Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thickness Optimization of SiO2/Al2O3 Stacked Layer for High Performance pH Sensor Based on Electrolyte-insulator-semiconductor Structure

SiO2/Al2O3 적층 감지막의 두께 최적화를 통한 고성능 Electrolyte-insulator-semiconductor pH 센서의 제작

  • Gu, Ja-Gyeong (Department of Materials Engineering, Kwangwoon University) ;
  • Jang, Hyun-June (Department of Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Materials Engineering, Kwangwoon University)
  • 구자경 (광운대학교 전자재료공학과) ;
  • 장현준 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Received : 2011.12.14
  • Accepted : 2011.12.24
  • Published : 2012.01.01
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Abstract

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

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References

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