• 센서학회지
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• 제21권2호
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• pp.121-126
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• 2012

Piezoresistive type contact force sensor array is fabricated by (111) Silicon bulk micromachining for continuous blood pressure monitoring. Length and width of the unit sensor structure is $200{\mu}m$ and $190{\mu}m$, respectively. The gap between sensing elements is only $10{\mu}m$. To achieve wafer level packaging, the sensor structure is capped by PDMS soft cap using wafer molding and bonding process with $10{\mu}m$ alignment precision. The resistance change over contact force was measured to verify the feasibility of the proposed sensor scheme. The maximum measurement range and resolution is 900 mm Hg and 0.57 mm Hg, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.416-418
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• 1994

In this study, a silicon piezoresistive accelerometer is designed and fabricated using $p^+$ etch stop layer. The accelerometer consists of a seismic mass and tour cantilevers, and is fabricated mainly by the anisotropic etching method using EPW as an etchant. Eight piezoresistors are properly arranged and connected to make a bridge circuit so that acceleration in only one direction may be measured. The etch stop method is adequate to the mass-production and the precise thickness control of the diaphragms as well, whet compared with the electrochemecal etch stop method.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.637-640
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• 2005

In this paper, we investigate the characteristics of a piezoresistive AFM cantilever in the range of $0\~30{\mu}N$ by using nano force calibrator (NFC), which consists of a high precision balance with resolution of 1 nN and 1-D fine positioning stage. Brief modeling of the cantilever is presented and then, the calibration results are shown. Tests revealed a linear relationship between the probing force and sensor output (resistance change), and the force vs. deflection. From this relationship, the force constant of the cantilever was calculated to 3.45 N/m with a standard deviation of 0.01 N/m. It shows that there is a big difference between measured and nominal spring constant of 1 N/m provided by the manufacturer s specifications.

• 대한기계학회논문집A
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• 제20권2호
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• pp.408-413
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• 1996

A self-diagnostic, air-damped, piezoresitive, cantilever-beam microaccelerometer has been designed, fabricated and tested for applications to automotive electronic airbag systems. A skew-symmetric proof-mass has been designed for self-diagnostic capability and zero transverse sensitivity. Two kinds of multi-step anisotropic etching processes are developed for beam thickness control and fillet-rounding formation, UV-curing paste has been used for sillicon-to-glass bounding. The resonant frequency of 2.07kHz has been measured from the fabricated devices. The sensitivity of 195 $\mu{V}$/g is obtained with a nonlinearity of 4% over $\pm$50g ranges. Flat amplitude response and frequency-proportional phase response have been obserbed, It is shown that the design and fabricaiton methods developed in the present study yield a simple, practical and effective mean for improving the performance, reliability as well as the reproducibility of the accelerometers.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.78-88
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• 2017

Cantilever beam MEMS piezoelectric accelerometers are the simplest and most widely used accelerometer structure. This paper discusses the design of a piezoelectric accelerometer exclusively for SHM applications. While such accelerometers need to operate at a lower frequency range, they also need to possess high sensitivity and low noise floor. The availability of a simple model for deflection, charge, and voltage sensitivities will make the accelerometer design procedure less cumbersome. However, a review of the open literature suggests that such a model has not yet been proposed. In addition, previous works either depended on FEM analysis or only reported on the fabrication and characterization of piezoelectric accelerometers. Hence, this paper presents, for the first time, a simple analytical model developed for the deflection, induced voltage, and charge sensitivity of a cantilever beam piezoelectric accelerometer.The model is then verified using FEM analysis for a range of different cases. Further, the model was validated by comparing the induced voltages of an accelerometer estimated using this model with experimental voltages measured in the accelerometer after fabrication. Subsequently, the design of an accelerometer is demonstrated for SHM applications using the analytical model developed in this work. The designed accelerometer has 60 mV/g voltage sensitivity and 2.4 pC/g charge sensitivity, which are relatively high values compared to those of the piezoresistive and capacitive accelerometers for SHM applications reported earlier.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.59-62
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• 2005

Small force measurements ranging from 1 pN to $100{\mu}N$, we call it Nano Force, become the questions of common interests of biomechanics, nanomechanics, material researches, and so on. However, unfortunately, quantitative and accurate force measurements have not been taken so far. This is because there ,are no traceable force standards and a calibration scheme. This paper introduces a quantitative force metrology, which provides traceable link to SI (International Systems of Units). We realize SI traceable force ranging from 1 nN to $100{\mu}N$ using an electrostatic balance and disseminate it through transfer standards, which are self-sensing cantilevers that have integrated piezoresistive strain gages. We have been built a prototype electrostatic balance and Nano Force Calibrator (NFC), which is an AFM cantilever calibration system. As a first experiment, we calibrated normal spring constants of commercial AFM cantilevers using NFC. Calibration results show that the spring constants of them are quite differ from each other and nominal values provided by a manufacturer (up to 240% deviation).

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1381-1384
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• 2005

In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the distribution of the resistance change ratio on the diaphragm and bridge surface where piezoresistor would be formed, and proposed the proper size and position of piezoresistor with which the sensitivity of sensor was increased. As the width of mass and boss was increased, the distance between piezoresistors was closed and the maximum value of resistance change ratio was decreased by the increase of the structure stiffness. And according to the increment of seismic mass size, the value of resistance change ratio is decreased by increase of the structure stiffness. Y directional piezoresistor is formed in the position of $100\mu{m}\;apart\;from\;cantilever\;edge\;and\;length\;of\;that\;is\;800\mu{m}$.

• 센서학회지
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• 제1권2호
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• pp.131-145
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• 1992

본 논문은 SOI트랜스듀서 및 회로를 위해, Si 직접접합과 M-C국부연마법에 의한 박막SOI구조의 형성 공정을 기술한다. 또한, 이러한 박막SOI의 전기적 및 압저항효과 특성들을 SOI MOSFET와 cantilever빔으로 각각 조사했으며, bulk Si에 상당한다는 것이 확인되었다. 한편, SOI구조를 이용한 두 종류의 압력트랜스듀서를 제작 및 평가했다. SOI구조의 절연층을 압저항의 유전체분리층으로 이용한 압력트랜스듀서의 경우, $-20^{\circ}C$에서 $350^{\circ}C$의 온도범위에 있어서 감도 및 offset전압의 변화는 자각 -0.2% 및 +0.15%이하였다. 한편, 절연층을 etch-stop막으로 이용한 압력트랜스듀서에 있어서의 감도변화를 ${\pm}2.3%$의 표준편차 이내로 제어할 수 있다. 이러한 결과들로부터 개발된 SDB공정으로 제작된 SOI구조는 집적화마이크로트랜스듀서 및 회로개발에 많은 장점을 제공할 것이다.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.215-220
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• 2012

Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.289-290
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• 2006

In general, atomic force microscope (AFM) used for metrological purpose has measuring range less than a few hundred micrometers. We design and fabricate an AFM with long measuring range of $200mm{\times}200mm$ in X and Y axes. The whole stage system is composed of surface plate, global stage, microstage. By combining global stage and microstage, the fine and long movement can be provided. We measure the position of the stage and angular motions of the stage by laser interferometer. A piezoresistive type cantilever is used for compact and long term stability and a flexure structure with PZT and capacitive sensor is used for Z axis feedback control. Since the system is composed of various actuators and sensors, a real time control program is required for the implementation of AFM. Therefore, in this work, we designed a multi-axis control program using a FPGA module, which has various functions such as interferometer signal converting, PID control and data acquisition with triggering. The control program achieves a loop rate more than 500 kHz and will be applied for the measurement of grating pitch and step height.