• Journal of Magnetics
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• v.15 no.4
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• pp.169-172
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• 2010

The coercivity mechanism in permanent magnets was analyzed according to the effects of domain nucleation and domain wall pinning. The coercivity mechanism of a TbCo thin film with high perpendicular magnetic anisotropy was considered in terms of the local inhomogeneity in the thin film. The initial magnetization curves of the TbCo thin films demonstrated domain wall pinning to be the main contributor to the coercivity mechanism than domain nucleation. Based on the coercivity model proposed by Kronmuller et al., the inhomogeneity size acting as a domain wall pinning site was determined. Using the measured values of perpendicular anisotropy constant ($K_u$), saturation magnetization ($M_s$), and coercivity ($H_c$), the inhomogeneity size estimated in a TbCo thin film with high coercivity was approximately 9 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.46-46
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• 1988

Structural and magnetic properties of Co-Cr-Mo films were investigated in connection with sputtering conditions. Films were prepared using a convention RF sputtering system. X-ray diffractometry, scanning electron microscopy and transmission electron microscopy were employed to investigate structure properties. Vibrating sample magnetometry was used for coercivity and saturation magnetization measurements. Co-Cr-Mo films displayed reasonable values of perpendicular coercivity and saturation magnetization for perpendicular recording media and showed good perpendicular orientation of the hcp c-axis to the film surface. Perpendicular coercivity was strongly dependent upon substrate technique showed better c-axis orientation than hose using the stationary substrate. Co-Cr-Mo films of 2.9 at. % Mo content showed maximum perpendicular coercivity and saturation magnetization. The films deposited at lower Ar pressure showed good magnetic properties. There was no explicit relationship between the columnar structure and c-axis orientation. Co-Cr-Mo films was found to have suitable structural and magnetic properties for perpendicular recording media.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.444-450
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• 2000

We prepared Co-Cr thin film for perpendicular magnetic recording media with facing targets sputtering system(FTS system) which can deposit a high quality thin film in plasma-free state and wide range of working pressure. The effect of sputtering conditions(argon gas pressure and substrate temperature) on the magnetic and the crystallographic characteristic of Co-Cr thin film was investigated. And the variation of perpendicular coercivity with the variation of film thickness was studied. As a result we obtained the high perpendicular coercivity of 1900Oe and the good dispersion angle of c-axis($\Delta$$\theta$$_{50}$) of 5$^{\circ}$on the film thickness of 100nm for the promising recording layer of perpendicular magnetic recording media.c recording media.a.

• Journal of the Korean institute of surface engineering
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• v.23 no.3
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• pp.150-159
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• 1990

The magnetic properties of electrodeposited iron and cobalt films on porous aluminum oxide film were examined. There exists perpendicular magnetic anisotropy due to the shape anisotropy. The coercivity and squareness ratio of films were strongly dependent on deposited particle diameter. The effect of packing fraction on squareness ratio was also apprecible. Unlike the iron-deposited films, the magnetic properties of cobalt films were changed by preferred orientation because of it's large crystal ansotropy constant.(about 10 times of Fe) The Fe deposited films were found to be more suitable for perpendicular magenetic recording media bacause perpendicular coercivity, squareness ratio and the ratio of perpendicular coercivity to horizontal ones of iron films are greater than those of cobalt films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.41-47
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• 1993

Effects of Ta addition on Co-Cr pependicular magnetic recording media were studied to obtain high perpen-dicular coercivity at lower substrate temperature. For the purpose. magnetic properties and microstructures of Co-Cr-(Ta) films were studied by varying the Cr contents from 17 to 21 at.% and Ta contents for 0 to 3.2 at.%. Effectiveness of Ta addition in increasing perpendicular coercivity was significant for lower Cr content films. The increasement of perpendicular coercivity was more pronounced for the films deposited on $100^{\circ}C$ heated substrate in the case of ${(Co_{83}Cr_{17})}_{98.4}Ta_{1.6}$ composition. The cause of the increase of perpendicular coercivity was considered due to not the grain refinement effects and the improvement of c-axis alignments but increase of Ta and Cr segregation.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1042-1046
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• 2001

Co-22%Cr alloy films are promising for high-density perpendicular magnetic recording media with their perpendicular anisotropy and large coercivity of 3000 Oe. We observed that a self organized nano structure(SONS) of fine ferromagnetic Co-enriched phase and paramagnetic Cr-enriched phase appears inside the grain of Co-Cr magnetic alloy thin films at the elevated substrate temperature after do-sputtering. We prepared 1000 $\AA$-thick Co-22%Cr films on 2000 $\AA$- SiO$_2$/Si(100) substrates at the deposition rate of 100 $\AA$/min with substrate temperatures of 3$0^{\circ}C$, 10$0^{\circ}C$, 15$0^{\circ}C$, 20$0^{\circ}C$, 30$0^{\circ}C$, and 40$0^{\circ}C$, respectively. We employed a vibrating sample magnetometer(VSM) to measure the B-H loops showing the saturation magnetifation, coercivity, remanence in in- plane and out- of- plane modes. In- plane coercivity, perpendicular coercivity, and perpendicular remanence increased as substrate temperature increased, how-ever they decreased after 30$0^{\circ}C$ slowly. Transmission electron microscope (TEM) characterization revealed that the self organized nano structure (SONS) appears at the elevated substrate temperature, which forms fine Co-enriched phases inside a grain, then it eventually affect the perpendicular magnetic property. Our results imply that we may tune the perpendicular magnetic properties with SONS obtained at appropriate substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.100-103
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• 2001

In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.281-286
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• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta\theta_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 200Oe. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.