• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1459-1466
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• 1994

A novel technique for determining the oxygen tracer diffusion coefficients in oxides was developed. After the 16O-18O solid-gas exchange reactions between 16O in the oxides and 18O in the ambient gas, Raman spectra of the cross sections of oxide samples were measured in a spatial resolution of 5 ${\mu}{\textrm}{m}$. From thus obtained Raman spectra, depth profiles of 18O concentration in the oxide samples were calculated. The oxygen tracer diffusion coefficients and the surface exchange coefficients were determined under the assumptions that samples are semi-infinite slab and that the surface exchange reactionsare not negligible. The oxygen tracer diffusion coefficient of 2.8 mol% Y2O3-containing tetragonal ZrO2 polycrystals, 8 mol% Y2O3-containing ZrO2 polycrystals, and 10 mol% Y2O3-containing cubic ZrO2 single crystals (along the a axis) are as follows.

• Bulletin of the Korean Chemical Society
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• v.18 no.11
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• pp.1175-1179
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• 1997

The adsorption of oxygen on ZnO was monitored by measuring the capacitance of two contacting crystals which have depletion layers originated from the interaction between oxygen and ZnO at 298 K-473 K. An admission of oxygen to the sample induced an irreversible increase in the depth and the amount of adsorbed oxygen was less than 0.001 monolayer in the experimental condition. The relation between pressure of oxygen and variation of the depth was tested from the view point of Langmuir or Freundlich isotherm. Using Hall effect measurement and kinetic experiment, a model equation on the adsorption process was proposed. From the results, it was suggested that oxygen adsorption depended on the rate of electron transfer from ZnO to oxygen while the amount of adsorbed oxygen was kinetically restricted by the height of surface potential barrier.

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.149-151
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• 1997

Barrier height on the surface was monitored at 77 K by observing the inflection of V-I characteristics of ZnO(1010)-ZnO(1010) contact in the surface reaction of oxygen species with carbon monoxide. The contact showed inflections at 10-20 mV and 10-50 mV for the sample adsorbed oxygen at 298 K and 573 K, respectively. When the sample adsorbed oxygen at 573 K was exposed to carbon monoxide at 298 K and 573 K, inflections were observed at 10-40 mV and 10-30 mV, respectively. The results indicated that the adsorption of oxygen on ZnO increased the surface barrier height, and the reaction of carbon monoxide with the oxygen-preadsorbed (at 573 K) ZnO decreased the surface barrier height.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.21-24
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• 2017

Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type $SnO_2$. Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide ($SnO_2$) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at $150^{\circ}C$, ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150. This is the middle level in compared with those of ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The electrical properties of ZTO followed those of $SnO_2$, which acts a an enhancer in the oxide semiconductor.

• Journal of the Korean Chemical Society
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• v.59 no.1
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• pp.18-21
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• 2015

We use a scanning tunneling microscope based break-junction technique to measure the conductance of a 4,4'-dimethoxybiphenyl molecular junction formed with Ag and Au electrodes. We observe the formation of a clear molecular junction with Ag electrodes that result from stable Ag-oxygen bonding structures. However we have no molecular bonding formation when using Au electrodes, resulting in a tunneling current between the top and bottom metal electrodes. We also see a clear peak in the conductance histogram of the Ag-oxygen molecular junctions, but no significant molecular features are seen with Au electrodes. Our work should open a new path to the conductance measurements of single-molecule junctions with oxygen linkers.

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.640-643
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• 1997

Pure titanium dioxide $(TiO_2)$ films were prepared by pulsed laser deposition on a single crystal Si(100) substrate. We have investigated the growth of crystalline titanium dioxide films with respect to substrate temperature and ambient oxygen pressure. The structural properties of the films were analyzed by X-ray diffraction. We found that the anatase as well as the rutile phases could be formed from the original rutile phase of the target $TiO_2$. At 0.75 torr of ambient oxygen pressure, the structure of $TiO_2$ film was amorphous at room temperature, anatase between 300 and 600 ℃, a mixture of anatase and rutile between 700 and 800 ℃, and only rutile at 900 ℃ and above. However, at a low ambient oxygen pressure, the rutile phase became dominant; the only rutile phase was obtained at the ambient oxygen pressure of 0.01 torr and the substrate temperature of 800 ℃. Therefore, the film structures were largely influenced by substrate temperature and ambient oxygen pressure.

• 수도
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• s.5
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• pp.18-25
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• 1975

• Korean Journal of Materials Research
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• v.21 no.11
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• pp.617-622
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• 2011

The effect of oxygen on the shape memory characteristics in Ti-18Nb-6Zr-XO (X = 0-1.5 at%) biomedical alloys was investigated by tensile tests. The alloys were fabricated by an arc melting method at Ar atmosphere. The ingots were cold-rolled to 0.45 mm with a reduction up to 95% in thickness. After severe cold-rolling, the plate was solution-treated at 1173 K for 1.8 ks. The fracture stress of the solution-treated specimens increased from 450 Mpa to 880 MPa with an increasing oxygen content up to 1.5%. The fracture stress increased by 287MPa with 1 at% increase of oxygen content. The critical stress for slip increased from 430 MPa to 695 MPa with an increasing oxygen content up to 1.5 at%. The maximum recovery strain of 4.1% was obtained in the Ti-18Nb-6Zr-0.5O (at%) alloy. The martensitic transformation temperature decreased by 140 K with a 1.0 at% increase in O content, which is lower than that of Ti-22Nb-(0-2.0)O (at%) by 20 K. This may have been caused by the effect of the addition of Zr. This study confirmed that addition of oxygen to the Ti-Nb-Zr alloy increases the critical stress for slip due to solid solution hardening without being detrimental to the maximum recovery strain.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.909-916
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• 2005

The structural and electrical property of RF magnetron sputtered ZnO thin film have been studied as a function of RF power, substrate temperature, oxygen/argon gas ratio and film thickness at constant sputtering power, sputtering working pressure and target-substrate distance. To analyze a crystallo-graphic properties of the films, $\theta$/2$\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity and surface roughness highly depended on oxygen/argon gas ratio. The resistivity of ZnO thin film(6000 ${\AA}$) rapidly increased with increasing oxygen ratio and the resistivity value of $9 {\ast} 10^7 {\Omega}cm$ was obtained at a working pressure of 10 mTorr with the same oxygen/argon gas ratio. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with the same oxygen/argon gas ratio showed the excellent roughness value of 28.7 ${\AA}$. With increase of the substrate temperature, The C-axis preferred orientation of ZnO thin film increases and the resistivity decreases due to deviation from the stoichiometric ZnO due to oxygen deficiency.

• Journal of the Korean Society of Tobacco Science
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• v.18 no.1
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• pp.49-53
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• 1996

This experiment was carried out to study the effect of oxygen on chemical composition and physical properties of tobacco leaves during flue-curing. The results obtained were as follows: Starch content decreased and sucrose content increased with increasing oxygen supply during curing. Glucose and fructose of the cured leaves showed high content at the 5-10% oxygen supply. Amino-N and nitrate-N increased with increasing oxygen supply. Total nitrogen and NH4-N showed the lowest value at the 5-10% and 10-15% oxygen supply in the cutters and leaf, respectively. Chlorophyll and chlorogenic acid increased, and total volatile base decreased with increasing oxygen supply. The activity of α-amylase increased at the latter period of flue-curing, and the maximum activity point were delayed 12 hours with increasing oxygen supply. Shatter index of cured leaves decreased with increasing oxygen supply. It was desirable to supply oxygen during flue-curing for the improvement of chemical and physical properties such as starch, total sugar, chlorogenic acid, and shatter index of cured leaves.