• Bulletin of the Korean Mathematical Society
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• v.46 no.1
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• pp.35-43
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• 2009

We say that an isometric immersed hypersurface x : $M^n\;{\rightarrow}\;{\mathbb{R}}^{n+1}$ is of $L_k$-finite type ($L_k$-f.t.) if $x\;=\;{\sum}^p_{i=0}x_i$ for some positive integer p < $\infty$, $x_i$ : $M{\rightarrow}{\mathbb{R}}^{n+1}$ is smooth and $L_kx_i={\lambda}_ix_i$, ${\lambda}_i\;{\in}\;{\mathbb{R}}$, $0{\leq}i{\leq}p$, $L_kf=trP_k\;{\circ}\;{\nabla}^2f$ for $f\;{\in}\'C^{\infty}(M)$, where $P_k$ is the kth Newton transformation, ${\nabla}^2f$ is the Hessian of f, $L_kx\;=\;(L_kx^1,\;{\ldots},\;L_kx^{n+1})$, $x=(x^1,\;{\ldots},\;x^{n+1})$. In this article we study the following(hyper)surfaces in ${\mathbb{R}}^{n+1}$ from the view point of $L_1$-finiteness type: totally umbilic ones, generalized cylinders $S^m(r){\times}{\mathbb{R}}^{n-m}$, ruled surfaces in ${\mathbb{R}}^{n+1}$ and some revolution surfaces in ${\mathbb{R}}^3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• Journal of The Korean Astronomical Society
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• v.47 no.1
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• pp.1-13
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• 2014

We analyze the dependence of disk morphology (arm class, Hubble type, bar type) of nearby spiral galaxies on the galaxy environment by using local background density (${\Sigma}_n$), projected distance ($r_p$), and tidal index (T I) as measures of the environment. There is a strong dependence of arm class and Hubble type on the galaxy environment, while the bar type exhibits a weak dependence with a high frequency of SB galaxies in high density regions. Grand design fractions and early-type fractions increase with increasing ${\Sigma}_n$, $1/r_p$, and T I, while fractions of flocculent spirals and late-type spirals decrease. Multiple-arm and intermediate-type spirals exhibit nearly constant fractions with weak trends similar to grand design and early-type spirals. While bar types show only a marginal dependence on ${\Sigma}_n$, they show a fairly clear dependence on $r_p$ with a high frequency of SB galaxies at small $r_p$. The arm class also exhibits a stronger correlation with $r_p$ than ${\Sigma}_n$ and T I, whereas the Hubble type exhibits similar correlations with ${\Sigma}_n$ and $r_p$. This suggests that the arm class is mostly affected by the nearest neighbor while the Hubble type is affected by the local densities contributed by neighboring galaxies as well as the nearest neighbor.

• Journal of Oral Medicine and Pain
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• v.36 no.1
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• pp.25-37
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• 2011

The purpose of this study is to investigate the relationship between personality type and symptoms and contributing factors of temporomandibular disorders. 199 college students completed the MBTI(Myers-Briggs Type Indicator) and a questionnaire and collected data were analyzed by SAS 9.2 program. The obtained results were as follows : 1. The prevalence of symptoms of temporomandibular disorders and mean scales of positive answers of contributing factors appeared to be higher in I type, S type, T type, P type than in E type, N type, F type, J type. 2. ISTP and ISFP among 16 types of personality seemed to have higher prevalence of symptoms and contributing factors of temporomandibular disorders than other types of personality. 3. Symptom of TMJ pain during mouth opening seemed to occur more frequently in I type, S type, F type, J type than in E type, N type, T type, P type. 4. Contributing factors including clenching and stressful state occurred significantly more frequently in I type than E type. Gum chewing habit occurred significantly more frequently in E type than in I type. 5. Unilateral chewing habit occurred significantly more frequently in J type than in P type. 6. Nervous or sensitive persons had significantly higher mean scales of positive answers of subjective symptoms than relaxed or general persons. 7. General persons had significantly lower mean scales of positive answers of contributing factors than nervous, sensitive and relaxed persons. In conclusion, these results show that there is the relationship between personality and temporomandibular disorders and patient education and counselling considering personality type may contribute to treating patients with temporomandibular disorders.

• Bulletin of the Korean Mathematical Society
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• v.34 no.4
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• pp.549-560
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• 1997

For positive integers $n_i \geq 2, i = 1, 2, 3, 4$, such that $\Sigma \frac{n_i}{1} < 2$, there exists a quadrilateral $P = P_1 P_2 P_3 P_4$ in the hyperbolic plane $H^2$ with the interior angle $\frac{n_i}{\pi}$ at $P_i$. Let $\Gamma \subset Isom(H^2)$ be the (discrete) group generated by reflections in each side of $P$. Then the quotient space $H^2/\gamma$ is a differentiable orbifold of type $(^* n_1 n_2 n_3 n_4)$. It will be shown that the deformation space of $Rp^2$-structures on this orbifold can be mapped continuously and bijectively onto the cell of dimension 4 - \left$\mid$ {i$\mid$n_i = 2} \right$\mid$$.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.257-262
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• 2003

The structure and optical properties of n-type and p-type porous silicon (PS) prepared by the chemical etching in the light and the dark, respectively, are reported in this paper. Microstructural features of the samples are mainly investigated by SEM, AFM XRDGI techniques. Also, their optical properties are investigated by photoluminescence (PL) and Fourier transform infrared absorption measurements. In the n-type PS, the room temperature photoluminescence is observed in a visible range from 500 nm to 650 nm in contrast to that in the blue region (400∼650 nm) in p-type PS. Further, semi-transparent Cu films in thickness range of ∼40 nm are deposited by rf-magnetron sputtering on PS to investigate the I-V characteristics of the samples.

• Journal of the Korean Mathematical Society
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• v.36 no.6
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• pp.1133-1143
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• 1999

Chaterji strengthened version of a theorem for martin-gales which is a generalization of a theorem of Marcinkiewicz proving that if $X_n$ is a sequence of independent, identically distributed random variables with $E{\mid}X_n{\mid}^p\;<\;{\infty}$, 0 < P < 2 and $EX_1\;=\;1{\leq}\;p\;<\;2$ then $n^{-1/p}{\sum^n}_{i=1}X_i\;\rightarrow\;0$ a,s, and in $L^p$. In this paper, we probe a version of law of large numbers for double arrays. If ${X_{ij}}$ is a double sequence of random variables with $E{\mid}X_{11}\mid^log^+\mid X_{11}\mid^p\;<\infty$, 0 < P <2, then $lim_{m{\vee}n{\rightarrow}\infty}\frac{{\sum^m}_{i=1}{\sum^n}_{j=1}(X_{ij-a_{ij}}}{(mn)^\frac{1}{p}}\;=0$ a.s. and in $L^p$, where $a_{ij}$ = 0 if 0 < p < 1, and $a_{ij}\;=\;E[X_{ij}\midF_[ij}]$ if $1{\leq}p{\leq}2$, which is a generalization of Etemadi's marcinkiewicz-type SLLN for double arrays. this also generalize earlier results of Smythe, and Gut for double arrays of i.i.d. r.v's.

• Journal of the Korean Mathematical Society
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• v.47 no.6
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• pp.1147-1165
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• 2010

In this paper we compare a torsion free sheaf F on $P^N$ and the free vector bundle $\oplus^n_{i=1}O_{P^N}(b_i)$ having same rank and splitting type. We show that the first one has always "less" global sections, while it has a higher second Chern class. In both cases bounds for the difference are found in terms of the maximal free subsheaves of F. As a consequence we obtain a direct, easy and more general proof of the "Horrocks' splitting criterion", also holding for torsion free sheaves, and lower bounds for the Chern classes $c_i$(F(t)) of twists of F, only depending on some numerical invariants of F. Especially, we prove for rank n torsion free sheaves on $P^N$, whose splitting type has no gap (i.e., $b_i{\geq}b_{i+1}{\geq}b_i-1$ 1 for every i = 1,$\ldots$,n-1), the following formula for the discriminant: $$\Delta(F):=2_{nc_2}-(n-1)c^2_1\geq-\frac{1}{12}n^2(n^2-1)$$. Finally in the case of rank n reflexive sheaves we obtain polynomial upper bounds for the absolute value of the higher Chern classes $c_3$(F(t)),$\ldots$,$c_n$(F(t)) for the dimension of the cohomology modules $H^iF(t)$ and for the Castelnuovo-Mumford regularity of F; these polynomial bounds only depend only on $c_1(F)$, $c_2(F)$, the splitting type of F and t.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.126-133
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• 1994

Doping effects and semiconductor behaviors of the dispersed p- and n-Si, p- and n- GaAs particles in the aqueous electrolyte have been studied using microelectrophoretic, voltammetric and chronoamperometric techniques. The cations (K$^{+}$) are adsorbed on both the p- and n- Si particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are negatively charged acceptor states. On the other hand, the anions (CI$^{-}$) are adsorbed on both the p- and n- GaAs particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are positively charged donor states. Under the same conditions, electrophoretic mobilities, electrochemical processes, doping effects and related semiconductor behaviors of the Si and the GaAs particles are similar regardless of the doping profiles, i. e. dopants and doping concentrations. The doping effects and related semiconductor behaviors of the dispersed p- and n- type semiconductor particles are gradually lost with decreasing dimensions.

• Bulletin of the Korean Mathematical Society
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• v.32 no.2
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• pp.329-336
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• 1995

Let $A_1, A_2, \ldots, A_n$ be a sequence of events on a given probability space and let $m_n$ be the number of those A's which occur. Put $S_{0,n} = 1$ and $$ S_{k,n} = \Sigma P(A_i_1 \cap A_i_2 \cap \cdots \cap A_i_k), (a \leq k)$$ where the summation is over all subscripts satisfying $1 \let i_1 < i_2 < \cdots < i_k \leq n$.