• 제목/요약/키워드: physical memory

검색결과 472건 처리시간 0.024초

Implementation and characterization of flash-based hardware security primitives for cryptographic key generation

  • Mi-Kyung Oh;Sangjae Lee;Yousung Kang;Dooho Choi
    • ETRI Journal
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    • 제45권2호
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    • pp.346-357
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    • 2023
  • Hardware security primitives, also known as physical unclonable functions (PUFs), perform innovative roles to extract the randomness unique to specific hardware. This paper proposes a novel hardware security primitive using a commercial off-the-shelf flash memory chip that is an intrinsic part of most commercial Internet of Things (IoT) devices. First, we define a hardware security source model to describe a hardware-based fixed random bit generator for use in security applications, such as cryptographic key generation. Then, we propose a hardware security primitive with flash memory by exploiting the variability of tunneling electrons in the floating gate. In accordance with the requirements for robustness against the environment, timing variations, and random errors, we developed an adaptive extraction algorithm for the flash PUF. Experimental results show that the proposed flash PUF successfully generates a fixed random response, where the uniqueness is 49.1%, steadiness is 3.8%, uniformity is 50.2%, and min-entropy per bit is 0.87. Thus, our approach can be applied to security applications with reliability and satisfy high-entropy requirements, such as cryptographic key generation for IoT devices.

A novel model of a nonlocal porous thermoelastic solid with temperature-dependent properties using an eigenvalue approach

  • Samia M. Said
    • Geomechanics and Engineering
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    • 제32권2호
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    • pp.137-144
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    • 2023
  • The current article studied wave propagation in a nonlocal porous thermoelastic half-space with temperature-dependent properties. The problem is solved in the context of the Green-Lindsay theory (G-L) and the Lord- Shulman theory (L-S) based on thermoelasticity with memory-dependent derivatives. The governing equations of the porous thermoelastic solid are solved using normal mode analysis with an eigenvalue approach. In order to illustrate the analytical developments, the numerical solution is carried out, and the effect of local parameter and temperature-dependent properties on the physical fields are presented graphically.

비정질 $As_{10}Ge_{15}Te_{75}$박막의 D.C. 스위칭 임계전압 특성 (The characteristics of D.C. switching threshold voltage for amorphous $As_{10}Ge_{15}Te_{75}$ thin film)

  • 이병석;이현용;이영종;정홍배
    • E2M - 전기 전자와 첨단 소재
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    • 제9권8호
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    • pp.813-818
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    • 1996
  • Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

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낸드 플래시 메모리 상에서 쓰기 패턴 변환을 통한 효율적인 B-트리 관리 (Efficiently Managing the B-tree using Write Pattern Conversion on NAND Flash Memory)

  • 박동주;최해기
    • 한국정보과학회논문지:시스템및이론
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    • 제36권6호
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    • pp.521-531
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    • 2009
  • 플래시 메모리는 하드디스크와 다른 물리적 특성을 가진다. 대표적으로 읽기연산과 쓰기연산의 비용이 다르고, 덮어쓰기(overwrite)가 불가능하여 소거연산(erase)이 선행되어야 한다. 이러한 물리적 제약을 소프트웨어적으로 보완해주기 위해서, 플래시 메모리를 사용하는 시스템은 대부분 플래시 변환 계층(Flash Translation Layer)을 사용한다. 현재까지 효율적인 FTL 기법들이 제안되었으며, 이들은 임의쓰기(random writes) 패턴보다 순차쓰기(sequential writes) 패턴에 훨씬 더 효율적으로 동작한단. 본 논문에서는 플래시 메모리 상에서 B-트리 인덱스를 효율적으로 생성, 유지하기 위한 새로운 기법을 제안한다. B-트리에 키의 삽입, 삭제, 수정 등치 연산을 수행하면 FTL에 비효율적인 임의쓰기 패턴을 많이 발생시키며, 결국 B-트리 인덱스 유지 비용이 커지게 된다. 제안하는 기법에서는 B-트리에서 발생되는 임의쓰기 패턴을 먼저 플래시 메모리의 쓰기 버퍼에 추가쓰기(append writes) 패턴으로 변환하여 저장하고, 추후 이를 FTL에 효율적인 순차쓰기 패턴으로 FTL에 전달한다. 다양한 실험을 통해 제안하는 기법이 기존의 기법보다 플래시 메모리 I/O 비용 측면에서 우수하다는 것을 보인다.

Fabrication of resistive switching memory by using MoS2 layers grown by chemical vapor deposition

  • Park, Sung Jae;Qiu, Dongri;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.298.1-298.1
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    • 2016
  • Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

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페이지 삭제정보를 활용하는 플래시 저장장치의 구조 (The Architecture of the Flash Memory Storage System using Page Delete Information)

  • 정호영;박성민;강수용;차재혁
    • 한국정보과학회논문지:컴퓨팅의 실제 및 레터
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    • 제15권12호
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    • pp.958-962
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    • 2009
  • 최근 저장장치로 하드 디스크를 대치하고 있는 플래시 메모리 저장장치는 물리적 특성이 하드디스크와 다르다. 이러한 플래시 메모리 저장장치의 성능을 향상시키기 위해 운영체제 및 파일시스템의 여러 계층에 걸쳐 다양한 연구가 진행되고 있다. 본 연구에서는 파일 삭제시 무효화되는 페이지 정보를 상위 계층에서 전달받아 이를 저장하고 활용하는 플래시 메모리 저장장치의 구조를 제안하고 해당 시스템의 성능 및 영향에 대해 연구하였다. 제안하는 시스템은 페이지 무효 정보를 블록 병합, 웨어 레벨링 등에 활용하고 이에 따라 시스템의 성능을 효과적으로 향상시키는 것으로 나타났다.

플래시 메모리를 위한 효율적인 사상 알고리즘 (An Efficient FTL Algorithm for Flash Memory)

  • 정태선;박형석
    • 한국정보과학회논문지:시스템및이론
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    • 제32권9호
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    • pp.483-490
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    • 2005
  • 플래시 메모리는 비 휘발성(non-volatility), 빠른 접근 속도, 저전력 소비, 그리고 간편한 휴대성 등의 장점을 가지므로 최근에 많은 임베디드 시스템에서 많이 사용되고 있다 그런데 플래시 메모리는 그 하드웨어 특성상 플래시 변환 계층(FTL. flash translation layer)이라는 시스템 소프트웨어를 필요로 한다. 이 FTL의 주요 기능은 파일 시스템으로부터 내려오는 논리 주소를 플래시 메모리의 물리 주소로 변환하는 일이다. 본 논문에서는 STAFF(State Transition Applied Fast Flash Translation Layer)라 불리는 FTL 알고리즘을 제안한다. 기존의 FTL 알고리즘에 비하여 STAFF는 적은 메모리를 필요로 하면서 기존 일반 방법인 블록 사상 방법에 비하여 5배 정도 좋은 성능을 보인다. 본 논문에서는 기존 FTL 알고리즘과 STAFF의 성능 비교를 보였다.

The adverse impact of personal protective equipment on firefighters' cognitive functioning

  • Park, Juyeon
    • 복식문화연구
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    • 제27권1호
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    • pp.1-10
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    • 2019
  • Firefighters wear Personal Protective Equipment (PPE) for protection from environmental hazards. However, due to the layers of protective functions, the PPE inevitably adds excessive weight, bulkiness, and thermal stress to firefighters. This study investigated the adverse impact of wearing PPE as an occupational stressor on the firefighter's cognitive functioning. Twenty-three firefighters who had been involved in firefighting at least for 1 year were recruited. The overall changing trend in the firefighter's cognitive functioning (short-term memory, long-term memory, and inductive reasoning) was measured by the scores of three standardized cognitive tests at the baseline and the follow-up, after participating in a moderate-intensity physical activity, wearing a full ensemble of the PPE. The study findings evinced the negative impact of the PPE on the firefighter's cognitive functioning, especially in short-term memory and inductive reasoning. No significant influence was found on the firefighter's long-term memory. The results were consistent when the participant's age and BMI were controlled. The outcomes of the present study will not only fill the gap in the literature, but also provide critical justification to stakeholders, including governments, policymakers, academic communities, and industry, for such efforts to improve human factors of the firefighter's PPE by realizing the negative consequences of the added layers and protective functions on their occupational safety. Study limitations and future directions were also discussed.

Actoprotective effect of ginseng: improving mental and physical performance

  • Oliynyk, Sergiy;Oh, Seikwan
    • Journal of Ginseng Research
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    • 제37권2호
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    • pp.144-166
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    • 2013
  • Actoprotectors are preparations that increase the mental performance and enhance body stability against physical loads without increasing oxygen consumption. Actoprotectors are regarded as a subclass of adaptogens that hold a significant capacity to increase physical performance. The focus of this article is studying adaptogen herbs of genus Panax (P. ginseng in particular) and their capabilities as actoprotectors. Some animal experiments and human studies about actoprotective properties of genus Panax attest that P. ginseng (administered as an extract) significantly increased the physical and intellectual work capacities, and the data provided suggests that ginseng is a natural source of actoprotectors. Preparations of ginseng can be regarded as potential actoprotectors which give way to further research of its influence on physical and mental work capacity, endurance and restoration after exhaustive physical loads while compared with reference actoprotectors.