센서학회지 (Journal of Sensor Science and Technology)

  • 제16권2호
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  • Pages.126-131
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  • 2007
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  • 1225-5475(pISSN)
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  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
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ICP-RIE를 이용한 저압용 실리콘 압력센서 제작

Fabrication of a silicon pressure sensor for measuring low pressure using ICP-RIE

  • 발행 : 2007.03.31
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초록

In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.

키워드

참고문헌

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피인용 문헌

  1. Development of a Contact Type Temperature Sensor Using Single Crystal Silicon Thermopile vol.22, pp.5, 2013, https://doi.org/10.5369/JSST.2013.22.5.369