• Corrosion Science and Technology
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• 제7권1호
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• pp.45-49
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• 2008

The cyclic polarisation technique was applied to determine the corrosion, primary-passivation, transpassive, and protection potential of AISI 316L stainless steels immersed in 3550-ppm NaCl solution containing sulfate in the content up to 3000 ppm. The solutions were kept constant at $27^{\circ}C$ and saturated by laboratory air. The solution pH was varied from 3 to 11. Each type of potentials was plotted in function of pH and linked as lines to determine the different zones in the constructed potential-pH diagram. The predominant regimes of the immunity, general corrosion, perfect passivation, imperfect passivation, and pitting corrosion were determined based on those lines of potentials. Comparing to the potential-pH diagram of specimens immersed in the aerated and deaerated 3550-ppm NaCl solutions, the addition of 3000-ppm $Na_2SO_4$ to these solutions increased the overall, perfect and imperfect, passivation regime by shifting the transpassive-potential line to the noble direction. However, it also widened the imperfect passivation area. The addition of $Na_2SO_4$ did not significantly affect the corrosion potential. It was found that the dissolved oxygen tends to negatively shift the transpassive-potential and protection-potential lines at all studied pH. The considerable effect of dissolved oxygen on corrosion and primary-passivation potentials could not be observed.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.99.2-99.2
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafer and surface morphology. It is observed that passivation quality of a-Si:H thin-films on c-Si wafer highly depends on wafer surface conditions. The MCLT(Minority carrier life time) of wafer incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with cleaning process and surface morpholgy. By applying improved cleaning processes and surface morphology we can obtain the MCLT of $200{\mu}sec$ after H-termination and above 1.5msec after i a-Si:H thin film deposition, which has implied open circuit voltage of 0.720V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.438-438
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• 2009

We have investigated the effect of forming gas annealing for Upgraded Metallurgical Grade (UMG)-silicon solar cell in order to obtain low-cost high-efficiency cell using post deposition anneal at a relatively low temperature. We have observed that high concentration hydrogenation effectively passivated the defects and improved the minority carrier lifetime, series resistance and conversion efficiency. It can be attributed to significantly improved hydrogen-passivation in high concentration hydrogen process. This improvement can be explained by the enhanced passivation of silicon solar cell with antireflection layer due to hydrogen re-incorporation. The results of this experiment represent a promising guideline for improving the high-efficiency solar cells by introducing an easy and low cost process of post hydrogenation in optimized condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.332-333
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• 2009

In this paper, we have deposited silicon nitride films by plasma-enhanced chemical vapor deposition (PECVD). For films deposited under optimized conditions, the mechanism of plasma-enhanced vapor deposition of silicon nitride is studied by varying process parameters such as rf power, gas ratio, and chamber pressure. It was demonstrated that organic light-emitting diode(OLEDs) were fabricated with the inorganic passivation layer processing. We have been studied the inorganic film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation layer, we have carried out the fabrication of OLEDs and investigate with luminescence and MOCON.

• 전자공학회논문지A
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• 제33A권11호
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• pp.97-104
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• 1996

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.205-208
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• 1994

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li secondary battery. PEO-$LiClO_4$ electrolyte with plasticizer is very unstable. Passivation phenomena in polymer electrolyte cell was described by the SPL model. The time dependance of the impedance indicates that a passivation layer grows rapidly on the Li surface. However, the growing of passivation layer on the Li surface can be restrained by addition of zeolite to the PEO electrolyte. It suggested that addition of zeoliteto to the PEO-$LiClO_4$ electrolyte effectively controls the formation of a passivation layer on Li electrode.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.139-139
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• 1999

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.397-397
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• 2008

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1422-1423
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• 2011

Passivation 막이 증착될 때 산화물 반도체의 백 인터페이스에 주는 플라즈마 데미지와 화학적으로 유도된 데미지를 최소화하기 위하여 산화물 반도체의 보호막으로서 자가조립단분자막(SAM) 적용을 제안한다. TFT가 PECVD나 용액을 기반으로 한 재료로 passivation 될 때 산화물 반도체의 back interface는 플라즈마 데미지와 화학적으로 유도되는 데미지를 피할 수 없다. 자가조립단분자막을 적용함으로써 플라즈마 데미지를 막아줌으로써 이동도와 문턱전압 이하에서의 기울기(SS)의 열화와 용액을 기반으로 한 passivation으로 인한 특성변화(Von)를 최소화 하였다.