• Journal of Powder Materials
• /
• v.22 no.2
• /
• pp.116-121
• /
• 2015

$WS_2$-W-WC embedded carbon nanofiber composites were fabricated by using electrospinning method for use in high-performance supercapacitors. In order to obtain optimum electrochemical properties for supercapacitors, $WS_2$ nanoparticles were used as precursors and the amounts of $WS_2$ precursors were controlled to 4 wt% (sample A) and 8 wt% (sample B). The morphological, structural, and chemical properties of all samples were investigated by means of field emission photoelectron spectroscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. These results demonstrated that the embedded phases of samples A and B were changed from $WS_2$ to $WS_2$-W-WC through carbothermal reaction during carbonization process. In particular, sample B presented high specific capacitance (~119.7 F/g at 5 mV/s), good high-rate capacitance (~60.5%), and superb cycleability. The enhanced electrochemical properties of sample B were explained by the synergistic effect of the using 1-D structure supports, increase of specific surface area, and improved conductivity from formation of W and WC phases.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.3
• /
• pp.116-119
• /
• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Applied Science and Convergence Technology
• /
• v.23 no.6
• /
• pp.317-327
• /
• 2014

In order to develop nano-devices with much lower power consumption for beyond-CMOS applications, the fundamental understanding and precise control of the electronic properties of ultrathin transition metal oxide (TMO) films are strongly required. The metal-insulator transition (MIT) is not only an important issue in solid state physics, but also a useful phenomenon for device applications like switching or memory devices. For potential use in such application, the electronic structures of MIT, observed for TMO nano-structures, have been investigated using a synchrotron radiation angle-resolved photoelectron spectroscopy system combined with a laser molecular beam epitaxy chamber and a scanning photoelectron microscopy system with 70 nm spatial resolution. In this review article, electronic structures revealed by soft X-ray nano-spectroscopy are presented for i) polarity-dependent MIT and thickness-dependent MIT of TMO ultrathin films of $LaAlO_3/SrTiO_3$ and $SrVO_3/SrTiO_3$, respectively, and ii) electric field-induced MIT of TMO nano-structures showing resistance switching behaviors due to interfacial redox reactions and/or filamentary path formation. These electronic structures have been successfully correlated with the electrical properties of nano-structured films and nano-devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.70-70
• /
• 2010

Cerium oxide nanofibers have been of great interest in fundamental level study. We fabricated polyvinylpyrollidone (PVP) and cerium nitrate nanofibers composite applying a mixed solution of PVP and cerium nitrate hydrate (Ce(NO3)3) with various cerium concentration from 8.87 to 35.5wt% by electrospinning process. Electrospinning method is a simple and cost-effective process to make nanoand submicro nanofiber fabrication. We applied 0.69 kV/cm of electric field between the capillary and a drum collector covered with aluminum foil. Cerium oxide nanofibers were obtained after calcination of PVP/Ce(NO3)3 nanofibers composite at 573, 873 and 1273K, which were chosen by thermal gravimetry analysis. The obtained nanofibers were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS). When the viscosity of the electrospinning solution was high named over 60 cP, only nano and submicro-sized cerium oxide fibers were collected. X-ray photoelectron spectroscopy (XPS) was performed for investigation of the chemical nature of the obtained ceria nanofibers. After we calcined the PVP/ceria nanocomposites, metallic cerium was oxidized to cerium oxide including ceria.

• Journal of the Korean Society for Heat Treatment
• /
• v.14 no.5
• /
• pp.292-296
• /
• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Journal of the Korean Vacuum Society
• /
• v.17 no.5
• /
• pp.394-399
• /
• 2008

Growth and electronic structure of pentacene film on silicon oxide before and after octadecyltrichlorosilane (OTS) treatment have been studied by photoelectron spectroscopy and photoelectron emission microscopy. On the OTS-treated surface, due to the weak interaction between the substrate and pentacene, the diffusion of pentacene is enhanced and domain size gradually grows, leading to a gradual change of the HOMO offset position. On the bare silicon oxide, the change of the HOMO position is marginal because of relatively strong interaction between the substrate and pentacene from the beginning.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.5
• /
• pp.211-215
• /
• 2001

SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.

• Journal of the Korean Vacuum Society
• /
• v.7 no.2
• /
• pp.112-117
• /
• 1998

TiN has been investigated as a good candidate for a diffusion barrier of Cu. Therefore, in this study, the grain boundary diffusion of Cu in TiN film was investigated by X-ray photoelectron spectroscopy(XPS). In general, TiN has a columnar grain structure. In the relatively lower temperature, less than 1/3 of the melting point, it was observed that Cu diffused into TiN mainly along the grain boundaries of TiN. The grain size of TiN was measured by atomic force microscope (AFM). In order to estimate the grain boundary diffusion constants, we used the modified surface accumulation method. The activation energy, $Q_b$ was 0.23 eV, and the diffusivity, $D_{bo}$ was $5.5\times10^{-12{\textrm{cm}^2$/sec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.5
• /
• pp.321-326
• /
• 2021

We fabricated BiAlO thin film by a solution process with a brush coating to be used as liquid crystal (LC) alignment layer. Solution-processed BiAlO was coated on the glass substrate by brush process. Prepared thin films were annealed at different temperatures of 80℃, 180℃, and 280℃. To verify whether the BiAlO film was formed properly, X-ray photoelectron spectroscopy analysis was performed on Bi and Al. Using a crystal rotation method by polarized optical microscopy, LC alignment state was evaluated. At the annealing temperature of 280℃, the uniform homogenous LC alignment was achieved. To reveal the mechanism of LC alignment by brush coating, field emission scanning electron microscope was used. Through this analysis, spin-coated and brush coated film surface were compared. It was revealed that physical anisotropy was induced by brush coating at a high annealing temperature. Particles were aligned in one direction along which brush coating was made, resulting in a physical anisotropy that affects a uniform LC alignment. Therefore, it was confirmed that brush coating combined with BiAlO thin film annealed at high temperature has a significant potential for LC alignment.

• Nuclear Engineering and Technology
• /
• v.55 no.9
• /
• pp.3121-3125
• /
• 2023

Neutron conversion detectors that use ¹⁰B-enriched boron carbide are feasible alternatives to ³He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B₄C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the ¹⁰B-enriched B₄C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.