• 한국재료학회지
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• 제11권12호
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• pp.1042-1046
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• 2001

Co-22%Cr alloy films are promising for high-density perpendicular magnetic recording media with their perpendicular anisotropy and large coercivity of 3000 Oe. We observed that a self organized nano structure(SONS) of fine ferromagnetic Co-enriched phase and paramagnetic Cr-enriched phase appears inside the grain of Co-Cr magnetic alloy thin films at the elevated substrate temperature after do-sputtering. We prepared 1000 $\AA$-thick Co-22%Cr films on 2000 $\AA$- SiO$_2$/Si(100) substrates at the deposition rate of 100 $\AA$/min with substrate temperatures of 3$0^{\circ}C$, 10$0^{\circ}C$, 15$0^{\circ}C$, 20$0^{\circ}C$, 30$0^{\circ}C$, and 40$0^{\circ}C$, respectively. We employed a vibrating sample magnetometer(VSM) to measure the B-H loops showing the saturation magnetifation, coercivity, remanence in in- plane and out- of- plane modes. In- plane coercivity, perpendicular coercivity, and perpendicular remanence increased as substrate temperature increased, how-ever they decreased after 30$0^{\circ}C$ slowly. Transmission electron microscope (TEM) characterization revealed that the self organized nano structure (SONS) appears at the elevated substrate temperature, which forms fine Co-enriched phases inside a grain, then it eventually affect the perpendicular magnetic property. Our results imply that we may tune the perpendicular magnetic properties with SONS obtained at appropriate substrate temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta\theta_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 200Oe. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.

• 한국자기학회지
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• 제26권6호
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• pp.179-184
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• 2016

스핀전달토크(Spin-Transfer Torque: STT) MRAM의 상용화를 위해서는 낮은 반전전류와 높은 열적 안정성을 동시에 만족해야 하고, 이를 위해서는 큰 스핀 분극, 강한 수직자기이방성 에너지을 가지는 물질이 요구된다. 본 연구에서는 STT-MRAM에 적합한 물질로 알려진 B2 CoFe 면심에 X(O, F, S, Cl) 원자가 위치한 $CoFeX_3$ 합금의 전자구조와 자기결정이방성(Magnetocrystalline anisotropy: MCA) 에너지를 계산하였다. X 원자가 F나 Cl일 때는 페르미 준위에서의 스핀 분극율이 각각 97 %, 96 %로, 반쪽 금속에 근접한 전자구조를 가짐을 확인할 수 있었다. 뿐만 아니라 표면이 Co 원자로 끝나는 5층 박막은 모든 X에 대해 수직 자기이방성를 가졌으며, 특히 $CoFeCl_3$의 자기이방성 에너지는 약 1.0 meV/cell로 상당히 컸다. 따라서 6, 7 족 원소를 잘 활용하면 높은 스핀 분극율과 강한 수직 자기이방성를 동시에 가지는 물질을 제조할 수 있게 되어 STT-MRAM의 상용화에 기여를 할 수 있을 것으로 기대한다.

• 한국자기학회지
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• 제23권4호
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• pp.122-125
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• 2013

비정질 합금인 CoSiB과 비자성체 Pd을 이용하여 CoSiB/Pd 다층박막을 제작하고, 그 자기적인 특성을 분석하였다. $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ 다층박막을 $t_{CoSiB}$ = 0.1~0.6 nm의 범위로 제작하였고, 동일한 방법으로 $[CoSiB\;0.3nm/Pd\;t_{Pd}]_5$ 다층박막을 $t_{Pd}$ = 1.0~1.6 nm의 범위로 제작하여 두께에 따른 자기이방성과 포화자화도를 측정하였다. CoSiB 두께가 증함에 따라 포화자화도가 증가하는 경향을 보였는데, 특히 CoSiB의 두께가 0.2~0.3 nm 일 때 포화자화도가 급격하게 증가하였다. 보자력은 두께 0.2 nm 에서 최대값을 보이다가 두께가 증가함에 따라 점차 감소하는 것을 확인하였다. Pd의 두께 변화 실험에서는 포화자화도는 1.1~1.2 nm 구간에서 약간 감소하다가 1.3 nm 이후 점차 증가하였으며, 보자력은 포화자화도에 비해 확연한 규칙성을 보이지 않았으나, 전체적으로 Pd의 두께가 증가함에 따라 값이 감소하는 것을 알 수 있었다.

• 한국세라믹학회지
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• 제49권4호
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• pp.347-351
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• 2012

Vermiculite-silica composites with a layered structure were fabricated by adding cellulose fibers as a pore former and by a simple uniaxial pressing and subsequent sintering process. Three different combinations of additives were used and their effects on the compressive strength and thermal conductivity of the composites were investigated. Both compressive strengths (42-128 MPa) and thermal conductivities (0.75-1.48 $W/m{\cdot}K$) in the direction perpendicular to the pressing direction (T) were higher than those (19-81 MPa and 0.32-1.04 $W/m{\cdot}K$) in the direction parallel to the pressing direction (S) in all samples. The anisotropy in both properties was attributed to the microstructural anisotropy, which was caused by the layered structure developed in the composites.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.27.2-27.2
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• 2011

Polymer electronics is the one of the most promising way to realize the flexible electronics and many studies made remarkable progress to achieve the improvement in performance of polymer electronics comparable to current silicon-based technology. PBTTT is conjugated semiconducting polymer with highly ordered, chain-extended crystalline microstructures and shows high field effect mobilities above 0.1 $cm^2/Vs$. We studied PBTTTs FETs phase and explored methods to control channel interface in various device structures. Especially, in PBTTTs' unique nano-ribbon phase, we could obtain high mobilities of up to 0.4 $cm^2/Vs$, which was not reached before. Alignment of PBTTTs film was carried out using zone casting and anisotropy of mobilities in parallel and perpendicular to the polymer chain direction was investigated. Optical anisotropy in aligned nano-ribbon PBTTT FETs was also studied using a polarized optical absorption.

• 터널과지하공간
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• 제2권2호
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• pp.251-264
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• 1992

In this study, the size effect in measuring the fracture toughness of rock was investigated using the ISRM Suggested Method for Fracture toughness using Chevron Bend Specimens. Total 58 specimens were prepared with 4 different diameters, 29, 42, 54, 68mm and center cut-chevron notch. In addition to this, to evaluated the effect of anisotropy of Jecheon granite, which is the sample for this study, core drilling direction was adjusted perpendicular(short transverse) and parallel(arrester) to the rift plane in the sample and the measured fracture toughness for each direction were compared. Important results obtained from this study are as follows. Level ll test condition is more adequate than l, because of low data scattering and precision and corrected fracture toughness of Jechoen granite measured and 2.2MPa{{{{ SQRT { m} }}}} for arrester direction with minimum initial crack length 0.7cm. From the relationship between core diameter and initial crack length presented in the ISRM testing method, the specimen diameter should be bigger than 47mm. The fracture toughnesses measured for arrester and short transverse directon show 10% difference. This is to the anisotropy of Jecheon granite possessing rift plane.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1756-1760
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• 2006

LTPS technology based on SLS Crystallization was intensively reviewed. LTPS structure produced by SLS crystallization is composed of much larger grains compared with conventional ELA crystallization structure, which can give higher TFT performances. However, TFT performance uniformity and anisotropy problem should be solved for it to be used in mass production. TFT performance uniformity was from main grain boundary position and could be solved by equal defect area structure $(EDAS^{TM})$. TFT performance anisotropy could be also solved by multi-channel (MC) structure that can make parallel component in perpendicular channel direction. The higher TFT performances from SLS technology can make superior optical and/or electrical properties and has been adopted in mass production successfully.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.530-535
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• 2004

We have studied 90$^{\circ}$ twisted nematic mode switching by fringe electric field(F-TN mode) using a liquid crystal (LC) with negative dielectric anisotropy. In the device, two polarizers are parallel each other, electrodes exist only on bottom substrate, and one of rubbing direction is coincident with polarizer axis. Therefore, the cell shows a black state before a voltage is applied. With a bias voltage generating fringe-electric field, the LC twists perpendicular to fringe electric field such that the LCs are almost homogeneously aligned except near the bottom surface since the negative type of the LC is used. Consequently, the new device exhibits much wider viewing angle than that of the conventional TN mode due to in-plane switching and relatively high transmittance since the LC director above whole electrode area aligns parallel to the polarizer axis.