• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.87-87
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• 2011

Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Bulletin of the Korean Chemical Society
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• v.15 no.9
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• pp.713-718
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• 1994

Manganese-incorporated neodymium oxide systems with a variety of Mn mol% were prepared to investigate the effect of doping on the electrical properties of neodymium oxide. XRD, XPS, SEM, DSC, and TG techniques were used to analyze the specimens. The systems containing 2, 5, 8, and 10 mol% Mn were found to be solid solutions by X-ray diffraction analysis and the lattice parameters were obtained for the single-phase hexagonal structure by the Nelson-Riley method. The lattice parameters, a and c, decreased with increasing Mn mol%. Scanning electron photomicrographs of the specimens showed that the grain size decreased with increasing Mn mol%. The curves of log conductivity plotted as a function of 1/T in the temperature range from 500 to 1000$^{\circ}C$ at $PO_2$'s of $10^{-5}$ to $10^{-1}$ atm for the specimens were divided into high-and low-temperature regions with inflection points near 820-890$^{\circ}C$. The activation energies obtained from the slopes were 0.53-0.87 eV for low-temperature region and 1.40-1.91 eV for high-temperature region. The electrical conductivities increased with increasing Mn mol% and $PO_2$, indicating that all the specimens were p-type semiconductors. At $PO_2$'s below $10^{-3}$ atm, the electrical conductivity was affected by the chemisorption of oxygen molecule in the temperature range of 660 to 850$^{\circ}C$. It is suggested that electron holes generated by oxygen incorporation into the oxide are charge carriers for the electrical conduction in the high-temperature region and the system includes ionic conduction owing to the diffusion of oxygen atoms in the low-temperature region.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.7
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• pp.4925-4929
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• 2015

Dye-sensitized solar cell(DSSC) has aroused intense interest owing to its competitive price and stabilized properties than Si based solar cells. Recently, many studies have been reported on the DSSC, especially development of a transparent conductive oxide-less dye-sensitized solar cell(TCO-less DSSC). In this paper, a thick and porous Ti electrode for low cost DSSC developed its properties. To estimate the Ti electrode, the films are tested FESEM and J-V evaluation method. An increase in Ti thickness from 50 nm to 200 nm mainly affects the fill factor without noticeably changing the photocurrent density. It was confirmed that optimal DSSC efficiency was obtained at Ti 150 nm.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.446-450
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• 2012

The important factors in sensors are sensitivity, selectivity, and response time. Oxide semiconductors are high sensitivity, fast response and the advantage of miniaturization. Zn-doped $SnO_2$ materials have been synthesized in order to improve the selectivity of the sensor. ZnO/$SnO_2$ crystals were prepared by a simple hydrothermal process and ultrasound pretreated hydrothermal process. ZnO/$SnO_2$ urchins were fabricated in the precursor solution with [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 and rod structures were fabricated ratio of 1:1 and 1:3. Surface area ratio was increased by increasing the ratio of [$Sn^{4+}$]. The sensitivity of sensors were highest at the [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 in ethanol, acetaldehyde, toluene, and nitric oxide.

• Journal of Sensor Science and Technology
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• v.29 no.2
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• pp.112-117
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• 2020

Xylene is a hazardous volatile organic compound that should be precisely measured to monitor indoor air quality. However, the selective and sensitive detection of ppm-level xylene using oxide-semiconductor gas sensors remains a challenge. In this study, pure and Cr-doped Co₃O₄ nanoparticles (NPs) were prepared using flame spray pyrolysis, and their gas-sensing characteristics to 5-ppm xylene at 250 ℃ were investigated. The 4 at% Cr-doped Co₃O₄ NPs exhibited a high gas response to 5-ppm xylene (resistance ratio to gas and air = 39.1) and negligible cross-responses to other representative and ubiquitous indoor pollutants such as ethanol, benzene, formaldehyde, carbon monoxide, and ammonia. In this paper, the enhancement of the gas response and selectivity of Co₃O₄ NPs to xylene by Cr doping was discussed in relation to the catalytic promotion of the gas-sensing reaction. This sensor can be used to monitor indoor xylene.

• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.184-188
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• 2016

Highly ordered $SnO_2$ and NiO nanocolumns have been successfully achieved by glancing-angle deposition (GLAD) using an electron beam evaporator. Nanocolumnar $SnO_2$ and NiO sensors exhibited high performance owing to the porous nanostructural effect with the formation of a double Schottky junction and high surface-to-volume ratios. When all gas sensors were exposed to various gases such as $C_2H_5OH$, $C_6H_6$, and $CH_3COCH_3$, the response of the highly ordered $SnO_2$ nanocolumn were over 50 times higher than that of the $SnO_2$ thin film. This work will bring broad interest and create a strong impact in many different fields owing to its particularly simple and reliable fabrication process.

• Journal of Powder Materials
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• v.24 no.6
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• pp.483-488
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• 2017

Transition-metal oxide semiconductors have various band gaps. Therefore, many studies have been conducted in various application fields. Among these, methods for the adsorption of organic dyes and utilization of photocatalytic properties have been developed using various metal oxides. In this study, the adsorption and photocatalytic effects of $WO_3$ nanomaterials prepared by hydrothermal synthesis are investigated, with citric acid added in the hydrothermal process as a structure-directing agent. The nanostructures of $WO_3$ are studied using transmission electron microscopy and scanning electron microscopy images. The crystal structure is investigated using X-ray diffraction patterns, and the changes in the dye concentrations adsorbed on $WO_3$ nanorods are measured with a UV-visible absorption spectrophotometer based on Beer-Lambert's law. The methylene blue (MB) dye solution is subjected to acid or base conditions to monitor the change in the maximum adsorption amount in relation to the pH. The maximum adsorption capacity is observed at pH 3. In addition to the dye adsorption, UV irradiation is carried out to investigate the decomposition of the MB dye as a result of photocatalytic effects. Significant photocatalytic properties are observed and compared with the adsorption effects for dye removal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.563-567
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• 2006

Indium tin oxide (ITO) used as an electrode in organic light emitting diodes (OLEDs) and organic thin film transistors (OTFTs) was modified by a self-assembled monolayer (SAM). For device fabrication, surface of the ITO was modified by immersion in a solution including various phosphonic acid at room temperature in order to increase work function of an electrode. The work function of ITO with SAM was measured by Kelvin probe. Work function increase of 0.88 eV was observed in ITO with various SAM. Therefore, ohmic contact is achieved in an interface between ITO and organic semiconductors (pentacene). We analyzed the origin of work function increase of ITO with SAM by X-ray photoelectron spectroscopy. We confirmed that increase of oxygen bonding energy attributed to increase the work function of ITO. These results suggested that ITO with the SAM gives a high possibility for high performance of OLEDS and OTFTs.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.286-291
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• 2013

This paper presents to analyze patterns from single and complex malodors using gas sensor array based on metal oxide semiconductors. The aim of research is to identify and discriminate single malodors such as $NH_3$, $CH_3SH$ and $H_2S$ and their mixtures according to concentration levels. Measurement system for analyzing patterns from malodors is constructed by an array of metal oxide semiconductor sensors which are available commercially together with associate electronics. The patterns from sensory system are analyzed by Principal Component Analysis (PCA) which is simple statistical pattern recognition technique. Throughout the experimental trails, we confirmed the experimental procedure for measurement system such as sensors calibration time and gas flow rate, and discriminated malodors using pattern analysis technique.