• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.41-48
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• 1993

An ISFET urea sensor was fabricated by immobilizing the urease using polyurethane on the $H^{+}$ sensing $Si_{3}N_{4}$ thin film of pH-ISFET. The sensor could determine the urea concentration $1{\sim}50$ mg/dl with fast response of $3{\sim}5$ min. and good repeatability. For its application to clinical analysis, the results of the urea measurements in blood plasma using ISFET urea sensor were compared with these of conventional Urease-Indophenol method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.125-128
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• 2012

We fabricated the electrolyte-insulator-semiconductor (EIS) devices with various high-k sensing membranes to realize a high quality pH sensor. The sensing properties of each high-k dielectric material were compared with those of conventional $SiO_2$ (O) and $SiO_2/Si_3N_4$ (ON) membranes. As a result, the high-k sensing membranes demonstrated better sensitivity and stability than the O and ON membranes. Especially, the $SiO_2/HfO_2$ (OH) stacked layer showed a high sensitivity and the $SiO_2/Al_2O_3$ (OA) stacked layer exhibited an excellent chemical stability. In conclusion, the high-k sensing membranes are expected to have excellent operating characteristics in terms of sensitivity and chemical stability for the biosensor application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.762-765
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• 2003

에틸렌글리콜(ethyleneglycol)을 이용한 폴리비닐에테르(polyvinyl ether)와 같은 고분자물질을 활용하여 Co$^{30}$ 방사선원으로부터 ${\gamma}$선을 조사시켜, 고분자 물질의 성질을 변화시킴으로써 화학, 전기전자, 환경 및 기타 여러 가지 응용분야에 적용하여 이용할 수 있는 기술을 개발하였다. 이를 바탕으로 관련재료의 단량체(monomer)로부터 중합체(polymer)를 합성하여 water swelling을 시키는 과정에서 각종 (금속) 이온을 흡입-제거하는 방법의 환경복원기술, 흡입 금속이온을 표면에 밀집시켜 금속막을 형성하는 응용기술, 생체조직의 대용물질로 활용하는 의용공학 및 열감지특성(thermal sensitive property) 또는 pH 감지특성(pH sensitive property)을 이용하여 의용기술에 적용하는 polymer 응용기술 등의 폭넓은 활용을 위하여 그 일환으로 전도성 고분자 제조기술로의 활용가능성을 연구하였다.

• Prospectives of Industrial Chemistry
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• v.24 no.6
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• pp.32-40
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• 2021

세포 투과성 펩타이드(cell penetrating peptide; CPP)는 강력한 세포막 투과성을 보유하고 있어 난투과성 중거대분자 약물의 세포 내 전달체 개발에 있어 중요한 요소 기술로 부각되고 있다. 하지만 대부분의 세포 투과성 펩타이드는 타겟 세포에 대한 선택성 없이 투과하므로, 전신 투여시 심각한 부작용이 발생할 수 있다. 이 글에서는 선택적 세포 투과성 펩타이드를 개발하는 최근 연구 전략 중, 타겟 세포 표면에 존재하는 수용체에 결합하는 리간드를 이용한 전략과, 타겟 세포 주변의 물리, 화학, 생물학적 신호 변화를 이용하는 전략에 대해 소개한다. 특히, 최근 논문에 발표된, 어피버디(affibody)와 세포 투과성 펩타이드 결합체를 이용하여 HER2 수용체를 지닌 유방암 세포에 선택적 투과성을 부여하는 방법과, 암세포 주변의 작은 pH 변화를 감지하여 양전하성을 조절함으로써 수용체가 없는 유방암 세포에도 선택적으로 투과성을 보이는 방법에 대해 자세하게 소개한다.

• Journal of Life Science
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• v.21 no.7
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• pp.1032-1038
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• 2011

Recently identified Ciona intestinalis voltage sensor-containing phosphatase (Ci-VSP) consists of an ion channel-like transmembrane domain (VSD) and a phosphatase-like domain. Ci-VSP senses the change of membrane potential by its VSD and works as a phosphoinositide phosphatase by its phosphatase domain. In this study, we present the construction of His-tagged phosphatase-like domain of Ci-VSP, its recombinant expression and purification, and its enzymatic activity behavior in order to examine the biochemical behavior of phosphatase domain of Ci-VSP without interference. We found that Ci-VSP(248-576)-His can be eluted with an elution buffer containing 25 mM NaCl and 100 mM imidazole during His-tag purification. In addition, we found the proper measurement condition for kinetics study of Ci-VSP(248-576)-His against p-nitrophenyl phosphate (pNPP). We measured the kinetic constant of Ci-VSP(248-576)-His at $37^{\circ}C$, pH 5.0 or 5.5, under 30 min of reaction time, and less than $2.0\;{\mu}g$ of protein amount. With these conditions, we acquired that Ci-VSP(248-576)-His has $K_m$ of $354{\pm}0.143\;{\mu}M$, $V_{max}$ of $0.0607{\pm}0.0137\;{\mu}mol$/min/mg and $k_{cat}$ of $0.359{\pm}0.009751\;min^{-1}$ for pNPP dephosphorylation. Therefore, we produced a pure form of Ci-VSP(248-576)-His, and this showed a higher activity against pNPP. This purified protein will provide the road to a structural investigation on an interesting protein, Ci-VSP.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.40-44
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• 1998

The LAPS device of fast response and high sensitivity, based on electrochemical potential difference, and its system were fabricated for the precise measurement of pH changes and its characteristic were investigated. The electrostatic variation characteristics of LAPS according to the pH changes and parameters in the device were verified through a simulation using LAPS equivalent circuit model. The LAPS device and its system were fabricated on the basis of the result of simulation. The fabricated LAPS system showed linear sensitivity (about 56 mV/pH within the range of pH 2 to pH 11. In order to overcome the defect of general urea sensor (especially slow response time), urease immobilized nitrocellulose membrane was attached on the LAPS and resulted in the very fast response time, 0.29 mV/sec, 0.86 mV/sec at urea concentration of $50{\mu}g/ml,\; 500{\mu}g/ml$, respectively. And also in order to measure the uranyl ion, the uranyl ion selective sensing membrane with calix[6]arene derivative was used and its sensitivity was 25mV/concentration decade in the wide uranyl ion concentration range of $10^{-11}M\;to\;10^{-4}M$.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.233-237
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• 2013

We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used $SiO_2/HfO_x$ (OH) layer as a sensing membrane. In this work, $HfO_x$ sensing membranes were deposited on 5 nm thick $SiO_2$ buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of $HfO_x$ sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick $HfO_x$ membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.

• Applied Chemistry for Engineering
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• v.26 no.1
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• pp.116-119
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• 2015

Field-effect transistor (FET)-based ion or biosensors have been intensively studied so far. Among many measurement methods, the variation of the drain current can be induced when ions or biomolecules are interacted with sensing membranes located on the gate insulator of FET. One of typical FET-type sensors is an ion-sensitive field-effect transistor (ISFET) utilized in this study. In ISFET, the voltage is usually applied to the reference electrode instead of the gate voltage. Firstly, the voltage applied to the reference electrode versus the drain current was observed, and the steepest slope in this graph was found. Using this point, the optimized condition was established for the larger variation of the drain current in the saturated region in response to the variation of the input in the dynamic range.

• Journal of Sensor Science and Technology
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• v.8 no.4
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• pp.320-326
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• 1999

A small cartridge, with a nozzle system for washing off the dirt from the surfaces of sensing gates, was fabricated. The proposed nozzle structure was designed for cartridge by using the simulation tool of fluid (CFD-ACE). Whole size of the fabricated cartridge by using micromachining techniques is about $2.6\;cm{\times}1.5\;cm$, the size of the washing nozzle is $0.2\;mm{\times}0.6\;mm$ and its dead volume is only about $20\;{\mu}l$. A micro-reference electrode was achieved by employing a differential system with ISFETs/QRE (quasi-reference electrode)/REFET (reference field-effect transistor). Metal electrodes was deposited at both ends of blowing channel were used to check the presence of bubble in the microchannel. The pH-ISFET was inserted into the fabricated cartridge and the washing effect of the nozzle system in cartridge was invested.