• Current Photovoltaic Research
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• 제9권3호
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• pp.96-105
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• 2021

Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se₂ (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer growth. To avoid the degradation, it is necessary to prevent the diffusion of Zn atoms from Zn-containing buffer to CIGS film. For the purpose, we characterized an In₂Se₃ film as a possible diffusion barrier layer because In₂Se₃ has no Zn component. It was found that an In₂Se₃ layer grown at 300℃ was very effective in preventing Zn diffusion from a Zn-containing buffer. Also, the In₂Se₃ had a large potential barrier in the valence band at the In₂Se₃/CIGS interface. Therefore, In₂Se₃ passivation has the potential to achieve a super-high efficiency in CIGS solar cells that employ Cd-free ALD processed buffers containing Zn.

• 대한화학회지
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• 제58권1호
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• pp.9-16
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• 2014

Borate 완충용액에서 Ni의 부동화 피막의 생성과정(growth kinetics)과 부동화 피막의 전기적 성질을 변전위법, 대 시간 전류법 그리고 단일 주파수 또는 다중 주파수 전기화학적 임피던스 측정법으로 조사하였다. 이때 생성되는 산화피막은 Mott-Schottky 식이 적용되는 p-형 반도체 성질을 보였으며, 낮은 전극전위에서 생성되는 Ni의 부동화 피막 $Ni(OH)_2$는 전극 전위가 증가하면서 NiO, NiO(OH)로 변화되는 것을 알 수 있었다.

• 한국재료학회지
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• 제13권2호
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• pp.94-100
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• 2003

The interface between low carbon steel and blended cement pastes containing slag was investigated using impedance spectroscopy. In addition, the pastes were characterized by several analytical methods (XRD, EDX, electrode potential, pH and ICP). The electrical behavior of the interface in the blended slag systems is correlated to its corresponding pore solution chemistry and the products present in the interface. Passivation occurred at the paste/steel interfaces, in cement pastes up to containing from 0 to 75% slag content. 100% slag paste induced corrosion of the low carbon steel, which could be explained by the influence of sulfur on the system.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2002년도 춘계학술대회논문집
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• pp.147-152
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• 2002

This paper was studied on corrosion of heat exchanger tube for absorption refrigeration machine. In the 62 % lithium bromide solution at $60^{\circ}C$, polarization test of Cu, Al-brass, 10 % cupro nickel(90-10 % Cu-Ni) and 30 % cupronickel(70-30 % Cu-Ni) tube was carried out. And polarization behavior, polarization resistance characteristics, open circuit potential, anodic polarization of heat exchanger tube for absorption refrigeration machine were considered. The main results are as following: The open circuit potential of Al-brass tube becomes less noble than that of Cu tube, corrosion current density of that becomes lower than Cu tube. The open circuit potential of cupronickel tube is more noble than that of Cu tube, corrosion current density of that is controlled than Cu tube. The passivation critical current of 30 % Cu-Ni tube is lower than that of 10 % Cu-Ni tube, potential of passive region of that is more wide than 10 % Cu-Ni tube.

• 한국정밀공학회지
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• 제23권4호
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• pp.146-152
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• 2006

In micro electrochemical machining (ECM), electrodes should be prevented from unfavorable oxide and Passive layer formation on the machined surface or overall corrosion of the entire surface. Generally, metal electrodes corrode, passivate or dissolve in the electrochemical cell according to the electrode potential. Therefore, each electrode must maintain its stable potential. Tn this paper, the stable electrode potentials of tool and workpiece were determined using the potentiodynamic polarization test and verified experimentally considering machining stability and surface quality. Stable workpiece electrode potentials of two different passive materials of 304 stainless steel and nickel were determined in the 0.1 M sulfuric acid. Experimental results show good machined surface and fast machining rate using the determined electrode potentials.

• 한국가스학회지
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• 제5권4호
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• pp.33-39
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• 2001

흡수식냉동기의 작동매체로 사용되고 있는 LiBr수용액 중에서 각 구성재료인 일반구조용 압연강재, 동 및 동합금재인 Ai-Ni bronze의 부식거동에 관한 연구를 하기 위하여, 여러 가지 농도의 LiBr 수용액 중에서 각 재료에 대한 분극실험을 실시하여 부식거동을 고찰한 결과 다음과 같은 결론을 얻었다. 1) 수용액의 LiBr 농도가 증가할수록 각 재료의 분극저항은 낮아지고, 개로전위는 비전 위화되면서 부식전류밀도는 높게 배류된다. 2) 일반구조용 압연강재의 개로전위는 동 및 Al-Ni bronze의 개로전위보다 비전위화되면서 부식전류밀도는 더 높게 배류된다. 3) 동 및 Al-Ni bronze에 대한 $62\%$ LiBr 수용액 중에서의 양극분극은 활성태로 지속되지만, 천연해수 중에서의 양극분극은 활성태가 지속되다가 부동태화전류가 나타난다.

• 대한화학회지
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• 제28권5호
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• pp.271-278
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• 1984

염기성 용액에서 기계적으로 연마한 고순도 철의 전위를 환원 전위로부터 부동화 전위로 급격히 변화시켜서 부동화 막이 전극표면에 형성되게 하면서 철의 반사율 변화와 타원편광반사법(Ellipsometry) 측정을 하였다. 철 표면이 부동화 될때 일어나는 반사광의 편광 파라메터(${\Delta},\;{\psi}$)와 반사율(R) 변화를 자동화된 타원편광반사계로 기록하였고, 이로부터 철을 부동화 상태에 들어가게 하는 표면막의 두께(${\tau}$)와 광학상수(n, k)들의 변화하는 값을 계산할 수 있었다. 광학상수 값들로 나타나는 막의 성질이 시간에 따라 급격한 전이를 하는 것은 관찰되지 않았으며, 비교적 짧은 시간(수초)내에 정상 상태 값에 접근하였다. 효과적으로 부동화를 일으키는 막의 두께는 $14\;{\sim}\;23{\AA}$의 범위에 있었다. 형성된 부동화 막은 용액의 pH가 큰 경우에는 얇고 치밀한 구조를 가진 것으로 보이며, pH가 작은 경우에는 두께는 두껍지만 pH가 큰 경우보다 덜 치밀한 부동화 막이 형성되는 것으로 보였다. 이들 부동화 막은 약간의 흡광성을 가지는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.297.2-297.2
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• 2013

Scavenging electricity from wasteful energy resources is currently an important issue and piezoelectric nanogenerators (NGs) based on zinc oxide (ZnO) are promising energy harvesters that can be adapted to various portable, wearable, self-powered electronic devices. Although ZnO has several advantages for NGs, the piezoelectric semiconductor material ZnO generate an intrinsic piezoelectric potential of a few volts as a result of its mechanical deformation. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. Oxygen vacancies (Vo) that work as donors exist in ZnO thin film and usually screen some parts of the piezoelectric potential. Consequently, the ZnO NGs' piezoelectric power cannot reach to its theoretical value, and thus decreasing the effect from Vo is essential. In the present study, c-axis oriented insulator-like sputtered ZnO thin films were grown in various temperatures to fabricate an optimized nanogenerator (NGs). The purity and crystalinity of ZnO were investigated with photoluminescence (PL). Moreover, by introducing a p-type polymer usually used in organic solar cell, it was discussed how piezoelectric passivation effect works in ZnO thin films having different types of defects. Prepared ZnO thin films have both Zn vacancies (accepter like) and oxygen vacancies (donor like). It generates output voltage 20 time lager than n-type dominant semiconducting ZnO thin film without p-type polymer conjugating. The enhancement is due to the internal accepter like point defects, zinc vacancies (VZn). When the more VZn concentration increases, the more chances to prevent piezoelectric potential screening effects are occurred, consequently, the output voltage is enhanced. Moreover, by passivating remained effective oxygen vacancies by p-type polymers, we demonstrated further power enhancement.

• 전기학회논문지
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• 제66권4호
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.332-340
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• 2023

Crystalline silicon solar cells have attracted great attention for their various advantages, such as the availability of raw materials, high-efficiency potential, and well-established processing sequence. Tunnel oxide passivated contact (TOPCon) solar cells are widely regarded as one of the most prospective candidates for the next generation of high-performance solar cells because an efficiency of 26% has been achieved in small-area solar cells. Compared to n-type TOPCon solar cells, the photo conversion efficiency (PCE) of p-type TOPCon is slightly higher. The highest PCEs of p-type TOPCon and n-type TOPCon solar cells are 26.0% and 25.8%, respectively. Despite the highest efficiency in small-area cells, limited progress has been achieved in p-type TOPCon solar cells for large are due to their lower carrier lifetime and inferior surface passivation with the boron-doped c-Si wafer. Nevertheless, it is of great importance to promoting the p-type TOPCon technology due to its lower price and well-established manufacturing procedures with slight modifications in the PERC solar cells production lines. The progress in different approaches to increase the efficiencies of p-type TOPCon solar cells has been reported in this review article and is expected to set valuable strategies to promote the passivation technology of p-type TOPCon, which could further increase the efficiency of TOPCon solar cells.