• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.2 s.344
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• pp.88-93
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• 2006

In this paper, smaller load has been used compared with the conventional Doherty amplifier and PBG structure have been employed to suppress IMD (Inter-modulation Distortion) and improve PAE (Power Added Efficiency). And The PBG structure has been employed on the output macthing network of Doherty amplifier. The proposed power amplifier has been improved more the IMD3 by 5.5 dBc, and the average PAE by $5\%,$ at peak output power, $18\%$ at 8dB back-off point respectively than the conventional Doherty power amplifier.

• Applied Chemistry for Engineering
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• v.5 no.5
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• pp.786-794
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• 1994

The strength and durability of polymer-cement mortars were investigated. The specimens of polymer-cement mortar were prepared by using styrene-butadiene rubber(SBR) latex, ethylene-vinyl acetate(EVA) emulsion and polyacrylic ester(PAE) emulsion with various polymer-cement ratios(5, 10, 15, 20wt%). For the evaluation of durability of polymer-cement mortars, freezing-thawing, acid resistance and heat resistance tests were conducted. With an increase of polymer-cement ratio, the frost resistance of polymer-cement mortars was greatly improved, but acid and heat resistance were deteriorated. The compressive and flexural strengths of SBR polymer-cement mortars were improved with an increase of polymer-cement ratio, whereas those of EVA and PAE polymer-cement mortars reached maximum value at polymer-cement ratio of 10wt%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.164-169
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• 2005

In this paper, the high efficiency Doherty power amplifier using adaptive bias technique has been designed and realized for 2.3GHz Wibro applications. The RF performances of the Doherty power amplifier using adaptive bias technique have been compared with those of a class AB amplifier alone, and conventional Doherty amplifier. The Maximum PAE of designed Doherty power amplifier with adaptive bias technique has been 36.6% at 34.0dBm output power. The proposed Doherty power amplifier showed an improvement 1dB at output power and 7.6% PAE than a class AB amplifier alone.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.5
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• pp.621-627
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• 2011

In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.

• YAKHAK HOEJI
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• v.57 no.6
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• pp.394-399
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• 2013

In this study we demonstrated whether the extract of Polygonum aviculare L. (PAE) can be applied to the immune-stimulating responses in macrophages (Raw 264.7 cells). Cell viability was determined by WST-8 assay, and all four doses of PAE (5, 10, 20, and 40 ${\mu}g/ml$) had no significant cytotoxicity during the entire experimental period. PAE increased the production of inducible nitric oxide synthase (iNOS) and nitric oxide (NO), and mRNA expressions and protein levels of pro-inflammatory cytokines(tumor necrotic factor (TNF)-${\alpha}$, interleukin (IL)-$1{\beta}$ and IL-6) in the same cells. These immune-stimulating activities of PAE were found to be caused by the stimulation of $NF{\kappa}B$ signal and phosphorylation of MAP kinases (p38, ERK and JNK).

• Journal of the Korea Concrete Institute
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• v.19 no.5
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• pp.539-547
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• 2007

The effects of binder and alumina content on the setting time, drying shrinkage, strength, freezing and thawing resistance and water absorption of polymer-modified pastes with alumina powder were examined. As a result the setting time of the polymer-modified pastes with alumina powder tended to delay with increasing binder content. Irrespective of the type of polymer, the drying shrinkage of the polymer-modified pastes with alumina powder tended to decrease with increasing binder content and alumina powder content. Regardless of the type of polymer, the tensile and adhesion strengths of the polymer-modified pastes with alumina powder tended to increase with increasing binder content and alumina powder content. Irrespective of the type of polymer, the durability factors of the polymer-modified pastes with alumina powder tended to increase with increasing alumina content. Irrespective of the type of polymer, the water absorptions of the polymer-modified pastes with alumina powder tended to decrease with increasing binder content and alumina content.

• Journal of the Korea Concrete Institute
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• v.15 no.6
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• pp.888-893
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• 2003

The purpose of this study is to make clear the durability of the polymer films formed in the autoclaved polymer-modified mortars and concretes. The polymer films prepared with polymer dispersions such as a styrene-butadiene rubber (SBR) latex, a poly (ethylene-vinyl acetate)(EVA) emulsion and a polyacrylic ester (PAE) emulsion for polymeric admixtures are exposed to autoclaving at 18$0^{\circ}C$ in temperature and 1.01 MPa in vapor pressure, and subjected to tensile test and infrared spectroscopy. The durability of the polymer films is evaluated from the application of autoclaving to the polymer films under saturated Ca(OH)$_2$ solution immersion causes no degradation for SBR films and a significant degradation due to the saponification of the polymers for EVA and PAE films. Accordingly, in the application of autoclaving to polymer-modified mortars and concretes, it is suggested that SBR-modified mortars and concretes are hardly degraded but EVA- and PAE-modified mortars and concretes are markedly degraded by the saponification of the polymers.

• Journal of Navigation and Port Research
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• v.30 no.5 s.111
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• pp.351-356
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• 2006

In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LDMOS FET. The RF performances cf the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias-tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier P1dB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows 11dB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2006.06b
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• pp.91-96
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• 2006

In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LOMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias..tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier PldB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows 11dB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%.