• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.777-779
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• 2002

We report the performance of pentacene-based organic thin film transistors (OTFT) with PMMA (polymethyl methacrylate) as the gate insulator which was spin-coated on the ITO (indium tin oxide) glass substrate which was used as the gate contact. The pentacene thin film was deposited on the PMMA film and then Au source/drain contacts were deposited through shadow mask. The pentacene film shows better molecular ordering on PMMA compared with $SiO_2$ of Si wafer. The devices exhibited the field effect mobility of ${\sim}0.004cm^2$/Vs and on/off current ratio of ${\sim}10^3$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1288-1290
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• 2005

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.119-122
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• 2008

In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.17.2-17.2
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• 2010

Printed electronics is an emerging technology to realize various microelectronic devices via a cost-effective method. Here we demonstrated a high performance of p-channel and n-channel top-gate/bottom contact polymer field-effect transistors (FETs), and applications to elementary organic complementary inverter and ring oscillator circuits by inkjet processing. We could obtained high field-effect mobility more than $0.4\;cm^2/Vs$ for both of p-channel and n-channel FETs, and successfully measured inkjet-printed polymer inverters. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. Optimized CMOS ring oscillators with p-type and n-type polymer transistors showed as high as 50 kHz operation frequency. This research was financially supported by development of next generation RFID technology for item level applications (2008-F052-01) funded by the ministry of knowledge economy (MKE).

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.441-445
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• 2007

In this paper we demonstrated the applications of OTFTs (organic thin film transistors) to flexible displays such as AM-EPD (active matrix electrophoretic display) and AM-OLED (active matrix organic light emitting diode), and also to integrated circuits. The OTFTs using pentacene semiconductor layer and PVP gate dielectric and Au S/D electrodes exhibited good performance for AM-EPD with the mobility of $0.59\;cm^{2}/V.sec,$ and with also good uniformity over 2.5" diagonal area. However, it is nor enough for AM-OLED requiring the mobility larger than $1\;cm^{2}/V.sec$ for large area displays. The integrated circuits also worked, producing the operating frequency of 1MHz. We need to develop a fabrication process to reduce parasitic capacitance for high frequency operation.

• Bulletin of the Korean Chemical Society
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• 제24권12호
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• pp.1862-1864
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• 2003

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.313-316
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• 1998

Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.

• International journal of advanced smart convergence
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• 제12권4호
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• pp.1-7
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• 2023

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.