• 전자공학회논문지 IE
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• v.47 no.3
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• pp.47-52
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• 2010

In this paper, a frequency tripler has been designed with 100mW medium-power using P-HEMT. It is designed to obtain 7.2GHz frequency at the output that is an integer multiple of 2.4GHz input frequency by using nonlinear device that produces 3rd harmonic. The frequency tripler is designed by using load-pull simulation. To suppress the 2nd and fundamental, notch filter is used for the frequency tripler. The tripler is designed to obtain about 21dBm output power with 15dBm input, i.e., 6dB conversion gain and the suppression of 20dBc at fundamental, and 30dBc at the second harmonics.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1635-1640
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• 2000

In this paper, a 18 GHz oscillator is designed with the push-push method an fabricated by semi-MMIC process, in which the second harmonic is the main output signal with the suppressed fundamental mode. In semi-MMIC process, passive components with microstrip transmission line are implemented using MMIC process on semi-insulating GaAs substrate. Then, chip types of P-HEMT, resistors, and capacitors are connected through Au wire-bonding. Also, the ground plane is inserted around the circuit and connected each other with the back-side of substrate through Au wire-bonding instead of via-hole. The semi-MMIC push-push oscillator shows the output powder of -10.5 dBm, the fundamental frequency suppression of -17.3 dBc/Hz, and the phase noise of -97.9 dBc/Hz at the offset frequency of 100 kHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.783-789
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• 2002

In this paper, V-band MMIC coupled oscillator arrays are presented. In the proposed array, two push-pull patch antennas are synchronized by using strong electromagnetic coupling between two antennas. As a result, total size of the array is reduced and the array can be integrated in a single chip. To verify proposed array concept, two 1$\times$2 arrays are designed and fabricated using standard 0.15 um gate length pHEMT MMIC process. The circuits are mounted in an oversized waveguide and measured. The first array shows 0.5 dBm at 56.372 GHz and the second one has an output of 5.85 dBm at 60.147 GHz.

• Journal of Satellite, Information and Communications
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• v.9 no.2
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• pp.7-11
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• 2014

In this paper, we designed resistive MMIC mixer using $0.5{\mu}m$ p-HEMT process. This Mixer is designed to have a similar performance in -4 ~ 4 dBm local oscillator signal power level and to maintain a constant conversion loss and linear performance due to the variation of local signal. In order to have such characteristics, we designed new feedback circuit topology by using FET, and minimized performance change for LO signal power level variation, also obtain MMIC mixer characteristics which is able to apply in wideband. In the design result, When the LO signal power is -4 ~ 4 dBm, there was 6 dB conversion loss and it came up with the excellent result that IIP3 got over 30 dBm in 0.5 ~ 2.6GHz frequency band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.227-231
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• 2004

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the schottky diode of InGaAs/CaAs p-HEMT process has been developed for receiver down converter of Ka-band. A different approach of MMIC mixer structure is applied for reducing the chip size by the exchange of ports between IF and LO. This MMIC covers with RF (30.6∼31.0㎓)and IF (20.8∼21.2㎓). According to the on-wafer measurement, the MMIC mixer with miniature size of 3.0mm1.5mm demonstrates conversion loss below 7.8㏈, LO-to-RF isolation above 27㏈, LO-to-IF isolation above 19㏈ and RF-to-IF isolation above 39㏈, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.159-168
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• 2012

In this paper, a W-band single-chip receiver MMIC for FMCW(Frequency-modulated continuous-wave) radar is presented using $0.15{\mu}m$ GaAs pHEMT technology. The receiver MMIC consists of a 4-stage low noise amplifier(LNA), a down-converting mixer and a 3-stage LO buffer amplifier. The LNA is designed to exhibit a low noise figure and high linearity. A resistive mixer is adopted as a down-converting mixer in order to obtain high linearity and low noise performance at low IF. An additional LO buffer amplifier is also demonstrated to reduce the required LO power of the W-band mixer. The fabricated W-band single-chip receiver MMIC shows an excellent performance such as a conversion gain of 6.2 dB, a noise figure of 5.0 dB and input 1-dB compression point($P_{1dB,in}$) of -12.8 dBm, at the RF frequency of $f_0$ GHz, LO input power of -1 dBm and IF frequency of 100 MHz.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.305-308
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• 1999

In this paper, a transimpedance optical receiver based on PIN/P-HEMT with cascoded input stage and inductor peaking technique was designed for several giga bits optical communication. Analysis of the receiver shows that cascoded input stage with inductor peaking increase bandwidth without sacrificing low frequence gain. The receiver achieved a low noise characteristic and maximally flat frequence response. It is shown that the 3-dB bandwidth of the designed receiver is 8.3 ㎓ and input equivalent noise current is as low as 16pA/√Hz to 10㎓.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.5
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• pp.504-514
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• 2014

An MMIC multi-function chip with a low DC power consumption for an X-band active phased array radar system has been designed and fabricated using a 0.5 ${\mu}m$ GaAs p-HEMT commercial process. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a compact size of $16mm^2(4mm{\times}4mm)$ exhibits a gain of 10 dB and a P1dB of 14 dBm from 7 GHz to 11 GHz with a DC low power consumption of only 0.6 W. The RMS(Root Mean Square) errors for the 64 states of the 6-bit phase shift and attenuation were measured to $3^{\circ}$ and 0.6 dB, respectively over the frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.538-544
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• 2011

This paper presents a compact single balanced diode mixer fabricated using a 0.1 ${\mu}M$ GaAs p-HEMT commercial process for an E-band frequency up/down converter. This mixer includes a LO balun employing a Marchand balun with a good RF performance. In order to improve the port-to-port isolation, a high pass filter and a low pass filter are include in this mixer at the RF and IF ports, respectively. The fabricated mixer with a very compact size of 0.58 mm2(0.85 mm${\times}$0.68 mm) exhibits a conversion loss of 8～12 dB and an input P1dB of 1～5 dBm at the LO power of 10 dBm from 71～86 GHz.