• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.88-91
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• 2003

Si nanocrystallites thin films have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperature range of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas ($95%N_{2}+5%H_{2}$) at $500^{\circ}C$. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. As a result of photoluminescence spectra and infrared absorption spectra, we conclude that the violet-indigo PL efficiency is related with oxygen vacancy in the $SiO_x$(x= 1.6-1.8) matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.268-272
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• 2007

A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.

• Journal of Powder Materials
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• v.7 no.2
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• pp.63-70
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• 2000

Thermal spray coating process has proven to be effective at producing hard, dense, wear resistance coatings on the relatively mild substrates. Among several spraying techniques, HVOF (High Velocity Oxygen Fuel) and plasma coating processes, which are preferentially used for the wear resistance application such as capstans, have been applied in this study. The effects of pre-treatment, it-process and post-treatment parameters on the wear and mechanical properties of WC+12%Co, Cr3C2 and Al2O3 powder coatings have been investigated and correlated with the microstructures. The results indicated that the carbide coating was more preferable to the oxide coatings and the post-treatments consisting of vacuum annealing and sealing on carbide coatings led to significant improvements in wear resistance, adhesive strength and coating phase stabilization over the other processing techniques in this application.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.213-217
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• 1997

In this paper, the imparct of X-ray and plasma process-induced-damages to La doped Lead Zirconate Titanate (PLZT, (Pb1-xLa)(Zr0.5Ti0.5)O3) capacitor characteristics have been investigated from the viewpoint of gigabit scale dynamic random access memory (DRAM) applications. Plamsa damage causes asymmetric degradation on hysteresis characteristics of PLZT films. On the other hand, X-ray damage results in a symmetrical reduction of charge storage densities (Qc's) for both polarities. As La concentration increases in the films, the radiation hardness of PLZT films on X-ray and plasma exposures is improved. It is observed that the damaged devices are fully recovered by thermal annealing under oxygen ambient.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.151-156
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• 2000

Yb/YAG single crystals were grown from the melt composition of Y/sub 1-x/Yb/sub x/)₃Al/sub 5/O/sub 12/ where x equal to 5, 10, 15, 20, 25, 33, 50, 75 and 100 at % by floating zone method. Optimum growth parameters to get high quality single crystals were 3.5 mm/h of growth rate and 20 rpm of rotation rate under the N₂ atmosphere. After the growth, color of crystals was appeared with pale blue due to the lack of oxygen, but it was disappeared after annealing at 1450℃ for 2 hr. Absorption coefficients were linearly increased depending on the concentration of Yb/sup 3+/ ions. Broad emission band was measured in the range of 1020 to 1050 nm with the peak intensity at 1031 nm and 1051 nm because of ²F/sub 5/2/(1)→²F/sub 7/2/(3) and ²F/sub 5/2/(1)→²F/sub 7/2/(4) transition respectively. When Yb/sup 3+/ ions were substituted with high rates, there were tendency to decrease the measured fluorescent lifetime for Yb ions depending on the concentration of Yb/sup 3+/ ions.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.17-17
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• 2002

Time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of the epitaxially grown BaTiO₃ layers on the MgO(100) surface. Hetero-epitaxial BaTiO₃ layers can be deposited by the following steps: first thermal evaporation of titanium onto the MgO(100) surface in the atmosphere of oxygen at 400℃, secondly thermal evaporation of barium in the same manner, and finally annealing at 800℃. Well ordered perovskite BaTiO₃ was confirmed from the ICISS spectra and reflection high electron energy diffraction (RHEED) patterns. It was also revealed that BaTiO₃ had cubic structure with the same lattice parameter of bulk phase.

• Journal of the Korean Ceramic Society
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• v.48 no.3
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• pp.251-256
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• 2011

The luminescence properties of polycrystalline ZnO annealed in reducing ambience ($H_2/N_2$) have been studied. An effective quenching of green luminescence with enhanced UV emission from polycrystalline ZnO is observed for the reduced ZnO. The variations of the UV and green luminescence band upon reduction treatment are investigated as a function of temperature in the range between 20 and 300 K. Upon annealing treatment in reducing ambience, the optical quality of polycrystalline ZnO is improved. The UV to green intensity ratio of sintered ZnO approaches close to zero (~0.05). However, this ratio reaches more than 13 at room temperature for polycrystalline ZnO annealed at $800^{\circ}C$ in reducing ambience. Furthermore, the full width at half maximum (FWHM) of the UV band of polycrystalline ZnO is reduced compared to unannealed polycrystalline ZnO. Electron paramagnetic resonance (EPR) measurements clearly show that there is no direct correlation between the green luminescence and oxygen vacancy concentration for reduced polycrystalline ZnO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.36-40
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• 1988

High TC Y-Ba-Cu-O Superconductors were fabricated by sintering, sinter+HIP encapsulation. Specimens were sintered at 920$^{\circ}C$∼960$^{\circ}C$. A part of sintered specimens were treated by HIP, and HIP conditions were 150 MPa, 880$^{\circ}C$, 30min under the Ar atmosphere. The relative density of HIP specimens was increased 5∼8% in comparison with sintered one(90∼93% relative density). X-ray analysis represented the orthorhobic-tetragonal phase transition with annealing condition. Tc measurements showed a sharp drp within 3$^{\circ}C$, 91K onset and 89K offset. Transport current density(Jc) of sintered specimens showed typically∼159A/㎤ but that of sinter+HIP encapsulation was decreased to∼89A/㎤ because of insufficient oxygen diffusion, Hardness(H) and Toughness(Kc) were increased to 38GPa; and 2.9 MPam$\^$$\frac{1}{2}$/, respectively.