• Journal of the Korean Society of Clothing and Textiles
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• 제25권6호
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• pp.1155-1166
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• 2001

The purposes of this research were 1) to identify shopping orientation according to customer's personality type, 2) to examine perceived importance of service and satisfaction of service related to customer's personality type, 3) to find the relationships of evaluation of salesperson's service and re-purchase intention in each of customer's personality types. The data were collected via self-administered questionnaires from 434 female formal wear shoppers. and were analyzed by frequency, factor analysis, ANOVA, Chi-square test, and multiple regression analysis. The results of this study were as follows: Shopping orientations varied according to customer's personality type. E type had stronger Hedonic/self-confidence than I type, F type had higher Depending decision making than T type and P type had higher Quick decision making than J type. And service items satisfied the customers with a certain personality type. E type was satisfied with timely and proper A/S, not forcing to purchase and trustful behavior of salesperson more than I Type was. And also with expertise, individualized care, polite attitude, and merchandising promotion. N type was satisfied with individualized care more than S type was. A service evaluation criterion affected the re-purchase intention for a customer with a certain personality type. Customer's convenience in E. I. S, N, T, F, J types had a significant effect on re-purchase intention. And Expertise/ care in E, N, T, J types had a positive effect on re-purchase intention. also Politeness in E, I, S, N, T, J, P types did. But in only E type, Merchandising promotion affected re-purchase intention.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Journal of the Chungcheong Mathematical Society
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• 제24권4호
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• pp.807-824
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• 2011

It has been proved that if $\mathbb{X}^{(s,s)}$ is the union of two linear star-configurations in $\mathbb{P}^2$ of type $s{\times}s$, then $(I_{\mathbb{X}^{(s,s)}})_s{\neq}\{0\}$ for s = 3, 4, 5, and $(I_{\mathbb{X}^{(s,s)}})_s=\{0\}$ for $s{\geq}6$. We extend $\mathbb{P}^2$ to $\mathbb{P}^n$ and show that if $\mathbb{X}^{(s,s)}$ is the union of two linear star-configurations in $\mathbb{P}^n$, then $(I_{\mathbb{X}^{(s,s)}})_s=\{0\}$ for $n{\geq}3$ and $s{\geq}3$. Using this generalization, we also prove that the secant variety $Sec_1(Split_s(\mathbb{P}^n))$ has the expected dimension 2ns + 1 for $n{\geq}3$ and $s{\geq}3$.

• Journal of Sensor Science and Technology
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• 제1권1호
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• pp.5-12
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• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

• Journal of Nutrition and Health
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• 제40권3호
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• pp.211-220
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• 2007

The purpose of this study was to investigate that the effect of dietary fatty acid composition on pro- and macro-glycogen utilization and resynthesis. The analyses were further extended for different muscle fibers (type I, type II, & type IIb) as well as tissues (i.e., liver & heart). Total one hundred sixty Sprague-Dawley rats were used, and rats were randomly allocated into four experimental groups: animals fed standard chow diet (n=40), animals fed saturated fatty acid diet (n=40), animals fed monounsaturated fatty acid (n=40), and animals fed polyunsaturated fatty acid (n=40). Animals in each groups were further divided into five subgroups: sacrificed at REST (n=8), sacrificed at immediately after 3 hr swim exercise (P-0HR, n=8), sacrificed at one hour after 3 hr swim exercise (P-1HR, n=8), sacrificed at four hour after 3 hr swim exercise (P-4HR, n=8), and sacrificed at twenty-four hour after 3 hr swim exercise (P-24HR, n=8). Soleus (type I), red gastrocnemius (type IIa), white gastrocnemius (type IIb), liver, and heart were dissected out at appropriated time point from all animals, and were used for analyses of pro- & macro-glycogen concentrations. After 8 weeks of dietary interventions, there was no significant difference in body mass in any of dietary conditions (p>.05). After 3 hr swim exercise, blood lactate level was higher compared to resting conditions in all groups, but it was returned to resting value after 1 hr rest (p<.05). Free fatty acid concentration was higher in all high fat fed groups(regardless of fatty acid composition) than CHOW consumed group. At rest, pro- & macro-glycogen concentration was not different from any of experimental groups (p>.05). Regardless of forms of glycogen, the highest level was observed in liver (p<.01), and most cases of supercompensation after 3hr exercise observed in this study were occurred in CHOW fed tissues. Except heart muscle, all tissues used in this study showed that pro- and macro-glycogen concentration was significantly decreased after 3 hr exercise. Based on these results, two conclusions were made: first, there is no different level of glycogen content in various tissues regardless of types of fatty acids consumed and second, the highest mobilization rate would be demonstrated from CHOW fed animals compare to animals that consumed any kinds of fatty acid diet if prolonged exercise is applied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of the Korean Mathematical Society
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• 제47권1호
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• pp.135-163
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• 2010

Motivated by [Science in China (Ser. A Mathematics) 36 (2006), no. 7, 721?732], this article deals with the following discrete type BVP $\LARGE\left\{{{\;{\Delta}[{\phi}({\Delta}x(n))]\;+\;f(n,\;x(n\;+\;1),{\Delta}x(n),{\Delta}x(n + 1))\;=\;0,\;n\;{\in}\;[0,N],}}\\{\;{x(0)-{\sum}^m_{i=1}{\alpha}_ix(n_i) = A,}}\\{\;{x(N+2)-\;{\sum}^m_{i=1}{\beta}_ix(n_i)\;=\;B.}}\right.$ The sufficient conditions to guarantee the existence of at least three positive solutions of the above multi-point boundary value problem are established by using a new fixed point theorem obtained in [5]. An example is presented to illustrate the main result. It is the purpose of this paper to show that the approach to get positive solutions of BVPs by using multifixed-point theorems can be extended to treat nonhomogeneous BVPs. The emphasis is put on the nonlinear term f involved with the first order delta operator ${\Delta}$x(n).

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.65-66
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• 2008

The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201 $cm^2V^{-1}s^{-1}$ and low resistivity of $0.0454\Omega{\cdot}cm$ with hole concentration of $1.145\times10^{17}cm^{-3}$. The photoluminescence(PL) spectra show the emissions related to FE, DAP and defects of $V_{Zn}$, $V_O$, $Zn_O$, $O_i$ and $O_{Zn}$.

• Proceedings of the KIEE Conference
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1332_1333
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• 2009

The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.