• Journal of Surface Science and Engineering
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• v.37 no.2
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• pp.110-118
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• 2004

The corrosion of pure titanium (CP- Ti Grade 2) and titanium alloy (Ti6Al4V ELI) were studied under various conditions of simulated body fluids. The static immersion test and the electrochemical test were performed in accordance with ISO 10271 : 2001. For the electrochemical test, the open circuit potential was monitored as a function of time, and the cyclic polarization curve was recorded. The corrosion resistance was evaluated from the values of corrosion potential, passivation current density, breakdown potential, and the shape of hysteresis etc. The effects of alloy type, surface condition, temperature, oxygen, and constituents in the fluids such as acid, chloride were estimated. Both specimens had extremely low dissolution rate in the static immersion test. They showed strong passivation characteristics in the electrochemical test. They maintained negligible current density throughout the wide anodic potential range. The passive layer was not broken up to 2.0 V (vs. SCE). The hysteresis and the shift of passivation potential toward the anodic direction was observed during the reversed scan. The passivation process appeared to be accelerated by oxygen in air or that dissolved in the fluids. The passivation also proceeded without oxygen by the reaction of constituents in the fluids. Acid or chloride in the fluids, specially later weakened the passive layer, and then induced higher passivation current density and less shift of passivation potential in the reversed scan. CP-Ti Grade 2 was more reactive than Ti6Al4V ELI in the fluids containing acid or chloride, but thicker layer produced on its surface provided higher corrosion resistance.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.45-49
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• 2008

The cyclic polarisation technique was applied to determine the corrosion, primary-passivation, transpassive, and protection potential of AISI 316L stainless steels immersed in 3550-ppm NaCl solution containing sulfate in the content up to 3000 ppm. The solutions were kept constant at $27^{\circ}C$ and saturated by laboratory air. The solution pH was varied from 3 to 11. Each type of potentials was plotted in function of pH and linked as lines to determine the different zones in the constructed potential-pH diagram. The predominant regimes of the immunity, general corrosion, perfect passivation, imperfect passivation, and pitting corrosion were determined based on those lines of potentials. Comparing to the potential-pH diagram of specimens immersed in the aerated and deaerated 3550-ppm NaCl solutions, the addition of 3000-ppm $Na_2SO_4$ to these solutions increased the overall, perfect and imperfect, passivation regime by shifting the transpassive-potential line to the noble direction. However, it also widened the imperfect passivation area. The addition of $Na_2SO_4$ did not significantly affect the corrosion potential. It was found that the dissolved oxygen tends to negatively shift the transpassive-potential and protection-potential lines at all studied pH. The considerable effect of dissolved oxygen on corrosion and primary-passivation potentials could not be observed.

• Journal of IKEEE
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• v.23 no.3
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• pp.1033-1037
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• 2019

GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

• Nuclear Engineering and Technology
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• v.56 no.10
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• pp.4455-4462
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• 2024

This study investigates the efficient passivation of CdTe-based semiconductor crystals, focusing on the long-term stability and underlying mechanisms of NaOCl passivation. CdZnTeSe crystals were grown, processed, and passivated with NaOCl, and their surface characteristics were studied using SEM-EDS and XPS. The passivation was found to significantly enhance the surface resistance, with a sustained effect for more than 90 s, attributed to the formation of a tellurium oxide layer. The passivation process was further elucidated through detailed morphological and compositional analyses. The NaOCl-passivated crystals exhibited improved electrical and spectroscopic properties in radiation detection, with a prolonged stability of 60-90 days, which are longer compared to other passivants. Additionally, the feasibility of NaOCl passivation on a CdZnTeSe detector was explored, showcasing enhanced material resistance and spectroscopic performance. The study concludes with insights into the potential industrial application of NaOCl passivation for CdTe-based radiation detectors.

• Journal of the Korean Chemical Society
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• v.18 no.6
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• pp.391-399
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• 1974

Corrosion and passivation of metallic cobalt was studied by means of electrochemical experiments including potentiostatic and galvanostatic measurements and cyclic voltammograms. The mechanisms of active dissolution and passivation of cobalt at the metal/borate buffer solution interface are deduced from the Tafel slope, pH dependence of the Flade potential, and dissolution kinetic data. Hydroxyl group adsorbed on cobalt surface seems to participate in surface oxidation and formation of the passive layer. The growth kinetic data as measured by the current density suggests a mechanism in which the growth of the passive layer is determined by field-assisted transport of ions through the layer. Thickness of the passive layer was estimated by coulometry to be about 10${\AA}$ at the lowest passive potential and to grow gradually with anodic potential to about 20${\AA}$.

• Korean Journal of Metals and Materials
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• v.47 no.10
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• pp.644-651
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• 2009

The passivation (or deactivation) of a metal surface during oxide film formation has been quantitatively explored for a ferritic stainless steel by using dynamic electrochemical impedance spectroscopy (DEIS). For this purpose, the electrochemical impedance spectra were carefully examined as a function of applied potential in the active nose region of the potentiodynamic polarization curve, to separate the charge transfer resistance and oxide film resistance. From the discrepancy in the potential dependence between the experimental charge transfer resistance and the semi-empirically expected one, the degree of passivation could be quantitatively estimated. The sensitivity of passivation of the steel surface to anodic potential, which might be the measure of the quality of the oxide film formed under unit driving force or over-potential, decreased by 31% when 3.5 wt% NaCl was added to a 5 wt% $H_2SO_4$ solution.

• Journal of the Korean Electrochemical Society
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• v.10 no.1
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• pp.14-19
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• 2007

The corrosion and passivation of copper was investigated with the copper rotating disk electrode(Cu-RDE) in borate buffer solution. It has been observed with the mixed potential theory that the corrosion potential for the rotation rate increase under the convective diffusion condition was increased. It was suggested that the chemical intermediates and product 13. the copper oxidation were $Cu(OH)_{ads},\;{Cu(OH)_2}^-,\;Cu_2O,\;Cu(OH)_2,\;and\;CuO$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.126-129
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1369-1371
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• 2001

This paper describes on thinning SDB SOI substrates by SDB technology and Electro-chemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic passivation potential. The surface roughness and selectively controlled thickness of the fabricated SOI substrates were analyzed by using AFM and SEM, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.301-306
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.