• Korean Journal of Materials Research
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• v.8 no.7
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• pp.579-583
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• 1998

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.165-169
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• 2002

Silicon wafer is very important accuracy make use semiconductor device substrate. In this research, for the uniformity dopant density distribution obtained to Neutron Transmutation Doping on make use Si in P Doping study work. In this research. we irradiated neutron on FZ silicon wafers which had high resistivity (1000~2000 ${\Omega}$cm), HANARO reactor was utilized resistivity changes due to observed, the generation of neutron irradiation on point defect analyzed, point defect on resistivity changes inquire into the effect. Before neutron irradiation theoretical due to calculated 5 ${\Omega}$-cm, 20.1 ${\Omega}$-cm for HTS hole and 5 ${\Omega}$-cm, 26.5 ${\Omega}$-cm, 32.5 ${\Omega}$-cm for IP3 hole. After neutron irradiation through SRP measurement the designed resistivities were approached, which were 2.1 H-cm for HTS-1, 7.21 ${\Omega}$-cm for HTS-2, 1.79 ${\Omega}$-cm for IP-1, 6.83 ${\Omega}$-cm for IP-2, 9.23 ${\Omega}$-cm for IP-3, respectively. Also after neutron irradiation resistivity changes due to thermal neutron dependent irradiation hole types free.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.27-28
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• 2014

투명전극이란 전기 전도도를 갖는 동시에 가시광선 영역에서 빛을 투과하는 성질을 가지는 소재이다. 일반적으로 가시광선 영역(380nm~780nm)에서 80%이상의 광 투과도를 가지며, 비저항이 $10^{-3}{\Omega}{\cdot}cm$ 이하, optical band gap 이 3.3 eV 이상인 물질을 TCO(Transparent Conducting oxide)라고 한다. 현재까지 국내의 TCO 관련 연구는 터치패널, 디스플레이, 태양전지 등 광전자분야에서 가장 널리 사용되고 있는 ITO(Sn:In2O3)에 치중되어 있으며, 관련 연구도 거의 디스플레이 맞춤형 연구개발이 주류를 이루어왔다. ITO가 전기전도성이 우수하고 동시에 가시광선 영역에서의 투과율도 80%이상으로 전기적, 광학적 특성이 우수하다는 장점을 가지고 있으나, In의 희소성으로 인한 고가격, 유독성, 접착력 문제 때문에 이를 대체하기 위해 제조원가가 ITO에 비하여 월등히 저렴하고 내화학성과 내마모성이 우수하면서도, 가시광선 영역에서의 광투과율이 80%이상으로 좋다는 $SnO_2$에 관한 연구가 활발히 진행되어 왔다. 적절한 dopant를 첨가하여 $SnO_2$자체의 높은 광학적 투과도를 유지하면서 전기전도성을 더 높일수 있고, 투명전극이 가져야 할 고온 안정성을 가지고 있으며 비독성이고 수소 플라즈마에 대한 내성이 더 클 뿐만 아니라 저온에서 성장이 가능하다. $SnO_2$의 전기 전도도를 높이기 위한 Al, In, Ga, B와 같은 3족 원소가 $SnO_2$의 n형 dopant로 널리 사용되고 있다. 그 중 Al은 반응성이 커서 박막 증착 중에 산화되기 쉬운 반면, 전기적 특성 및 광학적 특성의 향상을 이룰 수 있다. 본 연구에서는 Rf Sputtering법을 사용하여 quartz기판 위에 다층박막 형태의 투명전도막을 제작한 후, 열처리를 수행, 이에 의한 다층박막 내 계면간 상호확산 현상을 이용하여 투명 전도막의 특성변화를 관찰하였다. 박막의 구조적 특성은 XRD장비를 사용하여 분석하였으며, 전기적, 광학적 특성은 각각 표면저항기, 홀 측정 장비, 그리고 UV-VIS-NI를 사용하여 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.97-98
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. Phosphorus (P) and arsenic (As) were diffused into about 2.1${\mu}m$ ZnO thin films sputtered by RF magnetron sputtering system mn ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and 700$^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is 700$^{\circ}C$, 3hr Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.49-54
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• 2020

We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs₂ semiconductor by using the first-principles calculations. The chalcopyrite AlGaP₂, AlGaAsP, and AlGaAs₂ compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.511-515
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• 2013

A Monte Carlo (MC) simulation study has been done in order to investigate the effects of line-edge-roughness (LER) induced by either 1P1E (single-patterning and single-etching) or 2P2E (double-patterning and double-etching) on fully-depleted silicon-on-insulator (FDSOI) tri-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). Three parameters for characterizing the LER profile [i.e., root-mean square deviation (${\sigma}$), correlation length (${\zeta}$), and fractal dimension (D)] are extracted from the image-processed scanning electron microscopy (SEM) image for each photolithography method. It is experimentally verified that two parameters (i.e., ${\sigma}$ and D) are almost the same in each case, but the correlation length in the 2P2E case is longer than that in the 1P1E case. The 2P2E-LER-induced $V_TH$ variation in FDSOI tri-gate MOSFETs is smaller than the 1P1E-LER-induced $V_TH$ variation. The total random variation in $V_TH$, however, is very dependent on the other major random variation sources, such as random dopant fluctuation (RDF) and work-function variation (WFV).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1581-1584
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• 2008

In dual-polycide-gate structure with butting contact, net doping concentration of polysilicon was decreased due to overlap between $n^+$ and $p^+$ and lateral dopant diffusion in silicide/polysilicon layers. The generation of parasitic Schottky diode in butting contact region is attributed both to the $CoSi_2$-loss due to $CoSi_2$ agglomeration and to the decrease in net doping concentration of polysilicon layer. Parasitic Schottky diode reduces noise margin of sense amplifier in DDI DRAM, which causes column fail. The column fail could be reduced by physical isolation of $n^+/p^+$ polysilicon junction or suppressing $CoSi_2$ agglomeration by using nitrogen implantation into $p^+$ polysilicon before $CoSi_2$ formation.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.265-268
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• 2004

We have developed a highly efficient and stable blue organic electroluminescent device (OLED) based on the blue fluorescent p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-Ph) dopant in a morphologically stable high-bandgap host material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN), which achieved an EL efficiency of 9.7 cd/A and 5.5 lm/W at 20 mA/$cm^2$ and 5.7 V with a Commission Internationale d'Eclairage coordinates of(x = 0.16, y = 0.32). This sky blue device which could also alleviate the problematic current induced quenching at high current achieved a half-decay lifetime ($t_{1\;2}$) of 46,000 h at an initial brightness of 100 cd/$m^2$.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.238-241
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• 1996

New porous BaTiO$_3$ thermistors were fabricated using graphite powders (0 to 10 wt. %) and their porosities were in the range of 9.1% to 16.2%. As results of impedance analysis, it was confirmed that the pores affected the grain-boundary resistance and the bulk (grain interior) resistance was constant as about 25 $\Omega$ at room temperature. The magnitude of PTCR effect $(p_{max}/p)$ markedly increased from 3 orders to 7 orders without addition of any acceptor dopant such as Mn or Cr.