• Applied Science and Convergence Technology
• /
• v.24 no.5
• /
• pp.178-183
• /
• 2015

Optical, electrical and structural properties of VOx/ZnO/VOx thin film are studied. The VOx/ZnO/VOx multilayer is deposited by using a radio frequency (RF) sputtering system. The VOx/ZnO/VOx thin film shows the high temperature coefficient of resistance (TCR) of $-3.12%/^{\circ}C$ and the low sheet resistance of about 80 $k{\Omega}/sq$ at room temperature. The responsivity and detectivity of the bolometer are measured as a function of modulation frequency.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.71-71
• /
• 2012

Chemically modified graphene has been great interest for the application of printed electronics using solution prossesable technique. Here, we demonstrate a large area graphene exfoliation method with fewer defects on the basal plane by application of shear stress in solution to obtain high quality reduced graphene oxide (RGO). Moreover, we introduce a novel route to preparing highly concentrated and conductive RGO in various solvents by monovalent cation-${\pi}$ interaction. Noncovalent binding forces can be induced between a monopole (cation) and a quadrupole (aromatic ${\pi}$ system). The stability of this RGO dispersion was more sensitive to the strength of the cation-${\pi}$ interactions than to the cation-oxygen functional group interactions. The RGO film prepared without a post-annealing process displayed superior electrical conductivity of 97,500 S/m. Our strategy can facilitate the development of large scalable production methods for preparing printed electronics made from high-quality RGO nanosheets.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.186-186
• /
• 2015

We have introduced multifunctional ITO single thin films formed by normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions. MFSS ITO also possesses high gas diffusion barrier properties simultaneously low resistivity even it deposited at room temperature without post annealing on plastic substrate. Nano-crystalline enhancement by Ar energy has energy window from 20 to 30 eV under blocking NOI condition. Effect of blocking NOI and optimal Ar energy window enhancement facilitate that resistivity is minimized to $3.61{\times}10^{-4}{\Omega}cm$ and the WVTR of 100 nm thick MFSS ITO is $3.9{\times}10^{-3}g/(m^2day)$ which is measured under environmental conditions of 90% relative humidity and 50oC that corresponds to a value of ${\sim}10^{-5}g/(m^2day)$ at room temperature. The multifunctional MFSS ITO with low resistivity, and low gas permeability will be highly valuable for plastic electronics applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.276-276
• /
• 2013

Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) and Atomic Force Microscopy (AFM) are the useful instruments to measure nanostructures of material surfaces. Surface pattern formation in blending homopolymer and diblock copolymer films was investigated as a function of film thickness and annealing conditions. In this study, surface structures of blending homopolymer [deuterated polystyrene (Mn 20,000), poly (methyl methacrylate) (Mn 18,000)] and diblock copolymer [Poly (deuteratedstyrene(d8)-b-methyl methacrylate) (Mn 19,500-18,100)] films were observed. The AFM result indicated that the nanostructures and film thickness depended on temperature, concentration and solvent. TOF-SIMS depth profiling was obtained for the lamellar morphology of symmetric dPS-b-PMMA which is found to orient parallel to the surface of the substrate. Elemental and molecular depth profiles measured in the negative ion mode by a Cs+ primary ion beam demonstrate variations in hydrogen, deuterium, carbon, oxygen, hydrocarbons and deuterated hydrocarbons within the diblock copolymer according to the depth.

• Journal of the Korean Applied Science and Technology
• /
• v.17 no.2
• /
• pp.144-148
• /
• 2000

A modification of the sol-gel method to obtain phase pure superconducting oxides is described. The method starts from organic salts of yttrium, barium and copper, such as acetates, and avoids the sudden and uncontrollable decomposition of the organic fraction which occurs if nitrates are used as starting materials. The aqueous solution obtained with citric acid in an alkaline medium is concentrated under vacuum. The solid so prepared is decomposed at about $300^{\circ}C$ thus giving an oxide precursor containing well dispersed yttrium, barium and copper. Pyrolysis at 850 - $920^{\circ}C$ followed by oxygen annealing gives the superconducting orthorhombic 123 phase. The results of TGA/DTA of the precursor, as well as XRD, electrical and magnetic property measurements on the pyrolysis products are presented and discussed.

• Korean Journal of Materials Research
• /
• v.15 no.2
• /
• pp.139-142
• /
• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.10
• /
• pp.108-113
• /
• 1994

The characteristics of the oxidation prevention layers for the copper metallization were investigated. The thin films such as Cr, TiN and Al were used as the oxidation prevention layers for copper. Ultra thin aluminum films were found to prevent the oxidation of copper up to the highest oxidation annealing temperature among the barrier layers examined in this study. It was found that oxygen did not diffuse into copper through aluminum films because of the aluminum oxide layer formed on the aluminum surface and the ultra thin aluminum film could be a good oxidation barrier layer for the copper metallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.43-49
• /
• 2002

Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at 1380$^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15∼40 nm width and 10-70 $\mu\textrm{m}$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along [110] direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.8
• /
• pp.651-657
• /
• 2002

Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at $1380^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15~40nm width and 10~70 $\mu m$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along ［110］ direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures.

• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.995-998
• /
• 2003

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.