• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.5
• /
• pp.249-252
• /
• 2001

The paper represents the design and fabrication of an electrostatic micro actuator with $p^+$,/TEX> Si cantilevers. The micro actuator consists of a plate suspended by four $p^+$,/TEX> silicon cantilevers and an electrode on a glass substrate. The $p^+$,/TEX> Si structure is fabricated by the boron diffusion process and the anisotropic wet etch process. The cantilevers of the micro actuator curl down because of the residual stress gradient in $p^+$,/TEX> silicon. When the electrostatic forec is applied to the $p^+$,/TEX> cantilevers, the vertical displacement of the plate can be achieved. The deflection of the cantilever due to the residual stress gradient and the vertical displacement by electrostatic force were calculated. The displacement of the plate was measured with a laser displacement meter for various input voltages and frequencies. The feasibility of the proposed micro actuator for the applications to optical pickup devices or optical communication devices was confirmed by the experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.2
• /
• pp.91-95
• /
• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.129.2-129.2
• /
• 2011

본 연구에서는 a-Si:H/c-si 구조의 이종접합 태양전지의 p a-Si:H 에미터 층의 박막 조건에 따라 태양전지 특성을 연구하였다. p, n-layer는 PECVD (Plasma-enhanced chemical vapor deposition) i-layer는 HWCVD(Hot wire chemical vapor deposition), ITO는 RF 마그네트론 스퍼터링법으로 제작하였다. p-layer의 도핑 농도, 기판 증착 온도, 증착 높낮이에 따라 특성을 비교 분석 하였다. QSSPC로 minority carrier life time, 자외 가시선 분광분석 장치로 투과 반사도를, Ellipsometer로 흡수 계수, 두께, FTIR로 막의 구성요소 등의 변화를 조사하여 개선된 p a-Si:H의 특성이 이종접합 태양전지에서 효율향상에 영향을 주는지 Photo IV와 EQE를 통하여 조사하였다.

• Tribology and Lubricants
• /
• v.19 no.5
• /
• pp.274-279
• /
• 2003

$Al-SiC_{p}$ composite layer was prepared by plasma thermal spray on aluminum substrate. The homogeneously dispersed composite powder for thermal spray was fabricated by mechanical alloying with ball mill. The friction tests of the composite layers and commercial aluminum alloys for comparison were performed in the temperature range of 20∼$260^{\circ}C$ with the interval of $40^{\circ}C$ with steel counter-face. Friction coefficient was recorded during test sequence, and the microstructure of surface and debris was investigated by optical and scanning electron microscope. Friction coefficients of composite and aluminum alloys at room temperature were similar except pure aluminum. As the temperature increase, friction coefficient was increased rapidly in AC4C, AC2A. But friction coefficient of $Al-SiC_{p}$ composite was not increased so much up to $220^{\circ}C$. Consequently, the reinforcement of $SiC_{p}$ into aluminum matrix increased the stability of friction coefficient as well as wear resistance.

• Journal of Korea Foundry Society
• /
• v.17 no.4
• /
• pp.385-392
• /
• 1997

The main objective of this study is to investigate the microstructure and tensile strength of $SiC_p$/Al alloy composites fabricated by die casting method. Die casting was performed using the preheated mold at the pouring temperature range of $620{\sim}750^{\circ}C$ under the pressure of $1,039 kgf/cm^2$. The low speed and a following high injection speed were 0.4 and 2.1 m/s, respectively. The microstructure of $SiC_p$/Al alloy composites fabricated by die casting method was found to be finer than that of composites fabricated by gravity casting. Also, SiC particulates were homogeneously distributed in refined Al matrix due to rapid solidification. The tensile strength of $SiC_p$/Al alloy composites fabricated by die casting method was found to be varied with cast temperature. The maximun tensile strength of $SiC_p$(10 vol.% and 20 vol.%)/Al alloy composites showed 380 MPa at the cast temperature of $750^{\circ}C$ and 363 MPa at the cast temperature of $700^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
• /
• v.29 no.6
• /
• pp.431-440
• /
• 1992

• BMB Reports
• /
• v.47 no.4
• /
• pp.203-208
• /
• 2014

To gain insights into the effect of MexB gene under the short interfering RNA (siRNA), we synthesized 21 bp siRNA duplexes against the MexB gene. RT-PCR was performed to determine whether the siRNA inhibited the expression of MexB mRNA. Changes in antibiotic susceptibility in response to siRNA were measured by the E-test method. The efficacy of siRNAs was determined in a murine model of chronic P. aeruginosa lung infection. MexB-siRNAs inhibited both mRNA expression and the activity of P. aeruginosa in vitro. In vivo, siRNA was effective in reducing the bacterial load in the model of chronic lung infection and the P. aeruginosa-induced pathological changes. MexB-siRNA treatment enhanced the production of inflammatory cytokines in the early infection stage (P < 0.05). Our results suggest that targeting of MexB with siRNA appears to be a novel strategy for treating P. aeruginosa infections.

• Journal of Korea Foundry Society
• /
• v.17 no.2
• /
• pp.170-179
• /
• 1997

A noble technique has been developed for fabricating in situ formed $TiC_p/Al$ composites. In this process, fairly stable TiC particles were in situ synthesized in liquid aluminum by the interfacial reaction between an Al-Ti melt and SiC, which is a comparatively unstable carbide from the view-point of thermodynamics. It is possible in the present process to generate TiC particles of nearly 1 ${\mu}m$ in diameter, even utilizing SiC of 14 ${\mu}m$ as raw material. However, the dispersion behavior of TiC particles in the matrix depends on the size of the raw material SiC. Decomposing finer SiC makes the dispersion of TiC particles more uniform and the mechanical properties of composites are improved accordingly. The structure of in situ composites and their mechanical properties are affected by the fabrication temperature and the stirring time. It has been found that the most suitable condition for fabrication should be applied depending on the size of the raw material, even if the same kinds of carbide are used. Furthermore, although Al-Ti-Si system intermetallic compounds are detected in a $TiC_p/Al-Si$ composite which is fabricated by conventional melt-stirrng method, these compounds can not be observed in a $TiC_p/Al-Si$ composite made by this in situ production method. Hence the mechanical properties of the in situ $TiC_p/Al-Si$ composite are superior to those of the conventional $TiC_p/Al-Si$ composites.

• Journal of IKEEE
• /
• v.22 no.4
• /
• pp.916-921
• /
• 2018

In this paper, we analyzed the power MOSFET devices for high voltage and high current operation. 4H-SiC was used instead of Si to improve the static characteristics of the device. Since 4H-SiC has a high critical electric field due to wide band gap, 4H-SiC is more advantageous than Si in high voltage and high current operation. In the conventional VDMOSFET structure using 4H-SiC, the breakdown voltage is limited due to the electric field crowding at the edge of the p-base region. Therefore, in this paper, we propose a Curvature VDMOSFET structure that improves the breakdown voltage and the static characteristics by reducing the electric field crowding by giving curvature to the edge of the p-base region. The static characteristics of conventional VDMOSFET and curvature VDMOSFET are compared and analyzed through TCAD simulation. The Curvature VDMOSFET has a breakdown voltage of 68.6% higher than that of the conventional structure without increasing on-resistance.

• Journal of the Korean Society for Heat Treatment
• /
• v.27 no.1
• /
• pp.1-9
• /
• 2014

For connector material applications, the influence alloying elements of Mn, Cr, Fe, and Ti and cold rolling reduction on the mechanical property, electrical conductivity and bendiability of Cu-Ni-Si-P alloy was investigated. The hot rolled plates were solution treated at $980^{\circ}C$ for 1.5 h, quenched into water, cold rolled by 10% and 30% reduction in thickness, and then aged at $440{\sim}500^{\circ}C$ for 3, 4, 5 times. respectively. Cu-Ni-Si-P-x alloys cold rolled by 10 reduction before heat treatment have a good bendability compare to cold rolled by 30 reduction. Cu-3.4Ni-0.8Si-0.03P-0.1Ti shows the peak strength value of 759 MPa, an electrical conductivity of 39%IACS, an elongation of 10% and a hardness of 256 Hv aged at $440^{\circ}C$ for 6 hrs. Thus it is suitable for lead frame and connector.