Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effect of Electrical and Optical Characteristics on ZnO Thin Film with Si Dopant

Si 첨가물이 ZnO의 전기적, 광학적 특성에 미치는 영향

  • Kim, Jun-Sik (Department of Materials Engineering, Chungbuk National University) ;
  • Jang, Gun-Eik (Department of Materials Engineering, Chungbuk National University)
  • 김준식 (충북대학교 신소재공학과) ;
  • 장건익 (충북대학교 신소재공학과)
  • Received : 2011.04.08
  • Accepted : 2011.05.19
  • Published : 2011.06.01
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Abstract

ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

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References

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