• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.76-82
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• 1998

As the minimum feature size of a semiconductor chip gets smaller, the inevitable distortion of patterned image by optical lithography becomes the limiting factor in the mass production of VLSI. The optical proximity correction (OPC), which corrects pattern distortion that originates from the resolution limit of optical lithography, is becoming indispensable technology. In this paper, we describe a program that corrects optical proximity effect and thus finds the optimum mask pattern with a Monte-Carlo method. The program was applied to real memory cell patterns to produce mask patterns that generate image patterns closer to object images than original mask patterns, and increase of process margin is expected, as well.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.2
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• pp.308-314
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• 2006

A line scan camera is applied to enhance COG(Chip On Glass) inspection accuracy to be measured a few micro unit. The foreign substance detection among various faulty factors has been the most difficult technology in the faulty automatic inspection step since COG pattern is very miniature and complexity. In this paper, we proposed two step area segmentation template matching method to increase matching speed. Futhermore to detect foreign substance(such as dust, scratch) with a few micro unit, the new method using gradient mask and AND operation was proposed. The proposed 2 step template matching method increased 0.3 - 0.4 second matching speed compared with conventional correlation coefficient. Also, the proposed foreign substance applied masks enhanced $5-8\%$ faulty detection rate compared with conventional no mask application method.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.6
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• pp.28-34
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• 2004

The old technique of sandblasting which has been used for decoration of glass surface has recently been developed into a powder blasting technique for brittle materials such as glass, silicon and ceramics, capable of producing micro structures larger than 100${\mu}{\textrm}{m}$. In this study, we introduced oblique powder blasting, and investigated the effect of the impacting angle of particles, the scanning times and the stand-off distance on the surface roughness and the weight-loss rate of samples with no mask, and the wall profile and overetching of samples with different mask pattern in powder blasting of soda-lime glass. The varying parameters were the different impact angles between 50$^{\circ}$ and 90$^{\circ}$, scanning times of nozzle up to 40 and the stand-off distances 70mm and 100mm. The widths of mask pattern were 0.2mm, 0.5mm and 1mm. The powder was alumina sharp particles, WA #600. The mass flow rate of powder during the erosion test was fixed constant at 175g/min and the blasting pressure of powder at 0.2Mpa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.168-172
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• 1999

The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.303-308
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• 2007

We report here on the application of a digital holographic microscope as a metrology tool for the inspection and the micro-topography reconstruction of different micro-structures of phase shift photo-mask (PSM). The lithography by phase shift photo-mask uses the interference and the pattern of the PSM is not imaged by general optical microscope. The technique allows us to obtain digitally a high-fidelity surface topography description of the phase shift photo-mask with only one hologram image acquisition, allowing us to have relatively simple and compact set-ups able to give quantitative information of PSM.

• The Research Journal of the Costume Culture
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• v.29 no.3
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• pp.406-421
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• 2021

During the COVID-19 pandemic, the obligatory wearing of masks has led to increased consumer demand and the diversification of mask design. Accordingly, it is necessary to understand the inner meaning and characteristics of masks in the pandemic situation. Therefore, the purpose of this research is to analyze the characteristics of fashionable masks and their new cultural meaning under the COVID-19 pandemic. This research is based on literature review and empirical research. Drawing on an investigation of the historical evolution of masks and their transition under the pandemic (exhibiting differences in mask culture among countries and regions), this study analyzed 54 distinctive fashion masks designed by fashion brands and influencers that appeared from January 2020 to January 2021. The characteristics of fashion masks identified under the influence of the pandemic are as follows: Message delivery on political issues and human rights; psychological defense and expression of individuality; and conspicuous display via luxurious materials and luxury brand logos; moreover, the design of the mask uses the same material, color, pattern, decoration, and other methods as clothing to achieve the overall style. Over the course of the pandemic (and even in post-pandemic lifestyle), fashion masks are becoming more diversified conveying new social and cultural meanings.

• Proceedings of the KAIS Fall Conference
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• 2002.11a
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• pp.201-204
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• 2002

Overlay margin 확보를 위한 oversizing과, design rule checking, jog filtering를 통하여 side-lobe를 추출하였다. 이렇게 추출한 side-lobe를 extent하고, Cr pattern을 정의하여 side-lobe 현상을 해결할 수 있었다. 하지만 이 방법은 mask제조 공정이 복잡하므로 Cr shield방식의 단점인 복잡한 mask제작공정과 구조를 단순화하기 위하여 scattering bar를 이용하였다. 따라서, scattering bar를 삽입하기 위한 rule을 생성하여 metal layer에 적용하고 aerial image simulation을 통해 side-lobe 현상이 억제되었음을 확인하였다. 그리고 앞에서와는 반대로 background clear의 경우에 발생하는 side-lobe에 scattering bar를 적용하여 억제됨을 확인하였다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.191-194
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• 2003

Low energy EPL용 마스크 구현을 위한 특성을 연구하였다. Monte Carlo 법을 이용하여 시뮬레이터를 제작하였고, pattern side wall의 slope와 membrane의 Thickness, 전자빔의 가속전압에 따른 전자빔의 거동을 확인함을 통하여 Low energy EPL용 마스크 제작을 위한 spec.을 도출하였다. 또한 실제 제작을 위한 기초단계로 Si etching을 수행하였으며, mask 제작법에 대한 가능성을 확인할 수 있었다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.127-127
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• 2004

입자분사 가공(abrasive jet machining)은 과거에는 녹(rust) 도색(painting)의 제거 흑은 디버링(deburring), 표면 처리 등의 용도에 국한되어 사용되어졌다. 한편 최근 들어 반도체 제작공정이나 MEMS 공정 등에 적용되는 실리콘(silicon) 등의 세라믹 재료의 미세가공분야가 주목받고 있으며, 따라서 이와 관련된 많은 연구가 진행되고 있다. 한편, 세라믹 재료는 파괴인성이 매우 낮고 취성이 강하기 때문에 크랙발생 후 큰 응력이 연속적으로 주어지면 크랙은 음속으로 진행되어 파단 되는 특성이 있어서 일반적인 기계가공이 매우 어렵다.(중략)

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.598-601
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• 2005

Z-correction is new method to be used when measuring pattern registration of photomasks. The method is based on measurement of the plate profile in the Zaxis and takes into account the impact on the registration deviations caused by plate support, contamination as well as the photomask flatness itself. Z-correction further facilitates a more neutral way of judging the overlay properties between individual photomasks within a mask set.