• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.124-127
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• 2016

Humidity calibration for a temperature-stable quartz oscillator (TSQO) was investigated to exclude the influences of relative humidity on the TSQO output in order to use the corresponding devices outdoors. The TSQO output is a voltage that is inversely proportional to the electric impedance of the quartz oscillator, which depends on the viscosity and density of the measured gas. The TSQO output was humidity calibrated using its humidity dependence, which was obtained by varying the relative humidity (RH) from 0 to 100 RH% while other conditions were kept constant. The humidity dependencies of the TSQO output were fit by a linear function. Subtracting the change in the TSQO output induced by the change in humidity, calculated with the function from the experimentally measured TSQO output for a range of 0-100RH%, eliminated the influence of humidity on the TSQO output. The humidity calibration succeeded in reducing the fluctuations of the TSQO output from 0.4-3% to 0.1-0.3% of the average values for a range of 0-100RH%, at constant temperatures. The necessary stability of the TSQO output for application in hydrogen sensors was below one-third of the change observed for a hydrogen leakage of 1 vol.% hydrogen concentration, corresponding to 0.33% of the change in each background. Therefore, the results in this study indicate that the present humidity calibration effectively suppresses the influence of humidity, for the TSQO output for use as an outdoor hydrogen sensor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.423-429
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• 2013

A 6-Gb/s differential voltage mode driver is presented whose output impedance and pre-emphasis level can be controlled independently. The voltage mode driver consists of five binary-weighted slices each of which has four sub-drivers. The output impedance is controlled by the number of enabled slices while the pre-emphasis level is determined by how many sub-drivers in the enabled slices are driven by post-cursor input. A prototype transmitter with a voltage-mode driver implemented in a 65-nm CMOS logic process consumes 34.8-mW from a 1.2-V power supply and its pre-emphasized output signal shows 165-mVpp,diff and 0.56-UI eye opening at the end of a cable with 10-dB loss at 3-GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.14-21
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• 2009

A digital differential transmitter based on CMOS inverter worked up to 2.8 Gbps at the supply voltage of 1 V with a $0.18{\mu}m$ CMOS process. By calibrating the output impedance of the transmitter, the impedance matching between the transmitter output and the transmission line is achieved. The PVT variations of pre-driver are compensated by the calibration of the rising-edge delay and falling-edge delay of the pre-driver outputs. The chip fabricated with a $0.18{\mu}m$ CMOS process, which uses the standard supply voltage of 1.8 V, gives the highest data rate of 4Gbps at the supply voltage of 1.2 V. The proposed calibration schemes improve the eye opening with the voltage margin by 200% and the timing margin by 30%, at 2.8 Gbps and 1 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.110-116
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• 2016

This paper describes 1.2-V 5-Gb/s scalable low voltage signaling(SLVS) differential transmitter(TX) with a digital impedance calibration and equalizer. The proposed transmitter consists of a phase-locked loop(PLL) with 4-phase output clock, a 4-to-1 serializer, a regulator, an output driver, and an equalizer driver for improvement of the signal integrity. A pseudo random bit sequence generator is implemented for a built-in self-test. The proposed SLVS transmitter provides the output differential swing level from 80mV to 500mV. The proposed SLVS transmitter is implemented by using a 65-nm CMOS with a 1.2-V supply. The measured peak-to-peak time jitter of the implemented SLVS TX is about 46.67 ps at the data rate of 5Gb/s. Its power consumption is 1.88 mW/Gb/s.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.126-142
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• 2016

This paper presents a wide-frequency-range, low-power transceiver with an automatic impedance-matching calibration for TV-white-space (TVWS) application. The wide-range automatic impedance matching calibration (AIMC) is proposed for the Drive Amplifier (DA) and LNA. The optimal $S_{22}$ and $S_{11}$ matching capacitances are selected in the DA and LNA, respectively. Also, the Single Pole Double Throw (SPDT) switch is integrated to share the antenna and matching network between the transmitter and receiver, thereby minimizing the systemic cost. An N-path filter is proposed to reject the large interferers in the TVWS frequency band. The current-driven mixer with a 25% duty LO generator is designed to achieve the high-gain and low-noise figures; also, the frequency synthesizer is designed to generate the wide-range LO signals, and it is used to implement the FSK modulation with a programmable loop bandwidth for multi-rate communication. The TVWS transceiver is implemented in $0.13{\mu}m$, 1-poly, 6-metal CMOS technology. The die area of the transceiver is $4mm{\times}3mm$. The power consumption levels of the transmitter and receiver are 64.35 mW and 39.8 mW, respectively, when the output-power level of the transmitter is +10 dBm at a supply voltage of 3.3 V. The phase noise of the PLL output at Band 2 is -128.3 dBc/Hz with a 1 MHz offset.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.5
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• pp.25-32
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• 2013

A 1.8V 2-Gb/s scalable low voltage signaling (SLVS) transmitter (TX) is designed for mobile applications requiring high speed and low power consumption. It consists of 4-lane TX for data transmission, 1-lane TX for a source synchronous clocking, and a 8-phase clock generator. The proposed SLVS TX has the scaling voltage swing from 50 mV to 650 mV and supports a high speed (HS) mode and a low power (LP) mode. An output impedance calibration scheme for the SVLS TX is proposed to improve the signal integrity. The proposed SLVS TX is implemented by using a 0.18-${\mu}m$ 1-poly 6-metal CMOS with a 1.8 V supply. The simulated data jitter of the implemented SLVS TX is about 8.04 ps at the data rate of 2-Gb/s. The area and power consumption of the 1-lane of the proposed SLVS TX are $422{\times}474{\mu}m^2$ and 5.35 mW/Gb/s, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.270-277
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• 2012

This paper presents a new DAC design strategy to achieve a wideband dynamic linearity by increasing the bandwidth of the output impedance. In order to reduce the dominant parasitic capacitance of the conventional matrix structure, all the cells associated with a unit current source and its control are stacked in a single column very closely (stacked unit cell structure). To further reduce the parasitic capacitance, the size of the unit current source is considerably reduced at the sacrifice of matching yield. The degraded matching of the current sources is compensated for by a self-calibration. A prototype 6-bit 3.3-GS/s current-steering full binary DAC was fabricated in a 1P9M 90 nm CMOS process. The DAC shows an SFDR of 36.4 dB at 3.3 GS/s Nyquist input signal. The active area of the DAC occupies only $0.0546mm^2$ (0.21 mm ${\times}$ 0.26 mm).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.6
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• pp.714-725
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• 2003

The theory of the current-type electromagnetic flowmeter for a high temporal resolution was developed for two-phase flow measurements. To predict the output of the current-type flowmeter, the three-dimensional virtual potential distribution C and the newly introduced flow pattern coefficient f were derived and computed. The output of flowmeter depends on the liquid conductivity (sensitive to temperature) and flow configurations of the two-phase flow with the sinusoidal excitation over 100 Hz. The flow pattern coefficient was specially devised to separate the dependency on the flow configuration of the two-phase flow from that on the liquid conductivity which can be expressed with the calibration of single-phase flow. Using the finite difference method, the three-dimensional virtual potential distributions were computed for the electrode of finite size. By taking derivative of the virtual potential, the weight functions were evaluated and compared with existing analytic series solution for the point-electrode. There was a reasonable correspondence between the present and existing results. In addition, the flow pattern coefficients were evaluated for annular flows with various film thicknesses, and compared with the experimental results by the impedance spectroscopy. The numerical results agreed well with the experimental data.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.357-360
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• 2013

A 1.8V 2-Gb/s scalable low voltage signaling (SLVS) transmitter (TX) is designed for mobile applications requiring high speed and low power consumption. It consists of 4-lane TX for data transmission, 1-lane TX for a source synchronous clocking, and a 8-phase clock generator. The proposed SLVS TX has the scaling voltage swing from 50 mV to 650 mV and supports a high speed (HS) mode and a low power (LP) mode. An output impedance calibration scheme for the SVLS TX is proposed to improve the signal integrity. The proposed SLVS TX is implemented by using a $0.18-{\mu}m$ 1-poly 6-metal CMOS with a 1.8V supply. The simulated data jitter of the implemented SLVS TX is about 8.04 ps at the data rate of 2-Gbps. The area and power consumption of the 1-lane of the proposed SLVS TX are $422{\times}474{\mu}m^2$ and 5.35 mW/Gb/s, respectively.