• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.95-95
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• 2008

본 연구에서는 SiGe p-MOSFET을 제작하여 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성을 측정하였다. Si 기판위에 성장한 $Si_{0.88}Ge_{0.12}$으로 제작된 SiGe p-MOSFET의 채널은 게이트 산화막과 20nm 정도의 Si Spacer 층으로 분리되어 있다. 게이트 산화막은 열산화에 의해 70$\AA$으로 성장되었고, 게이트 폭은 $25{\mu}m$, 게이트와 소스/드레인 사이의 거리는 2.5때로 제작되었다. 제작된 SiGe p-MOSFET은 빠른 동작 특성, 선형성, 저주파 노이즈 특성이 우수하였다. 제작된 SiGe p-MOSFET의 ESD 에 대한 소자의 신뢰성과 내성을 연구하기 위하여 SiGe P-MOSFET에 ESD를 lkV에서 8kV까지 lkV 간격으로 가한 후, SiGe P-MOSFET의 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성 변화를 분석 비교하였다.

• Journal of Korea Foundry Society
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• v.22 no.1
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• pp.42-48
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• 2002

Effects of coating treatment of metallic Cu, Ni-P film on $SiC_p$, for $SiC_p$/iron aluminide composites were studied. Porous hybrid preforms were fabricated by reactive sintering after mixing the coated $SiC_p$, Fe and Al powders. Then the final composites were manufactured by squeeze casting after pouring AC4C Al alloy melts in preforms. The change of reactive temperature, density, microstructure of the preforms and microstructure of the composites were investigated. The exprimental results were summarized as follows. The thickness of Cu and Ni-P metallic layer formed on $SiC_p$ by electroless plating method were about $0.5{\mu}m$ and coated uniformly. There was no remakable change in the ignition temperature with variation of the mixing ratio of Fe and Al powder while in the case of coated $SiC_p$ it was lower about $20^{\circ}C$ than in the non-coated $SiC_p$. The maximum reaction temperature increased with increasing Al contents, but decreased with increasing $SiC_p$ contents. Expansion ratio of preform after reactive sintering increased with amount of Cu coated $SiC_p$. In the case of Fe-70at.%Al, the expansion ratio was about 7% up to 8wt.% of $SiC_p$, addition but further addition of $SiC_p$, increased the ratio significantly. And in the case of Fe-50 and 60at.%Al, it was about 20% up to 16wt.% of $SiC_p$ addition and about 28% in 24wt.% of $SiC_p$, addition. The microstructures of compounds showed that the grains became finer as amount of $SiC_p$, and mixing ratio of iron powder increased and the shape of compounds was changed gradually from irregular to spheroidal.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.180-186
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• 2023

Positive bias temperature instability (PBTI) degradation of n⁺ and p⁺ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n⁺/nMOSFET will be greater than p⁺/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p⁺/nMOSFET than for the n⁺/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p⁺ poly-Si gate accelerates the degradation of p⁺/nMOSFET. The carrier injection and trapping processes of the n⁺ and p⁺ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.433-440
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• 1993

The bioactivity of glasses in the CaO-SiO2 system and CaO-P2O5-SiO2 system with less than 10mol% of P2O5 was investigated by in vitro test in simulated body flood(SBF). The formation of Ca.P film and hydroxyapatite on the surface of glasses after in vitro test was analysed by X-ray photoelectron spectoscopy (XPS), fourier transform infrared reflection spectroscopy (FT-IRRS), energy dispersive X-ray spectroscopy (EDS), and scanning electron microscopy (SEM) observation. In the early stage of Ca.P film formation after in vitro test for CaO-SiO2 and CaO-P2O5-SiO2 glasses, the rate of Ca.P film formation on the surface of the glasses was dependent of structural parameter (Y) evaluated from the glass composition. First, in the case of the glasses having Y value below 2, Ca.P film and SiO2-rich layer were formed simultaneously, and there were no differences of the rate of Ca.P film formation in terms of the Y values. Second, in the case of the glasses having Y value above 2, the SiO2-rich layer was formed, and then Ca.P.Si mixed layer was formed in the silica gel structure of the SiO2-rich layer, and finally the Ca.P film on the surface of SiO2-rich layer. The rate of Ca.P film formation delayed as the Y values increased. The rate of hydroxyapatite formation of glasses (the rate of transformation from Ca.P film to hydroxyapatite) seems to be propotional to the rate of Ca.P film formation and Y value. The rate of hydroxyapatite formation of glasses belonging to the second group was delayed as structural parameter increased, and the hydroxyapatite crystal showed spherical growth in the early reaction stage, and then showed silkworm-like linear growth as the reaction time increased.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.729-738
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• 1992

The glass formation and structural change with the glass compositions were investigated in the CaO-P2O5-SiO2 system with less than 40 wt% of P2O5. The glass formation range was determined by XRD, SEM and EDS techniques for water quenched specimens. The structural analyses were made for binary CaO-SiO2 glasses and ternary CaO-P2O5-SiO2 glasses by using FT-IR and Raman spectroscopy. The glass formation was affected by CaO/SiO2 mole ratio, P2O5 content and primary crystalline phase. The stable glass formation range was found when the transformed CaO/SiO2 mole ratio (new factor derived from structural changes) was in the range of 0.72~1.15 with less than 10 mol% of P2O5. The structural analyses of CaO-SiO2 glasses indicated that as the CaO/SiO2 ratio was increased, the nonbridging oxygens in the structural unit of the glasses were increased. With addition of P2O5 to CaO-SiO2 glasses, the P2O5 enhanced the polymerization of [SiO4] tetrahedra unit in CaO-SiO2 glasses, which contained a large portion of nonbridging oxygen. The phosphate eliminated nonbridging oxygens from silicate species, forcing polymerization of silicate structures and produced in [PO4] monomer in glasses. When added P2O5 was kept constant, the structural change with various CaO/SiO2 ratio was very similar to that of CaO-SiO2 glasses.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.338.2-338.2
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• 2016

Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.1
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• pp.15-22
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• 1977

We have obtained a violet-sensitive photocell as a part of the developing project on such type of solar cell. The photocell has the structure of SnO2-SiO2-Si MOS coupled on Si n-p homojuction. It is not relevant to use as a solar cell because of its small photovoltaic power(0.25V, 150$mutextrm{A}$), however, since the spectral response of the cell is shifted toward the violet band region and its switching speed is fairly high in comparison with those of the Si p-n homojunction type solar cell, it is expected that we will be able to find mere novel utilities than the ordinary silicon photocell.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.110.2-110.2
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• 2011

일본 Sanyo 사에 의해서 획기적으로 HIT 태양전지가 개발된 바 있다. 이러한 HIT 태양전지는 기존의 확산-접합 Si 태양전지에 비해서 저비용 고효율의 장점을 갖는다: 22% 이상의 변환효율, $200^{\circ}C$ 이하의 공정온도, 낮은 태양전지 온도 의존도, 높은 개방전압. 한편 Sanyo사의 HIT 태양전지는 n-형 Si 웨이퍼를 이용한 반면에, 최근 미국 National Renewable Energy Laboratory는 p-형 Si 웨이퍼를 이용해서 변환효율 19% 대의 HIT 태양전지를 개발한 바 있다. 그 동안 지속적으로 p-형 Si HIT 태양전지를 고효율화하기(< 22%) 위해서 많은 노력이 진행되어 왔지만 이와 같은 노력에도 불구하고 아직 p-형 HIT는 n-형 HIT 태양전지에 비해서 다소 성능면에서 떨어져 있다. 본 연구는 n- 및 p-형 실리콘 웨이퍼로 구성된 HIT 태양전지의 물리적인 차이점에 초점을 맞추고, 결정 및 비정질 실리콘 층의 역할에 대해서 연구하였다. 특히 태양전지 효율을 향상시키는 요소들로서 결정 실리콘의 불순물 준위(n- 및 p-형) 또는 비저항, 비정질 실리콘으로 구성된 emitter 층, intrinsic 층, 경계면이 고려되었다. 그리고 이러한 요소들이 HIT 태양전지에 미치는 영향을 조사하기 위해서 AMPS-1D 컴퓨터 프로그램을 사용하였고, 이를 통해서 HIT 태양전지의 결정 및 비정질 실리콘 층의 역할을 물리적 정량적으로 분석하였다. 본 연구에 적용되는 HIT는 ITO/a-Si:H(p+)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n+) 및 ITO/a-Si:H(n+)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/a-Si:H(p+)의 구조로서 다음과 같은 태양전지 특성을 갖는다: n-형 HIT의 경우, fill factor ~ 0.78, 단락전류밀도 ~ 38.1 $mA/cm^2$, 개방전압 0.74 V, 변환효율 22.3 % (그리고 p-형 HIT의 경우, fill factor ~ 0.76, 단락전류밀도 ~ 36.5 $mA/cm^2$, 개방전압 0.69 V, 변환효율 19.4 %).

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.77-79
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• 2009

Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.