• Electronics and Telecommunications Trends
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• v.35 no.4
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• pp.21-33
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• 2020

Single photon detector technologies have emerged as powerful tools in optical quantum information applications such as quantum communication, quantum information, and integrated quantum photonics. Owing to significant attempts in the previous decade at improving photon-counting detectors, several single photon detectors with high efficiency and low noise have been realized within the optical wavelength regime. In this paper, we provide an overview of current studies on single photon detectors operating at wavelengths from the ultraviolet to the infrared. In addition, we discuss applications of single photon detector technologies in quantum communication and integrated quantum photonics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.322-329
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Korean Journal of Remote Sensing
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• v.30 no.2
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• pp.251-258
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• 2014

We upgraded to utilize a novel method for combining the analog to digital converter and photon-counting measurements for backscatter photon signal of lidar. We have and improve the standard combining method for determination of those conversion factors between analog to digital converter data and photon-counting data measurement which is conducted dead time correction. The combining method and dead time correction method presented here has been successfully applied to experimental data obtained in Gwangju, Korea.

• Progress in Superconductivity and Cryogenics
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• v.19 no.4
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• pp.22-25
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• 2017

Superconducting nanowire single photon detectors (SNSPD) have become the most competent photon-counting devices in wide range of wavelengths. Especially in the communication wavelength (infrared), SNSPD has shown unbeatable superior performance compared to the state-of-art semiconductor single photon detectors. The technology has matured enough for the last decade so that several commercial systems are now almost ready for routine use in general optics experiments. Here we summarize briefly the recent progress in this research field, and hope to motivate further research on the improvement of the device and the system. We cover the basic key concepts, device and system performances, remaining issues and possible further research directions of SNSPD.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.429-435
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• 1997

The third order nonlinear optical susceptibilities, {{{{ chi }}(3), of the CuCl doped alumino-borosilicate glasses were measured by the two beam configuration DFWM method and the absorption saturation method, and the measured {{{{ chi }}(3) values were about 10-8 esu in both methods. The response time was estimated to be about 105ps from the time decay curve of the luminescence spectra obtained by time-correlated single-photon counting (TCSPC) method.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.90-99
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• 1994

Picosecond time-correlated single photon counting system and time-resolved luminescence spectrometer were constructed, employing a mode-locked picosecond laser, fast electronics, and microchannel plate tube. It has been shown that the instrument response function critically depends on laser pulse shape, timing jitter and walk of the electronics, and characteristics of detector and amplifier. Correcting time dispersion in the optical system, the best instrument response function obtained appears to be 25 ps, which made it possible to measure the luminescence lifetime with less than 10 ps resolution in the picosecond to microsecond range. range.

• Journal of the Korean Society of Radiology
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• v.9 no.7
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• pp.439-443
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• 2015

An electrical signals of a conventional radiation medical imaging sensor are obtained by charge integration method. In this study, the polycrystalline cadmium telluride(p-CdTe) film was fabricated by a thermal evaporation method for the photon counting sensor development with excellent resolution in low exposure dose. From the fabricated p-CdTe sensor, the physical properties(SEM, XRD) and the electrical properties(leakage current, x-ray sensitivity, SNR) were evaluated. As a result, the leakage current of below $5nA/cm^2$ and $7{\mu}C/cm^2-R$ of the X-ray sensitivity were showed in below $1V/{\mu}m$. In addition, the signal to noise ratio showed the values of above 5000 at operating voltage.

• Progress in Medical Physics
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• v.27 no.3
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• pp.105-110
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• 2016

Sparse angular sampling has been studied recently owing to its potential to decrease the radiation exposure from computed tomography (CT). In this study, we investigated the analytic reconstruction algorithm in sparse angular sampling using the sinogram interpolation method for improving image quality and computation speed. A prototype of the spectral CT system, which has a 64-pixel Cadmium Zinc Telluride (CZT)-based photon-counting detector, was used. The source-to-detector distance and the source-to-center of rotation distance were 1,200 and 1,015 mm, respectively. Two energy bins (23~33 keV and 34~44 keV) were set to obtain two reconstruction images. We used a PMMA phantom with height and radius of 50.0 mm and 17.5 mm, respectively. The phantom contained iodine, gadolinium, calcification, and lipid. The Feld-kamp-Davis-Kress (FDK) with the sinogram interpolation method and Maximum Likelihood Expectation Maximization (MLEM) algorithm were used to reconstruct the images. We evaluated the signal-to-noise ratio (SNR) of the materials. The SNRs of iodine, calcification, and liquid lipid were increased by 167.03%, 157.93%, and 41.77%, respectively, with the 23~33 keV energy bin using the sinogram interpolation method. The SNRs of iodine, calcification, and liquid state lipid were also increased by 107.01%, 13.58%, and 27.39%, respectively, with the 34~44 keV energy bin using the sinogram interpolation method. Although the FDK algorithm with the sinogram interpolation did not produce better results than the MLEM algorithm, it did result in comparable image quality to that of the MLEM algorithm. We believe that the sinogram interpolation method can be applied in various reconstruction studies using the analytic reconstruction algorithm. Therefore, the sinogram interpolation method can improve the image quality in sparse-angular sampling and be applied to CT applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.32-32
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• 2008

X-ray detector는 의료용, 산업용 등 다양한 분야에서 사용되어지고 있으며 기존의 Analog X-ray 방식의 환경오염, 저장공간 부족, 실시간 분석의 어려움 등의 문제점들을 해결하기 위하여 Digital X-ray로의 전환과 연구가 활발하며 이에 따른 관심도 높아지고 있는 살점이다. Digital X-ray detector는 p-영역과 n-영역 사이에 아무런 불순물을 도핑하지 않은 진성반도체(intrinsic semiconductor) 층을 접합시킨 이종접합 PIN 구조의 photodiode 이다. 이 소자는 역바이어스를 가해주면 p영역과 n영역 사이에서 캐리어 (carrier)가 존재하지 않는 공핍 영역이 발생하게 된다. 이런 공핍 영역에서 광흡수가 일어나면, 전자-정공 쌍이 발생한다. 그리고, 발생한 전자-정공 쌍에 전압이 역방향으로 인가되는 경우, 전자는 양의 전극으로 이동하고, 정공은 음의 전극으로 이동한다. 이와 같이, 발생한 캐리어들을 검출하여 전기적인 신호로 변환 시킨다. 고해상도의 Digital X-ray detector를 만들기 위해서는 누설전류에 의한 noise 감소와 소자의 높은 안정성과 내구성을 위한 높은 breakdown voltage를 가져야 한다. 본 연구에서는 Digital X-ray detector의 leakage current 감소와 breakdown voltage를 높이기 위하여 guradring과 gettering technology를 사용하여 전기적 특성을 분석하였다. 기판으로는 $10k\Omega{\cdot}cm$ resistivity를 갖으며, n-type <111>인 1mm 두께의 4인치 Si wafer를 사용하였다. 그리고 pixel pitch는 $100{\mu}m$이며 active area는 $80{\mu}m{\times}80{\mu}m$인 $32\times32$ array를 형성하여 X-ray를 조사하여 소자의 특성을 평가 하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.330-336
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.