• Solar Energy
• /
• v.8 no.1
• /
• pp.41-48
• /
• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.3
• /
• pp.89-92
• /
• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

• Journal of the Korean Society of Safety
• /
• v.20 no.4 s.72
• /
• pp.29-33
• /
• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• Journal of Electrochemical Science and Technology
• /
• v.10 no.2
• /
• pp.244-249
• /
• 2019

SiO has a high theoretical capacity as a promising anode material candidate for high-energy-density Li-ion batteries. However, its practical application is still not widely used because of the large volume change that occurs during cycling. In this report, an active material containing a mixture of SiO and graphite was used to improve the insufficient energy density of the conventional anode with the support of multidimensional conducting agents. To relieve the isolation of the active materials from volume changes of SiO/graphite electrode, two types of conducting agents, namely, 1-dimensional VGCF and 0-dimensional Super-P, were introduced. The combination of VGCF and Super-P conducting agents efficiently maintained electrical pathways among particles in the electrode during cycling. We found that the electrochemical performances of cycleability and rate capability were greatly improved by employing the conducting agent combinations of VGCF and Super-P compared with the electrode using only single VGCF or single Super-P. We investigated the detailed failure mechanisms by using systematic electrochemical analyses.

• Proceedings of the KIEE Conference
• /
• 2002.07b
• /
• pp.1325-1327
• /
• 2002

$ITO_{(n)}/Si_{(p)}$ solar cell was fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The cell charateristics can be improved by annealing but are deteriorated at temperature above 650[$^{\circ}C$] for longer than 15[min].

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.486-489
• /
• 1987

For longterm conservation of the $Si_3N_4$ gate pH-ISFET, characteristics of ISFET surface treatment with HF and surface coating with paraffin wax were investigated.

• Journal of the Korean Society of Safety
• /
• v.18 no.3
• /
• pp.64-68
• /
• 2003

ITO_{(n)}/Si_{(p)}$ solar cell is fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The maximum output of fabricated solar cell is obtained when the composition of the thin film is consisted of indium oxide 91[mole %] and tin oxide 9(mole %). The solar cell electrical charateristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min].

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.143-144
• /
• 2007

저온 성장이 가능한 MOCVD를 이용하여 단결정 p-Si 기판위에 n-ZnO를 산소분압을 달리하여 성장하였다. 산소유량에 따른 이종접합 다이오드의 전기적 특성을 평가하기위하여 n-ZnO의 전기전도도, 이동도, 캐리어 농도를 측정하였으며, 소자에 저항성 접촉(ohmic contact) 전극을 형성하여 전류-전압 특성을 파악하였다.

• Development and Reproduction
• /
• v.12 no.2
• /
• pp.159-168
• /
• 2008

Nanog is a newly identified member of the homeobox family of DNA binding transcription factors that functions to maintain the undifferentiated state of stem cells. However, molecular mechanisms underlying the function of Nanog remain largely unknown. To elucidate the regulatory roles of Nanog involved in maintenance of P19 embryonal carcinoma (EC) stem cells, we transfected three small interfering RNA (siRNA) duplexes targeted against different regions of the Nanog gene into P19 cells. The Nanog siRNA-100 duplexes effectively decreased the expression of Nanog up to 30.7% compared to other two Nanog siRNAs, the Nanog siRNA-400 (67.9 %) and -793 (53.0%). When examined by RT-PCR and real-time PCR, the expression of markers for pluripotency such as Fgf4, Oct3/4, Rex1, Sox1 and Yes was downregulated at 48 h after transfection with Nanog siRNA-100. Furthermore, expression of the ectodermal markers, Fgf5 and Isl1 was reduced by Nanog knockdown. By contrast, the expression of other markers for pluripotency such as Cripto, Sox2 and Zfp57 was not affected by Nanog knockdown at this time. On the other hand, the expression of Lif/Stat3 pathway molecules and of the endoderm markers including Dab2, Gata4, Gata6 and the germ cell nuclear factor was not changed by Nanog knockdown. The results of this study demonstrated that the knockdown of Nanog expression by RNA interference in P19 cells was sufficient to modulate the expression of pluripotent markers involved in the self-renewal of EC stem cells. These results provide the valuable information on potential downstream targets of Nanog and add to our understanding of the function of Nanog in P19 EC stem cells.

• Korean Journal of Materials Research
• /
• v.27 no.1
• /
• pp.48-52
• /
• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.