• 전자공학회논문지D
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• 제34D권6호
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• pp.20-32
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• 1997

An optimum parasitic inductance is observed for maximizing the modulation bandwidth of the multiple quantum well (MQW) electro-absorption optical modulator. For 1.1 pF device cpaacitance of the current MQW optical modulator, the optimum parasitic inductances for maximum bandwidth are calculated for different terminating resistors. In ase of 50.ohm. terminating resistor, the 3-dB modulation bandwidth can be increased 45% wider by using the optimum parasitic inductance than nothing parasitic inductance. This calculated optimum inductance can be practically implemented, since the parasitic inductance of bondwires can be accurately analyzed using the method of moments (MoM) and controlled by changing the length and shpae of bondwires.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• 대한전자공학회논문지TC
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• 제46권11호
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• pp.50-55
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• 2009

본 논문에서는 분포정수 회로합성을 이용하여 최적의 정전용량 흡수 능력을 갖는 분포증폭기를 설계한다. 증폭기를 구성하는 여파기의 전달함수는 저역통과 Chebyshev 근사로 합성하며, 이의 정전용량 흡수 능력은 최소 삽입손실(MIL)과 리플의 함수로 계산한다. 분포증폭기의 능동 소자는 S-퍼래미터를 이용하여 등가회로로 모델링하며, 이의 정전용량은 전달함수의 MIL과 리플을 적절히 조정함으로써 여파기 구조로 흡수한다. 이의 응용 예로써, 0.1~7.5GHz의 주파수 대역에서 약 12.5dB의 이득을 갖는 분포증폭기를 설계하며, 실험을 통하여 정전용량 흡수 능력을 고려한 분포정수 회로합성이 분포증폭기의 설계에 유용하게 이용될 수 있음을 입증한다.

• 한국전자파학회논문지
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• 제27권4호
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• pp.399-402
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• 2016

본 논문에서는 버랙터 다이오드와 다중 슬릿을 결합한 광대역 주파수 가변 흡수체를 제안한다. 의도적으로 구성된 폭이 좁은 슬릿에 의한 기생 커패시턴스와 버랙터 다이오드를 직렬 연결하여 도체 표면의 전체 커패시턴스를 효과적으로 낮췄다. 그 결과, 기존의 흡수체에 비해 훨씬 높은 주파수 영역에서도 높은 흡수율을 얻을 수 있을 뿐만 아니라, 슬릿 개수를 조절하여 동작 주파수 대역도 자유롭게 선택할 수 있다. 기생 커패시턴스가 임피던스 매칭에 미치는 영향을 분석했고, 시뮬레이션 결과와 측정 결과가 잘 일치하는 것을 통해 제안된 방법의 타당성을 입증했다.

• 한국전자파학회논문지
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• 제30권3호
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• pp.181-189
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• 2019

본 논문에서는 WLAN(Wireless Local Area Network) 대역의 2.4 GHz, 5.8 GHz와 5G 대역의 3.5 GHz에서 사용가능한 3중 대역 모노폴 안테나를 설계하였으며, 제안된 안테나의 크기는 $100{\times}75{\times}1.6mm^3$로 기생소자를 사용하여 3중 대역 모노폴 안테나를 구현하였다. 또한 제안된 안테나로부터 ${\lambda}/4$ 떨어진 거리에 반사판을 설치함으로써 각 동작주파수들에서의 이득 향상과 SAR(Specific Absorption Rate)을 저감시켰다. 제작한 안테나를 측정한 결과, 반사 계수 -10 dB 이하 기준으로 540 MHz(2.02~2.56 GHz), 390 MHz(3.39~3.78 GHz) 그리고 1,210 MHz(5.56~6.77 GHz)에 해당하는 대역폭을 얻었다. 국제기준에서 요구하는 SAR 기준대비 2.4 GHz에서는 85.12 % 감소했고, 3.5 GHz에서는 50.06 %, 5.8 GHz에서는 36.87 % 감소하였다. 그러므로 제안된 안테나는 국제기준 SAR을 만족하며, WLAN과 5G 대역의 통신에서 사용할 수 있다.

• Journal of Electrical Engineering and Technology
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• 제8권4호
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• pp.850-855
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• 2013

This paper proposes a novel design for a compact, high-isolation WCDMA indoor repeater antenna. The proposed antenna consists of a patch antenna and metamaterial absorber. The required WCDMA bandwidth is obtained by utilizing the coupling between the main and the parasitic patches. In addition, high isolation is achieved using the metamaterial absorber, which has an absorption of about 98% at 2.1 GHz. Overall, the proposed antenna has a gain of over 7 dBi, a Voltage Standing Wave Ratio (VSWR) of less than 2, more than 85 dB of isolation between the service and donor antennas over the WCDMA band and a total volume of the proposed antenna only $70mm{\times}70mm{\times}43.8mm$.

• Current Photovoltaic Research
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• 제10권1호
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• pp.23-27
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• 2022

In this study, we investigate organic-inorganic halide perovskite solar cells with a vacuum thermal evaporated hole transporting layer (NPB/MoO_3-x). By replacing solution process based Spiro-MeOTAD with vacuum thermal evaporation based NPB/MoO_3-x, a thin hole transporting layer was implemented. In addition, parasitic absorption that may occur during the doping process was eliminated by excluding solution process doping. In a solar cell with a thin vacuum thermal evaporated hole transporting layer, the short-circuit current density (Jsc) increased to 23.93 mA/cm², resulting in the highest power converstion efficiency (PCE) at 18.76%. Considering these results, it is essential to control the thickness of hole transporting layer located at the top in solar cell configuration.

• 대한전자공학회논문지TC
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• 제49권6호
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• pp.57-62
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• 2012

본 논문에서는 안테나 간 격리도 개선을 위해 메타구조 기반의 흡수체를 이용한 WCDMA 댁내형 중계기 안테나를 제안하였다. 제안된 안테나는 메타구조 흡수체가 배열된 메인패치와 대역폭을 위한 기생패치로 이루어져 있다. WCDMA 대역폭을 만족하기 위해 메인패치와 기생패치 사이의 커플링을 이용하였다. 메타구조 기반의 흡수체의 크기는 $13mm{\times}13mm$ 이며, 흡수율은 2.18 GHz 대역에서 약 94 % 의 특성을 갖고 있다. 송신 안테나와 수신 안테나 사이의 격리도는 메타구조 기반의 흡수체를 이용하여 개선하였다. 제안된 WCDMA 댁내형 중계기 안테나는 1.92 GHz부터 2.17 GHz 대역에서 6 dBi 이상의 안테나 이득과 2 이하의 VSWR 특성을 가지고 있으며, 송수신 안테나 사이의 격리도는 85 dB 이하의 특성을 나타내고 있다. 제안된 안테나의 크기는 $75mm{\times}75mm$ 이다.

• 한국전기전자재료학회논문지
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• 제34권4호
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.