• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.242.1-242.1
• /
• 2013

최근, 저항변화 메모리 (resistance random access memory, ReRAM)는 단순한 구조, 고집적성, 낮은 소비 전력, 우수한 retention 특성 CMOS 기술과의 공정호환성 등의 장점으로 인하여 현재 사용되는 메모리의 물리적 한계를 극복할 수 있는 차세대 메모리로써 주목을 받고 있다. 더욱이 용액공정은 높은 균일성, 공정 시간 및 비율 감소 그리고 대면적화가 가능한 장점을 가진 이유로 TiOx, ZrOx ZnO 같은 high-k 물질들을 이용한 연구가 보고되고 있다. 기존의 ReRAM 용액공정에서 결함, 즉 oxygen vacancies 그리고 불순물들을 제어하기 위해 일반적으로 사용되는 furnace 열처리는 낮은 열효율과 고비용등의 문제점을 가지고 있다. 특히 glass 또는 flexble 기판의 경우 열처리 온도에 제약이 있다. 이러한 문제를 해결하기 위한 방법으로 열 균일성, 짧은 공정시간 의 장점을 가진 microwave 열처리 방법이 보고되고 있다. 따라서 본 연구에서는 용액공정을 이용하여 증착한 HfOx 기반의 저항변화 메모리를 제작하여 저온에서 microwave 열처리 와 furnace 열처리의 특성을 비교평가 하였다. 그 결과 microwave 열처리 방법이 furnace 열처리 방법보다 넓은 메모리 마진, 향상된 uniformity 를 가지는 것을 확인 하였다. 이로써 저온공정이 필요한 ReRAM 의 열처리 대안책 으로 사용될 수 있을 것으로 기대된다.

• Progress in Superconductivity and Cryogenics
• /
• v.23 no.1
• /
• pp.12-16
• /
• 2021

The magnetic properties of heat treated O-series high temperature superconducting (HTS) GdBCO coated conductor (CC) tapes which were formed of Ag/GdBCO/Buffer-layers/Stainless Steel (SS), were investigated by employing a Quantum Design PPMS-14. Using a modified Bean model, the critical current density J_c values have been estimated from the 𝚫m_irr(H) data, which are obtained by measuring the magnetic moment m(H) loops. For a range of intermediate fields, which are interacting or collective flux pinning area, the magnetic flux behaviors were investigated from the relationship J_c ∝ H^-β. In addition, the changes of irreversibility magnetic field H_irr line of heat-treated O-series HTS GdBCO CC tapes were analyzed, according as the annealing temperature under oxygen flowing increases. Both weak and strong break-downs were found by examining the changes of irreversibility magnetic field H_irr lines.

• Korean Journal of Materials Research
• /
• v.31 no.2
• /
• pp.97-100
• /
• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Bulletin of the Korean Chemical Society
• /
• v.9 no.5
• /
• pp.289-291
• /
• 1988

The ratio of trivalent to divalent copper has been determined by the redox titration for two superconducting phases of $YBa_2Cu^{3+}_{2x}Cu^{2+}_{3-2x}O_{6.5+x}$ with the onset temp. of 60K (x = 0.23 ${\pm}$ 0.01) and 90K (x = 0.35 ${\pm}$ 0.02), and for the insulating one (x ${\cong}$ 0) which was kept in an ambient atmosphere for 72 hrs. It is found that $T_c$, and the ratio of $Cu^{3+}/Cu^{2+}$ depend strongly on the annealing temperature and time. A typical orthorhombic phase can easily be obtained by a slow cooling or stepwise cooling at $PO_2$ = 1 atm, and shows a high Tc (ca. 90K) superconductivity.

• Journal of the Korean institute of surface engineering
• /
• v.55 no.4
• /
• pp.215-221
• /
• 2022

In the present work, copper oxide thin films were formed by heat-treatment method with different temperatures and atmosphere, e.g., at 200 ~ 400 ℃; in air and Ar atmosphere. The morphological, electrical and optical properties of the thermally fabricated Cu oxide films were analyzed by SEM, XRD, and UV-VIS spectrometer. Thereafter, photoelectrochemical properties of the thermal copper oxide films were analyzed under solar light (AM 1.5, 100 mW/cm²). Conclusively, the highest photocurrent was obtained with Cu₂O formed under the optimum annealing condition at 300 ℃ in air atmosphere. In addition, EIS results of Cu oxide formed in air atmosphere showed relatively low resistance and long electron life-time compared with Cu Oxide fabricated in Ar atmosphere at the same temperature. This is because heat-treatment in Ar atmosphere could not form Cu₂O due to lack of oxygen, and thermally formed CuO at high temperature suppressed stability and conductivity of the Cu oxide.

• Progress in Superconductivity and Cryogenics
• /
• v.8 no.1
• /
• pp.15-18
• /
• 2006

A new precursor solution wilt low fluorine content was synthesized for MOD processing of coated conductors. In this study, the precursor solution for MOD processing was synthesized using F-free yttrium and copper precursor. It was shown that crack-free and uniform precursor films were formed after calcination in humidified oxygen atmosphere. Less than 2 hours were required to finish the calcination process. The relatively gradual weight loss during the calcination process is attributed to the feasibility of fast calcination profile. The calcined precursor film was converted to a YBCO film without any secondary phases after annealing in wet $Ar/O_2$ atmosphere. Fully converted film shows uniform microstructure and high critical current density. $(Jc=2.7MA/cm^2) $.

• Progress in Superconductivity and Cryogenics
• /
• v.9 no.1
• /
• pp.1-4
• /
• 2007

The total Fluorine content in the precursor solution for MOD processing of YBCO coated conductors can be significantly reduced by synthesizing precursor solution with F-free Y & Cu precursor and Barium trifluoroacetate(TFA). It was shown that crack-free and uniform precursor films were formed after calcinations in humidified oxygen atmosphere. Less than 2 hours are required to finish the calcinations process and XRD measurement shows that $BaF_2,\;CuO,\;Y_2O_3$ are major constituent of calcined precursor films. Film thickness after calcinations was improved to be 2.8um by applying slot-die coating method. In particular, addition of Samarium shows critical current of $I_c=273A/cm-w(J_c=3.8MA/cm^2)$. It is shown that uniform and fast processing route to YBCO coated conductor with high Ic can be provided by employing F-free Y & Cu precursor solution in MOD process.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.7
• /
• pp.7-14
• /
• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

• Journal of the Korean Vacuum Society
• /
• v.19 no.4
• /
• pp.293-299
• /
• 2010

Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.

• Journal of the Korean Magnetics Society
• /
• v.5 no.2
• /
• pp.128-133
• /
• 1995

Yttrium Iron Garnet($Y_{3}Fe_{5)O_{12}$) films have been succsssfully grown on(111)GGG wafer by KrF excimer laser ablation of stoichiometric garnet target at the oxygen partial pressure, $P(O_{2}$, ranging 20 to 500 mTorr. During the deposition of the films the substrate temperature was maintained at $700^{\circ}C$ and the laser beam energy density at $7.75\;J/cm_{2}$. Microstructure, composition and magnetic properties of the films obtained were investigated as a function of oxygen pressure and thickness of the films. Epitaxial films with a dense and a smooth surface were reproducible at a low oxygen pressure. The films of $2.75\;{\mu}$ min thickness deposited at 20 mTorr of $P(O_{2})$ showed $4{\pi}M_{s}$ of 1500 Gauss and $H_{c}$ of 3 Oe after annealing at $800\;^{\circ}C$ for 20 minutes. As-deposited films of $0.8\;\mu\textrm{m}$ in thickness exhibited the $4{\pi}M_{s}$ of 1730 Gauss and $H_{c}$ of 7 Oe. The magnetic properties of the films obtained were almost identical to those of a single crystal YIG.