-672
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    • 2003
  • The ZnO nanorods were synthesized using vapor-solid (VS) method on sodalime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of Zn powder at $500^{\circ}C$. As-fabricated ZnO nanorods had an average diameter and length of 85 nm and 1.7 $\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380 nm and a green emission at around 500 nm.

A Study of f-${\theta}$ Lens Design for Axisymmetric Spherical Surface for RGB Laser Display and its applications (RGB 레이저 가시화를 위한 축대칭 구면 f-${\theta}$ 렌즈 설계 및 프로젝션응용)

  • Lee, Y.M.;Choi, H.W.
    • Laser Solutions
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    • v.14 no.2
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    • pp.24-29
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    • 2011
  • The design of a telecentric f-${\theta}$ lens with a field of view (FOV) $30^{\circ}$ and an effective focal length of 1000mm is presented. The optical stop is placed at the front plane and the design is based on a geometric ray tracing technique, and the designed system consists of a series of convex and concave lenses. The designed f-${\theta}$ lens showed a considerable reduction in weight with a simplified structure and resulted in a good performance in the designated FOV. Detail analysis of rays is also presented. 653nm (red laser), 586nm (green laser), and 468nm (blue laser) were simulated as a light source and image illuminating source. The developed optical design requires 7 pieces of lenses made of SF1, N-FK56, N-LAK33, and BK7 glass materials. With optimal parametric design, the effective focal length was calculated to be 974.839mm which is very close to the initial design target. For the manufacturing purpose, the dimensions of lens curvature and thickness were truncated with error ranging 0.1% to 3.2%. As a result, the overall error was calculated to be 3.2% which can be still tolerable for display, laser material, and machining processing.

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Microstructure and Electrical Properties of In2O3 Thin Films Fabricated by RF Magnetron Sputtering (RF Magnetron Sputtering 방법으로 제조한 In2O3 박막의 미세구조와 전기적 특성)

  • Jeon, Yong-Su;Yun, Yeo-Chun;Kim, Seong-Su
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.290-295
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    • 2002
  • Microstructure and electrical properties of $In_2O_3$ transparent thin films are analyzed on the basis of Structure Zone Model (SZM) proposed by Thornton. Thin films are deposited on glass substrate by RF magnetron sputtering with variation of substrate temperature $(T_s)$ and argon gas pressure $(P_{Ar})$. Microstructure of Zone I of SZM is observed with lowering of substrate temperature or increasing of argon pressure. The higher electrical resistivity of those specimens is due to micro-pores or voids between columnar grains. At the conditions of $T_s=450^{\circ}C$ and $P_{Ar}$=4.2mTorr, the Zone II structure of SZM and the lowest electrical resistivity $(2.1{\times}10^{-2}{\Omega}cm)$ are observed. The dense structure of columnar grains with faceting on growing surface and preferred orientation of (100) plane are observed in those specimens.

Electrical and Optical Properties of ZnO : Al Films Prepared by the DC Magnetron Sputtering System (직류 Magnetron Sputter 법으로 제막된 ZnO : Al 박막의 전기광학 특성)

  • 김의수;유세웅;유병석;이정훈
    • Journal of the Korean Ceramic Society
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    • v.32 no.7
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    • pp.799-808
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    • 1995
  • Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

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The property of surface morphology of AZO films deposited at low temperature with post-annealing (저온증착 AZO 박막의 분위기 후열처리에 따른 표면 형상 특성)

  • Jeong, Yun-Hwan;Chen, Ho;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.417-418
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    • 2008
  • Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by DC magnetron sputtering on glass(corning 1737) and Si substrate at temperature of $100^{\circ}C$ and then annealed at temperature of $400^{\circ}C$ for 1hr in Ar and vaccum. The AZO films were etched in diluted HCL (0.5 %) to examine the surface morphology properties. After annealing, Structural and electrical property were investigated. The c-axis orientation along (002) plane was enhanced and the electrical resistivity of the AZO film decreased from $1.1\times10^{-1}$ to $1.6\times10^{-2}{\Omega}cm$. We observed textured structure of AZO thin film etched for 2s.

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Compression failure and fiber-kinking modeling of laminated composites

  • Ataabadi, A. Kabiri;Ziaei-Rad, S.;Hosseini-Toudeshky, H.
    • Steel and Composite Structures
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    • v.12 no.1
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    • pp.53-72
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    • 2012
  • In this study, the physically-based failure models for matrix and fibers in compression and tension loading are introduced. For the 3D stress based fiber kinking model a modification is proposed for calculation of the fiber misalignment angle. All of these models are implemented into the finite element code by using the advantage of damage variable and the numerical results are discussed. To investigate the matrix failure model, purely in-plane transverse compression experiments are carried out on the specimens made by Glass/Epoxy to obtain the fracture surface angle and then a comparison is made with the calculated numerical results. Furthermore, shear failure of $({\pm}45)_s$ model is investigated and the obtained numerical results are discussed and compared with available experimental results. Some experiments are also carried out on the woven laminated composites to investigate the fracture pattern in the matrix failure mode and shown that the presented matrix failure model can be used for the woven composites. Finally, the obtained numerical results for stress based fiber kinking model and improved ones (strain based model) are discussed and compared with each other and with the available results. The results show that these models can predict the kink band angle approximately.

Properties of ZnO:Al Thin Films Deposited by RF Magnetron Sputtering with Various Base Pressure (RF Magnetron Sputtering법으로 제작한 ZnO:Al 박막의 초기 압력에 따른 특성)

  • Kim, D.K.;Kim, H.B.
    • Journal of the Korean Vacuum Society
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    • v.20 no.2
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    • pp.141-145
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    • 2011
  • ZnO:Al thin films were deposited by RF magnetron sputtering with various base pressure, and their structural, optical, and electrical properties were studied. The influence of the base pressure on the ZnO:Al thin film was confirmed and a high-quality thin film was obtained by controlling the base pressure. In all Al-doped ZnO thin films, the preferred orientation of (002) plane was observed and light transmittance in visible region (400 nm~800 nm) had above 85%. With decreasing of base pressure, crystallinity, resistivity, and figure of merit were improved. The improvement of resistivity with base pressure was attributed to the change of grain size.

A Study on the Fabrication and Characteristics of ITO thin Film Deposited by the Ionized Cluster Beam Deposition (Ionized Cluster Beam 증착방법을 이용한 Indium-Tin-Oxide(ITO) 박막의 제작과 그 특성에 관한 연구)

  • 최성창;황보상우;조만호;김남영;홍창의;이덕형;심태언;황정남
    • Journal of the Korean Vacuum Society
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    • v.5 no.1
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    • pp.54-61
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    • 1996
  • Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

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Design of Transparent Electromagnetic Absorbing Structure using Metal Grid Mesh Printing (Metal Grid Mesh 인쇄를 이용한 투명 전파 흡수구조 설계)

  • Yoon, Sun-Hong;Lee, Jun-Sang;Lee, In-Gon;Hong, Ic-Pyo
    • Journal of the Korea Institute of Military Science and Technology
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    • v.19 no.3
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    • pp.294-301
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    • 2016
  • In this paper, we designed the transparent circuit analog radar absorbing structure using printed metal grid mesh for enhanced optical transmittance. To obtain wideband electromagnetic absorption and enhanced optical transparency at X-band, we proposed the resistive FSS(Frequency Selective Surface) using printed metal mesh pattern on transparent glass with PEC(Perfect Electric Conductor) plane using ITO(Indium Thin Oxide) coating. We then fabricated the proposed structure to verify the simulation results obtained from commercial EM simulator. The comparisons between the simulation and measured results show good agreements. The results also show that the proposed radar absorbing structure can provide wideband reflection as well as better optical transparency. We can apply this proposed structure to the canopy of stealth aircraft and other stealth and security applications for visible transparency.

The Effect of Electrical and Optical Characteristics on ZnO Thin Film with Si Dopant (Si 첨가물이 ZnO의 전기적, 광학적 특성에 미치는 영향)

  • Kim, Jun-Sik;Jang, Gun-Eik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.6
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    • pp.480-485
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    • 2011
  • ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.