• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.9
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• pp.1248-1255
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• 2003

Pressure coefficient in a rotating discharge hole was measured to gain insight into the influence of rotation on the discharge characteristics of rotating discharge holes. Pressures inside the hole were measured by a telemetry system that had been developed by the authors. The telemetry system is characterized by the diversity of applicable sensor type. In the present study, the telemetry system was modified to measure static pressure using piezoresistive pressure sensors. The pressure sensor is affected by centrifugal force and change of orientation relative to the gravity. The orientation of sensor installation for minimum rotating effect and zero gravity effect was found out from the test. Pressure coefficients in a rotating discharge hole were measured in longitudinal direction as well as circumferential direction at various rotating speeds and three different pressure ratios. From the results, the behaviors of pressure coefficient that cannot be observed by a non-rotating setup were presented. It was also shown that the discharge characteristics of rotating discharge hole is much more influenced by the Rotation number irrespective of pressure ratio.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.173-178
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• 2024

Development of pressure sensors for harsh environments with high pressure, humidity, and temperature is essential for many applications in the aerospace, marine, and automobile industries. However, existing materials such as polymers, adhesives, and semiconductors are not suitable for these conditions and require materials that are less sensitive to the external environment. This study proposed a pressure sensor that could withstand harsh environments and had high durability and precision. The sensor comprised a piezoresistor pattern and an insulating film directly formed on a stainless-steel membrane. To achieve the highest sensitivity, a pattern design method was proposed that considered the stress distribution in a circular membrane using finite element analysis. The manufacturing process involved depositing and etching a dielectric insulating film and metal piezoresistive material, resulting in a device with high linearity and slight hysteresis in the range of a maximum of 40 atm. The simplicity and effectiveness of this sensor render it a promising candidate for various applications in extreme environments.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1529-1531
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• 2003

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, piezocapastive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. The screen printing technique has been used to fabricate the pressure sensors on alumina substrate($Al_2O_3$). Thick film capacitive of strain sensing characteristics are reported and dielectric paste based on (Ti+Ba) materials. The electric property of dielectric paste has been studied and exhibit good properly with good gage factor comparable to piezoresistive strain gage. New piezocapacitive strain sensor was designed and tested. The output of capacitive value was good characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.19-24
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• 2005

In this paper, the fabrication process of Si pressure sensors utilizing piezoresistive effect was optimized. The efficiency(yield) of the fabrication process for Si piezoresistive pressure sensors was improved by conducting Si anisotrophic etching process after processes of piezoresistors and AI circuit patterns. The position and process parameters for piezoresistors were determined by ANSYS and SUPREM simulators, respectively. The measured thickness of p-type Si piezoresistors from the boron depth-profile measurement was in good agreement with the simulated one from SUPREM simulation. The Si anisotrohic etching process for diaphragm was optimized by adding ammonium persulfate(AP) to tetramethyl ammonium hydroxide (TMAH) solution.

• Journal of Mechanical Science and Technology
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• v.20 no.4
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• pp.505-512
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• 2006

This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.4
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• pp.417-424
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• 2007

This paper reports fabrication and characterization of a pressure sensor using a pitch-based carbon fiber. Pitch-based carbon fibers have been shown to exhibit the piezoresistive effect, in which the electric resistance of the carbon fiber changes under mechanical deformation. The main structure of pressure sensors was built by performing backside etching on a SOI wafer and creating a suspended square membrane on the front side. An AC electric field which causes dielectrophoresis was used for the alignment and deposition of a carbon fiber across the microscale gap between two electrodes on the membrane. The fabricated pressure sensors were tested by applying static pressure to the membrane and measuring the resistance change of the carbon fiber. The resistance change of carbon fibers clearly shows linear response to the applied pressure and the calculated sensitivities of pressure sensors are $0.25{\sim}0.35 and 61.8 ${\Omega}/k{\Omega}{\cdot}bar$ for thicker and thinner membrane, respectively. All these observations demonstrated the possibilities of carbon fiber-based pressure sensors.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.126-131
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• 2007

In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1978.1_1979.1
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• 2009

In this paper, we have proposed and demonstrated a tonometry sensor array for measuring arterial pulse pressure. A sensor module consists of 7 piezoresistive pressure sensor array. Wire-bonded connection was provided between silicon chip and lead frame. PDMS(poly-dimethylsiloxane) was coated on the sensor array to protect fragile sensor while faithfully transmitting the pressure of radial artery to the sensor. Tonometric pulse pressure can be measured by this packaged sensor array that provides the pressure value versus the output voltage.

• Journal of Sensor Science and Technology
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• v.19 no.2
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• pp.137-141
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• 2010

In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.7-12
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• 2006

The multi-functional one-chip sensor has been fabricated to reduce output variation under various water environment. There were a temperature sensor, a piezoresistive type pressure sensor, and a electrode type conductivity sensor in the fabricated one-chip sensor. This sensor was measured water depth in the range of $0{\sim}180cm$, temperature in the range of $0{\sim}50^{\circ}C$, and salinity in the range of 0 $0wt%{\sim}5wt%$, respectively. Since the change of water depth in solution environment depends on various factors such as salinity, latitude, temperature, and atmospheric pressure, the water depth sensor is needed to be compensated. We tried to compensate the salinity and temperature dependence for the pressure in water by using lookup-table method.