• 제목/요약/키워드: over etch

검색결과 116건 처리시간 0.019초

주조체의 설계 변화에 따른 수지접착형 보철물의 접착강도에 관한 연구 (A STUDY ON THE BOND STRENGTH OF RESIN-RETAINED PROTHESIS WITH VARIOUS CAST RETAINER DESIGNS)

  • 주대원;장익태;김광남
    • 대한치과보철학회지
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    • 제30권4호
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    • pp.508-525
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    • 1992
  • The purpose of this study was to evaluate the effect of some resistance form designs on the bond strength of resin-retained prosthesis. Six sub-groups are designed in natural teeth group and resin teeth group . The framework designs in natural teeth group: 1) no groove preparation 2) groove at the center of distal surface 3) groove at the distobuccal line angle 4) 45 degree lateral load with no groove 5) 45 degree lateral load with center groove 6) splint two teeth with no groove. The framework designs in resin teeth group: 1) no groove preparation 2) groove at the center of distal surface 3) groove at the distobuccal line angle 4) metal covered the 1/2 of distal surface 5) metal covered the 1/2 of mesial surface 6) metal extended over the 114 of buccal surface. Specimens were treated electrolytic etching by Oxy-Etch and cemented with Panavia EX. Failure load was measured by Instron. Another 30 specimens were carried out fatigue tests by MTS 810 fatigue testing machine for 5000 cycles at different load level. The following results were obtained from this study. 1. The failure load was significantly increased by resistance forms. 2. The failure load was not increased by increase of total surface area bonded with teeth. The distal surface area played an important role in failure load. 3. In 45 degree lateral load group, the failure load was decreased significantly than that of in vertical load group. 4. Bond failure modes between static test and fatigue test exhibited no differences.

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Effects of solvent volatilization time on the bond strength of etch-and-rinse adhesive to dentin using conventional or deproteinization bonding techniques

  • de Sousa, Jose Aginaldo Junior;Carregosa Santana, Marcia Luciana;de Figueiredo, Fabricio Eneas Diniz;Faria-e-Silva, Andre Luis
    • Restorative Dentistry and Endodontics
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    • 제40권3호
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    • pp.202-208
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    • 2015
  • Objectives: This study determined the effect of the air-stream application time and the bonding technique on the dentin bond strength of adhesives with different solvents. Furthermore, the content and volatilization rate of the solvents contained in the adhesives were also evaluated. Materials and Methods:Three adhesive systems with different solvents (Stae, SDI, acetone; XP Bond, Dentsply De Trey, butanol; Ambar, FGM, ethanol) were evaluated. The concentrations and evaporation rates of each adhesive were measured using an analytical balance. After acid-etching and rinsing, medium occlusal dentin surfaces of human molars were kept moist (conventional) or were treated with 10% sodium hypochlorite for deproteinization. After applying adhesives over the dentin, slight air-stream was applied for 10, 30 or 60 sec. Composite cylinders were built up and submitted to shear testing. The data were submitted to ANOVA and Tukey's test (${\alpha}=0.05$). Results: Stae showed the highest solvent content and Ambar the lowest. Acetone presented the highest evaporation rate, followed by butanol. Shear bond strengths were significantly affected only by the factors of 'adhesive' and 'bonding technique' (p < 0.05), while the factor 'duration of air-stream' was not significant. Deproteinization of dentin increased the bond strength (p < 0.05). Stae showed the lowest bond strength values (p < 0.05), while no significant difference was observed between XP Bond and Ambar. Conclusions: Despite the differences in content and evaporation rate of the solvents, the duration of air-stream application did not affect the bond strength to dentin irrespective of the bonding technique.

할로겐 플라즈마에 의한 Ge2Sb2Te5 식각 데미지 연구 (Investigation of Ge2Sb2Te5 Etching Damage by Halogen Plasmas)

  • 장윤창;유찬영;유상원;권지원;김곤호
    • 반도체디스플레이기술학회지
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    • 제18권4호
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    • pp.35-39
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    • 2019
  • Effect of Ge2Sb2Te5 (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

마이크로 열소자 제작을 위한 고세장비 금속채널의 레이저 가공 (Laser micromachining of high-aspect-ratio metallic channels for the application to microthermal devices)

  • 오광환;이민규;정성호
    • 한국광학회지
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    • 제17권5호
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    • pp.437-446
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    • 2006
  • 본 연구에서는 레이저유도 에칭기술을 이용한 스테인레스강의 고세장비 미세채널 제조에 대하여 기술한다. 공정 변수 최적화와 반복에칭을 통하여 높은 세장비를 갖는 미세채널을 제조하였으며 제조된 미세채널은 레이저출력과 에칭용액의 농도를 적절하게 조절함으로써 U 형상과 V 형상 사이의 단면 구조를 가지며 열변형이 없는 우수한 표면 형상을 보였다. 채널과 채널 사이의 간격은 $150{\mu}m$ 또는 그 이하이며 $15{\sim}50{\mu}m$ 범위의 폭을 갖는 10 이상의 고세장비 미세채널이 제조되었다. 레이저출력, 레이저초점의 이송속도, 에칭용액의 농도 등의 공정 변수들이 제조된 채널의 폭, 깊이 그리고 단면 형상에 미치는 영향에 대하여 자세히 보고한다.

Effect of dentin roughening and type of composite material on the restoration of non-carious cervical lesions: an in vivo study with 18 months of follow-up

  • Sanjana Verma;Rakesh Singla;Gurdeep Singh Gill;Namita Jain
    • Restorative Dentistry and Endodontics
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    • 제48권4호
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    • pp.35.1-35.14
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    • 2023
  • Objectives: The purpose of this study was to evaluate the impact of dentin roughening and the type of composite resin used (either bulk-fill flowable or nanohybrid) on the restoration of non-carious cervical lesions (NCCLs) with an 18-month follow-up period. Materials and Methods: This prospective split-mouth study included 36 patients, each with a minimum of 4 NCCLs. For each patient, 4 types of restorations were performed: unroughened dentin with nanohybrid composite, unroughened dentin with bulk-fill flowable composite, roughened dentin with nanohybrid composite, and roughened dentin with bulk-fill flowable composite. A universal bonding agent (Tetric N Bond Universal) was applied in self-etch mode for all groups. The restorations were subsequently evaluated at 6, 12, and 18 months in accordance with the criteria set by the FDI World Dental Federation. Inferential statistics were computed using the Friedman test, with the level of statistical significance established at 0.05. Results: The 4 groups exhibited no significant differences in relation to fracture and retention, marginal staining, marginal adaptation, postoperative hypersensitivity, or the recurrence of caries at any follow-up point. Conclusions: Within the limitations of the present study, over an 18-month follow-up period, no significant difference was present in the clinical performance of bulk-fill flowable and nanohybrid composite restorations of non-carious cervical lesions. This held true regardless of whether dentin roughening was performed.

SiH2Cl2 와 O3을 이용한 원자층 증착법에 의해 제조된 실리콘 산화막의 특성 (Characteristics of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using Alternating Exposures of SiH2Cl2 and O3)

  • 이원준;이주현;한창희;김운중;이연승;나사균
    • 한국재료학회지
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    • 제14권2호
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    • pp.90-93
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    • 2004
  • Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.