• KSII Transactions on Internet and Information Systems (TIIS)
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• v.8 no.8
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• pp.2833-2850
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• 2014

This paper proposes a novel framework for traffic video classification based on chaotic features. First, each pixel intensity series in the video is modeled as a time series. Second, the chaos theory is employed to generate chaotic features. Each video is then represented by a feature vector matrix. Third, the mean shift clustering algorithm is used to cluster the feature vectors. Finally, the earth mover's distance (EMD) is employed to obtain a distance matrix by comparing the similarity based on the segmentation results. The distance matrix is transformed into a matching matrix, which is evaluated in the classification task. Experimental results show good traffic video classification performance, with robustness to environmental conditions, such as occlusions and variable lighting.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1497-1500
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• 2006

Inkjet printing technology can reduce the LCD color filter manufacturing cost more than 50 %. Uniform color filter patterning can be achieved only with proper ink and barrier materials. We developed new ink and black matrix materials for inkjet color filter. The ink materials have low volatility while they have very high solid content. The black matrix materials have very precisely controlled surface energy so that the inks can fill the pixels evenly and completely. We controlled the ink drop volume and ink material to minimize the thickness difference between the black matrix and the color pixel. Micron-order jetting position accuracy was achieved. We successfully printed 14.1" color filters using our ink and black matrix materials.

• Korean Journal of Mathematics
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• v.14 no.1
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• pp.47-55
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• 2006

This paper presents an image analysis technique using connected components by applying SPA (shortest path algorithm) from graph theory. Software implementation of Floyd-Warshall transitive matrix labelling method is discussed. Results are also presented.

• Journal of Korea Multimedia Society
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• v.4 no.2
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• pp.136-144
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• 2001

visual cryptography is a simple method in which secret information can be directly decoded in human visual system without any cryptographic computations. This scheme is a kind of secret sharing scheme in which secret of image type is distributed to n random image(we call it share). When the secret image is distributed to n shares, the original pixel is expanded as much as the size of column in basis matrix. It causes the deterioration of contrast in docoded secret image. Therefore, many researches have performed to reduce the size of pixel expansion and to improve the contrast by overlapping the row in basis matrix for (k, n) visual cryptography. In addition, we show that the proposed method can construct the (k, n) visual cryptography with multiple contrasts depending on selecting k out of n slides in a group.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.112-116
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• 2007

We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.95-96
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• 2008

A new voltage-driven pixel circuit using soluble-processed organic thin film transistors (OTFTs) for an active matrix organic light emitting diode (AMOLED) is proposed. The proposed circuit is composed of four switching TFTs, one driving TFT and one storage capacitor. The proposed circuit can compensate for the degradation of OLED current caused by the threshold voltage shift of the OTFT. The simulation results show that the variation of OLED current corresponding to a 3V threshold voltage shift is decreased by 30% compared to the conventional 2TlC structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.8-15
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• 2007

In this paper, we fabricated the field emitter display using oxidized porous polysilicon(OPPS). Their field emission characteristics and the brightness were investigated for each pixel. The OPPS emitter was operated to each pixel using passive matrix for application of large panel display. We set up the proper thickness and width of upper electrode. The fine structure of OPPS was analyzed and the field emission characteristics of each pixel were investigated. As a result of field emission characteristics of different upper electrode thickness and width, we confirmed that the most efficient thickness was 2nm/7nm and increased the emission efficiency over the width of 2.5 mm. Even if field emission characteristics of each pixel was a little different but we confirmed the same leakage current and emission current, emission efficiency at each pixel. The leakage current and emission current was decreased according to the time increases but all of each pixel were uniformly decreased. We confirmed that the brightness of each pixel was not different and the brightness of OPPS field emitter was 700 cd/m2 at the Vps=20 V. Accordingly, the patterned OPPS field emitter can be applied to high quality field emission display devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.403-408
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• 2006

We have developed a four mask LTPS TFT p-channel process and fabricated active matrix backplanes based on a pixel circuit with three TFTs and one storage capacitor. Top emitting AMOLED displays have been produced to prove the working principle of the active matrix.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.227-229
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• 2003

We present a process for printing active matrix displays. In this process, transistors are fabricated using soluble semi-conducting and conducting materials. Accurate definition of the transistor channel and other circuit components is achieved by direct inkjet printing combined with surface energy patterning. We present results on our 4,800 pixel, 50 dpi, active matrix displays.